公开(公告)号：US20240295037A1

公开(公告)日：2024-09-05

申请号：US18174036

申请日：2023-02-24

Applicant: City University of Hong Kong

Inventor： Ruiqin Zhang ,  Haipeng Wang

IPC: C25B11/053 ,  C25B1/04 ,  C25B9/50 ,  C25B11/077 ,  C25D3/54 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12

CPC classification number: C25B11/053 ,  C25B1/04 ,  C25B9/50 ,  C25B11/077 ,  C25D3/54 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12

Abstract: A photoelectrode includes a double-layer homojunction of metal oxide semiconductor films without heteroatoms incorporated. The metal oxide semiconductor films are uniform in large size with rich oxygen vacancies. For BiVO4 films, Bi precursor can be electrodeposited on a substrate under atmospheric pressure and air atmosphere. The electrolytes for electrodeposition are acidic or alkaline with controllable pHs. The electrodeposited substrate is transferred to the muffle furnace for thermal evaporation with V precursor. Film thickness and size can be controlled by electrodeposition parameters. The BiVO4 double-layer homojunction is a safer and cheaper material in photo-driven devices, hydrogen producers, and solar cells, and is an economical replacement of costly III-V compounds, polymers, and valuable fossil. The BiVO4 double-layer homojunction can also be employed as photoelectrodes for H2 production via photoelectrochemical (PEC) water splitting under solar light, which can provide pivotal reactor materials for hydrogen producers and solar cells.

公开(公告)号：US10090470B2

公开(公告)日：2018-10-02

申请号：US15049435

申请日：2016-02-22

Applicant: City University of Hong Kong

Inventor： Ruiqin Zhang ,  Juncao Bian

IPC: H01L51/40 ,  H01L51/00 ,  H01L29/12 ,  H01L51/44 ,  H01L51/52 ,  H01G9/20 ,  C01B21/06 ,  C23C14/12 ,  H01L51/42 ,  H01L51/50 ,  C23C14/24

Abstract: A method of forming a semiconductor film at pressure between 10−5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.

公开(公告)号：US12227856B2

公开(公告)日：2025-02-18

申请号：US18174036

申请日：2023-02-24

Applicant: City University of Hong Kong

Inventor： Ruiqin Zhang ,  Haipeng Wang

IPC: C23C28/00 ,  C23C28/02 ,  C25B1/04 ,  C25B9/50 ,  C25B11/053 ,  C25B11/077 ,  C25D3/54 ,  C25D5/10 ,  C25D5/50 ,  C25D5/54 ,  C25D7/12

Abstract: A photoelectrode includes a double-layer homojunction of metal oxide semiconductor films without heteroatoms incorporated. The metal oxide semiconductor films are uniform in large size with rich oxygen vacancies. For BiVO4 films, Bi precursor can be electrodeposited on a substrate under atmospheric pressure and air atmosphere. The electrolytes for electrodeposition are acidic or alkaline with controllable pHs. The electrodeposited substrate is transferred to the muffle furnace for thermal evaporation with V precursor. Film thickness and size can be controlled by electrodeposition parameters. The BiVO4 double-layer homojunction is a safer and cheaper material in photo-driven devices, hydrogen producers, and solar cells, and is an economical replacement of costly III-V compounds, polymers, and valuable fossil. The BiVO4 double-layer homojunction can also be employed as photoelectrodes for H2 production via photoelectrochemical (PEC) water splitting under solar light, which can provide pivotal reactor materials for hydrogen producers and solar cells.

公开(公告)号：US20230282424A1

公开(公告)日：2023-09-07

申请号：US18176786

申请日：2023-03-01

Applicant: City University of Hong Kong

Inventor： Ruiqin Zhang ,  Rafiqat Ui Rasool

IPC: H01G9/00 ,  H01G9/20

CPC classification number: H01G9/0029 ,  H01G9/2004

Abstract: A method for fabricating a film on a substrate and a method for controlling the heating rate of a plurality of nanoparticles to transform the plurality of nanoparticles into a plurality of nanorods and nano-cone structures includes the steps of providing a sol precursor, providing a substrate, depositing the sol precursor onto the substrate via a sol-gel technique, annealing the sol precursor under ambient pressure at a controlled heating rate, and cooling down the sol precursor to form a film.

公开(公告)号：US11261518B2

公开(公告)日：2022-03-01

申请号：US16128564

申请日：2018-09-12

Applicant: City University of Hong Kong

Inventor： Ruiqin Zhang ,  Wei Xiong ,  Miaoyan Huang ,  Haoran Tian

IPC: C23C14/22 ,  C23C14/06 ,  C03C17/22 ,  H01L21/02

Abstract: A method of producing a film of carbon nitride material, including the steps of providing a precursor of the carbon nitride material in a reacting vessel and a substrate substantially above the precursor of the carbon nitride material; heating the reacting vessel, the precursor of the carbon nitride material and the substrate at the first predetermined temperature; and quenching the reacting vessel to reach the second predetermined temperature; wherein the film of carbon nitride material is formed on a surface of the substrate during the quenching of the reacting vessel.

公开(公告)号：US20200080188A1

公开(公告)日：2020-03-12

申请号：US16128564

申请日：2018-09-12

Applicant: City University of Hong Kong

Inventor： Ruiqin Zhang ,  Wei Xiong ,  Miaoyan Huang ,  Haoran Tian

IPC: C23C14/22 ,  C23C14/06 ,  C03C17/22

Abstract: A method of producing a film of carbon nitride material, including the steps of providing a precursor of the carbon nitride material in a reacting vessel and a substrate substantially above the precursor of the carbon nitride material; heating the reacting vessel, the precursor of the carbon nitride material and the substrate at the first predetermined temperature; and quenching the reacting vessel to reach the second predetermined temperature; wherein the film of carbon nitride material is formed on a surface of the substrate during the quenching of the reacting vessel.