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公开(公告)号：US4797724A
公开(公告)日：1989-01-10
申请号：US393891
申请日：1982-06-30
IPC分类号： H01L21/74 , H01L27/092 , H01L29/08 , H01L29/10 , H01L29/32 , H01L29/34 , H01L27/04 , H01L29/78
CPC分类号： H01L29/0847 , H01L21/743 , H01L27/0921 , H01L29/1083 , H01L29/32 , H01L29/34
摘要： An IGFET is presented which includes a relatively low resistance path across the source-substrate junction to prevent parasitic bipolar effects while maintaining high component density in integrated circuits. The low resistance path across the source-substrate junction is formed by various methods including damaging the crystal structure at the junction interface, supplementing the damaged junction with a heavily doped region underlying the source region and spiking metallurgy. A particular application of the invention allows the prevention of latchup in CMOS devices. The invention also allows the source region of an IGFET to serve the dual functions of a source for a MOSFET as well as an ohmic contact to the underlying well or substrate.
摘要翻译： 提出了一种IGFET，其包括穿过源 - 衬底结的相对低的电阻路径，以防止寄生双极效应，同时在集成电路中保持高的组件密度。 通过各种方法形成源 - 衬底结的低电阻路径，包括损坏接合界面处的晶体结构，补偿受损结与源区下面的重掺杂区域和掺杂冶金。 本发明的特定应用允许防止CMOS器件中的闭锁。 本发明还允许IGFET的源极区域用于MOSFET的源极的双重功能以及与下面的阱或衬底的欧姆接触。
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公开(公告)号：US4618922A
公开(公告)日：1986-10-21
申请号：US321977
申请日：1981-11-16
CPC分类号： H02M5/293
摘要： A circuit arrangement is provided for a command source directing operation of a subsequent circuit. This command source circuit, based on using cross-coupled transistors, is electrically isolated from the subsequent circuit when no commands are being generated, and provides an output of constant polarity for input command signals of either constant or varying polarity.
摘要翻译： 提供了用于指示后续电路的操作的指令源的电路装置。 该命令源电路基于使用交叉耦合晶体管，当没有命令被产生时与后续电路电隔离，并为恒定或不同极性的输入命令信号提供恒定极性的输出。
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公开(公告)号：US4319182A
公开(公告)日：1982-03-09
申请号：US141512
申请日：1980-04-18
CPC分类号： H02M5/293
摘要： Electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the controlling element. A circuit arrangement is provided for switching into the "on" condition primary power control field-effect transistor device only when the voltage thereacross is at a relatively low value and for switching into the "off" condition this device in a gradual manner, relatively slowly reducing currents flowing therethrough. A circuit arrangement for a command source directing operation of the primary power transfer control field-effect transistor device provides command source isolation.
摘要翻译： 提供电子开关电路，用于通过使用场效应晶体管器件作为控制元件来控制从交流极性电源向负载装置传输电力。 仅当电压跨越处于相对较低的值并且以逐渐的方式切换到“关闭”状态时，提供用于切换到“接通”状态的一次电力控制场效应晶体管器件的电路布置，相对缓慢 减少流过其中的电流。 用于指导主功率传输控制场效应晶体管器件的操作的指令源的电路装置提供命令源隔离。
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公开(公告)号：US4359654A
公开(公告)日：1982-11-16
申请号：US116052
申请日：1980-01-28
IPC分类号： H03K17/14 , H03K17/687 , H03K17/60 , H01L29/72
CPC分类号： H03K17/6874 , H03K17/145
摘要： An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element. A bypass means is used to provide shunting between one of the terminating regions of the field-effect transistor device and its substrate in situations where the field-effect transistor device is passing substantial current.
摘要翻译： 提供了一种电子开关电路，用于通过使用场效应晶体管器件作为主要功率控制元件来控制从交流极性电源向负载装置传输电力。 在场效应晶体管器件通过大量电流的情况下，旁路装置用于在场效应晶体管器件的其中一个终端区域与其衬底之间提供分流。
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5.发明授权Cascode combination of low and high voltage transistors for electrostatic discharge circuit 有权用于静电放电电路的低压和高压晶体管的串联组合公开(公告)号：US07791851B1
公开(公告)日：2010-09-07
申请号：US11339016
申请日：2006-01-24
申请人： Leo F. Luquette , Marc D. Hartranft , Scott Ward , Gina Liao
发明人： Leo F. Luquette , Marc D. Hartranft , Scott Ward , Gina Liao
CPC分类号： H01L27/0266
摘要： A method and apparatus to provide electrostatic discharge (ESD) protection to electronic circuits using a combination of low voltage and high voltage transistors.
摘要翻译： 一种使用低压和高压晶体管的组合向电子电路提供静电放电（ESD）保护的方法和装置。
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公开(公告)号：US4745450A
公开(公告)日：1988-05-17
申请号：US846732
申请日：1986-04-01
IPC分类号： H01L27/02 , H03K17/0812 , H01L29/78 , H02H3/20
CPC分类号： H01L27/0266 , H03K17/08122
摘要： Protection of the thin gate oxide of MOS field effect transistors from irreversible puncture due to undesired high voltages and currents, generated by electrostatic discharge through handling or otherwise, is provided by a two stage circuit that operates to shunt thousands or tens of volts around the protected transistors. A first stage, employing a thick field effect transistor, protects against the very high voltage. A second stage, employing a thin field effect transistor, protects against lower but still excessive voltage. The protection circuit is formed as part of an integrated circuit chip by surrounding the lead bonding pad to which the protected transistors are connected.
摘要翻译： MOS场效应晶体管的薄栅极氧化物由于不期望的高电压和电流而被不可逆的穿刺保护，由通过处理或其它方式的静电放电产生，由两级电路提供，该二级电路用于在受保护的环路周围分流数千或数十伏 晶体管。 采用厚场效应晶体管的第一级可防止非常高的电压。 采用薄场效应晶体管的第二阶段可防止较低但仍然过大的电压。 保护电路通过围绕被保护的晶体管连接到的引线焊盘而形成为集成电路芯片的一部分。
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公开(公告)号：US4605980A
公开(公告)日：1986-08-12
申请号：US585407
申请日：1984-03-02
IPC分类号： H01L27/02 , H03K17/0812 , H02H3/24
CPC分类号： H01L27/0266 , H03K17/08122
摘要： Protection of the thin gate oxide of MOS field effect transistors from irreversible puncture due to undesired high voltages and currents, generated by electrostatic discharge through handling or otherwise, is provided by a two stage circuit that operates to shunt thousands or tens of volts around the protected transistors. A first stage, employing a thick field effect transistor, protects against the very high voltage. A second stage, employing a thin field effect transistor, protects against lower but still excessive voltage. The protection circuit is formed as part of an integrated circuit chip by surrounding the lead bonding pad to which the protected transistors are connected.
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