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公开(公告)号:US20180314424A1
公开(公告)日:2018-11-01
申请号:US15957120
申请日:2018-04-19
Inventor: Peter B. GILLINGHAM , Graham ALLAN
IPC: G06F3/06 , G11C7/22 , G11C16/32 , G11C16/28 , G11C16/10 , G11C16/04 , G11C14/00 , G11C7/10 , G06F13/16 , H03K5/00
CPC classification number: G06F3/061 , G06F3/0655 , G06F3/0688 , G06F13/1694 , G11C7/1045 , G11C7/1078 , G11C7/1093 , G11C7/22 , G11C14/0018 , G11C16/0483 , G11C16/10 , G11C16/28 , G11C16/32 , H03K2005/00247 , Y02D10/14
Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
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公开(公告)号:US20170160935A1
公开(公告)日:2017-06-08
申请号:US15378650
申请日:2016-12-14
Inventor: Peter B. GILLINGHAM , Graham ALLAN
CPC classification number: G06F3/061 , G06F3/0655 , G06F3/0688 , G06F13/1694 , G11C7/1045 , G11C7/1078 , G11C7/1093 , G11C7/22 , G11C14/0018 , G11C16/0483 , G11C16/10 , G11C16/28 , G11C16/32 , H03K2005/00247 , Y02D10/14
Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
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公开(公告)号:US20170322730A1
公开(公告)日:2017-11-09
申请号:US15655336
申请日:2017-07-20
Inventor: Peter B. GILLINGHAM , Graham ALLAN
IPC: G06F3/06 , G11C16/32 , G11C16/28 , G11C16/10 , G11C7/22 , G11C7/10 , G06F13/16 , G11C14/00 , G11C16/04 , H03K5/00
CPC classification number: G06F3/061 , G06F3/0655 , G06F3/0688 , G06F13/1694 , G11C7/1045 , G11C7/1078 , G11C7/1093 , G11C7/22 , G11C14/0018 , G11C16/0483 , G11C16/10 , G11C16/28 , G11C16/32 , H03K2005/00247 , Y02D10/14
Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
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公开(公告)号:US20150009761A1
公开(公告)日:2015-01-08
申请号:US14491440
申请日:2014-09-19
Inventor: Peter B. GILLINGHAM , Graham ALLAN
IPC: G11C16/10
CPC classification number: G06F3/061 , G06F3/0655 , G06F3/0688 , G06F13/1694 , G11C7/1045 , G11C7/1078 , G11C7/1093 , G11C7/22 , G11C14/0018 , G11C16/0483 , G11C16/10 , G11C16/28 , G11C16/32 , H03K2005/00247 , Y02D10/14
Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
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公开(公告)号:US20190163365A1
公开(公告)日:2019-05-30
申请号:US16184607
申请日:2018-11-08
Inventor: Peter B. GILLINGHAM , Graham ALLAN
IPC: G06F3/06 , G11C16/32 , G11C7/10 , G11C7/22 , G11C16/28 , G11C14/00 , G06F13/16 , G11C16/10 , G11C16/04
Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
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公开(公告)号:US20160293265A1
公开(公告)日:2016-10-06
申请号:US15183162
申请日:2016-06-15
Inventor: Peter B. GILLINGHAM , Graham ALLAN
CPC classification number: G06F3/061 , G06F3/0655 , G06F3/0688 , G06F13/1694 , G11C7/1045 , G11C7/1078 , G11C7/1093 , G11C7/22 , G11C14/0018 , G11C16/0483 , G11C16/10 , G11C16/28 , G11C16/32 , H03K2005/00247 , Y02D10/14
Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
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公开(公告)号:US20150255167A1
公开(公告)日:2015-09-10
申请号:US14720317
申请日:2015-05-22
Inventor: Peter B. GILLINGHAM , Graham ALLAN
CPC classification number: G06F3/061 , G06F3/0655 , G06F3/0688 , G06F13/1694 , G11C7/1045 , G11C7/1078 , G11C7/1093 , G11C7/22 , G11C14/0018 , G11C16/0483 , G11C16/10 , G11C16/28 , G11C16/32 , H03K2005/00247 , Y02D10/14
Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
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