公开(公告)号：US09233957B2

公开(公告)日：2016-01-12

申请号：US14123043

申请日：2012-06-11

申请人： Coo-Min Chung ,  Choon-Ho Ryu ,  Yoon-Kyeong Lee ,  Jin-Sook Moon ,  Hye-Sung Lee ,  Seon-Jeong Lee ,  Kyung-Seok Oh

发明人： Coo-Min Chung ,  Choon-Ho Ryu ,  Yoon-Kyeong Lee ,  Jin-Sook Moon ,  Hye-Sung Lee ,  Seon-Jeong Lee ,  Kyung-Seok Oh

IPC分类号： C07D207/34 ,  C07D213/81 ,  C07D213/89 ,  C07D215/48 ,  C07D215/60 ,  C07D417/04 ,  C07D333/38 ,  C07D261/10 ,  C07D307/56 ,  C07D261/18 ,  C07D307/68 ,  C07D401/04 ,  C07D413/04 ,  C07D413/12

CPC分类号： C07D417/04 ,  C07D207/34 ,  C07D213/81 ,  C07D213/89 ,  C07D215/48 ,  C07D215/60 ,  C07D261/10 ,  C07D261/18 ,  C07D307/56 ,  C07D307/68 ,  C07D333/38 ,  C07D401/04 ,  C07D413/04 ,  C07D413/12

摘要： Provided are a novel derivative of 5-carbamoyl adamantan-2-yl amide of Formula (I), or a pharmaceutically acceptable salt thereof, and a pharmaceutical use thereof for inhibiting the activity of 11β-hydroxystreroid dehydrogenase type 1 (11b-HSD1) or for preventing and/or treating various diseases mediated by 11β-hydroxystreroid dehydrogenase type 1.

摘要翻译： 提供式（I）的5-氨基甲酰基金刚烷-2-基酰胺或其药学上可接受的盐的新型衍生物及其用于抑制11型β-葡萄糖醛酸脱氢酶1型（11b-HSD1）的活性的药物用途， 或用于预防和/或治疗由11型β-羟化神经元脱氢酶1介导的各种疾病。

公开(公告)号：US20140128427A1

公开(公告)日：2014-05-08

申请号：US14123043

申请日：2012-06-11

申请人： Coo-Min Chung ,  Choon-Ho Ryu ,  Yoon-Kyeong Lee ,  Jin-Sook Moon ,  Hye-Sung Lee ,  Seon-Jeong Lee ,  Kyung-Seok Oh

发明人： Coo-Min Chung ,  Choon-Ho Ryu ,  Yoon-Kyeong Lee ,  Jin-Sook Moon ,  Hye-Sung Lee ,  Seon-Jeong Lee ,  Kyung-Seok Oh

IPC分类号： C07D417/04 ,  C07D261/18 ,  C07D413/04 ,  C07D401/04 ,  C07D207/34 ,  C07D215/48 ,  C07D333/38 ,  C07D413/12 ,  C07D307/68 ,  C07D213/81

CPC分类号： C07D417/04 ,  C07D207/34 ,  C07D213/81 ,  C07D213/89 ,  C07D215/48 ,  C07D215/60 ,  C07D261/10 ,  C07D261/18 ,  C07D307/56 ,  C07D307/68 ,  C07D333/38 ,  C07D401/04 ,  C07D413/04 ,  C07D413/12

摘要： Provided are a novel derivative of 5-carbamoyl adamantan-2-yl amide or a pharmaceutically acceptable salt thereof, and a pharmaceutical use thereof for inhibiting the activity of 11β-hydroxystreroid dehydrogenase type 1 (11b-HSD1) or for preventing and/or treating various diseases mediated by 11β-hydroxystreroid dehydrogenase type 1.

摘要翻译： 本发明提供5-氨基甲酰基金刚烷-2-基酰胺或其药学上可接受的盐的新型衍生物及其用于抑制11β-半胱氨酸脱氢酶1型（11b-HSD1）活性的药物用途，或用于预防和/或 治疗11型和β-羟化神经元脱氢酶1型介导的各种疾病。

公开(公告)号：US07750432B2

公开(公告)日：2010-07-06

申请号：US12283457

申请日：2008-09-12

申请人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

发明人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

IPC分类号： H01L29/93

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

摘要翻译： 半导体熔丝盒包括熔丝结构和设置在熔丝结构和集成电路结构之间的保护结构。 保护结构具有至少一个不规则的侧面。 保护结构（其还可以包括在其下形成的垫）延伸超过熔丝结构的底部。 当激光束被引导到熔丝结构时，这种不规则的侧表面和保护结构的这种延伸将损坏能量的传播最小化到相邻的集成电路结构。

公开(公告)号：US07439102B2

公开(公告)日：2008-10-21

申请号：US11595253

申请日：2006-11-10

申请人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

发明人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

IPC分类号： H01L21/82

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

摘要翻译： 半导体熔丝盒包括熔丝结构和设置在熔丝结构和集成电路结构之间的保护结构。 保护结构具有至少一个不规则的侧面。 保护结构（其还可以包括在其下形成的垫）延伸超过熔丝结构的底部。 当激光束被引导到熔丝结构时，这种不规则的侧表面和保护结构的这种延伸将损坏能量的传播最小化到相邻的集成电路结构。

公开(公告)号：US07145196B2

公开(公告)日：2006-12-05

申请号：US11003612

申请日：2004-12-02

申请人： Ki-Jae Hur ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

发明人： Ki-Jae Hur ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

IPC分类号： H01L27/108

CPC分类号： H01L29/66659 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10888 ,  H01L29/7835

摘要： A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

摘要翻译： 场效应晶体管包括形成在半导体结构上的栅堆叠下的沟道区。 场效应晶体管还包括形成有掺杂沟道区的第一侧的第一掺杂物的漏极区，并且包括形成有掺杂沟道区的第二侧的第一掺杂剂的源极区。 漏极和源极区域被非对称地掺杂，使得沟道和漏极区域之间的第一电荷载流子谱具有比沟道和源极区域之间的第二电荷载流子谱更陡峭的斜率。

公开(公告)号：US20050082635A1

公开(公告)日：2005-04-21

申请号：US10960732

申请日：2004-10-07

申请人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

发明人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

IPC分类号： H01L21/82 ,  H01L23/525 ,  H01L29/00

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

摘要翻译： 半导体熔丝盒包括熔丝结构和设置在熔丝结构和集成电路结构之间的保护结构。 保护结构具有至少一个不规则的侧面。 保护结构（其还可以包括在其下形成的垫）延伸超过熔丝结构的底部。 当激光束被引导到熔丝结构时，这种不规则的侧表面和保护结构的这种延伸将损坏能量的传播最小化到相邻的集成电路结构。

公开(公告)号：US20160005852A1

公开(公告)日：2016-01-07

申请号：US14690575

申请日：2015-04-20

申请人： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

发明人： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/66795

摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

摘要翻译： 提供一种半导体器件及其制造方法。 半导体器件包括从基板突出并沿第一方向延伸的下翅片，下鳍片上的氧化膜，从氧化膜突出并与下翅片间隔开的上翅片， 下翅片和栅极结构，上翅片沿第二方向延伸以与上翅片相交，其中锗（Ge）包括在位于下翅片和上翅片之间的氧化膜的一部分中。

公开(公告)号：US20090014829A1

公开(公告)日：2009-01-15

申请号：US12283457

申请日：2008-09-12

申请人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

发明人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

IPC分类号： H01L23/525

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

摘要翻译： 半导体熔丝盒包括熔丝结构和设置在熔丝结构和集成电路结构之间的保护结构。 保护结构具有至少一个不规则的侧面。 保护结构（其还可以包括在其下形成的垫）延伸超过熔丝结构的底部。 当激光束被引导到熔丝结构时，这种不规则的侧表面和保护结构的这种延伸将损坏能量的传播最小化到相邻的集成电路结构。

公开(公告)号：US07154160B2

公开(公告)日：2006-12-26

申请号：US10960732

申请日：2004-10-07

申请人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

发明人： Min-Sung Kang ,  Kyung-Seok Oh ,  Joo-Sung Park ,  Jung-Hyun Shin

IPC分类号： H01L29/00

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

公开(公告)号：US10103266B2

公开(公告)日：2018-10-16

申请号：US14690575

申请日：2015-04-20

申请人： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

发明人： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC分类号： H01L29/78 ,  H01L21/84 ,  H01L29/66 ,  H01L27/12

摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.