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    METHODS AND CIRCUITS TO REDUCE THRESHOLD VOLTAGE TOLERANCE AND SKEW IN MULTI-THRESHOLD VOLTAGE APPLICATIONS
    1.
    发明申请
    METHODS AND CIRCUITS TO REDUCE THRESHOLD VOLTAGE TOLERANCE AND SKEW IN MULTI-THRESHOLD VOLTAGE APPLICATIONS 审中-公开
    降低多电压电压应用中阈值电压公差和电流的方法和电路

    公开(公告)号：US20080246533A1

    公开(公告)日：2008-10-09

    申请号：US12138514

    申请日：2008-06-13

    申请人： Corey Kenneth Barrows ,  Douglas W. Kemerer ,  Stephen Gerard Shuma ,  Douglas Willard Stout ,  Oscar Conrad Strohacker ,  Mark Steven Styduhar ,  Paul Steven Zuchowski

    发明人： Corey Kenneth Barrows ,  Douglas W. Kemerer ,  Stephen Gerard Shuma ,  Douglas Willard Stout ,  Oscar Conrad Strohacker ,  Mark Steven Styduhar ,  Paul Steven Zuchowski

    IPC分类号： H03K3/01

    CPC分类号： G06F17/5063 ,  H01L27/088 ,  H01L27/092

    摘要： A circuit and a method for adjusting the performance of an integrated circuit, the circuit includes: first and second sets of FETs having respective first and second threshold voltages, the first threshold voltage different from the second threshold voltage; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and a performance measurement of the second monitor circuit; and a control unit configured to generate a control signal to a voltage regulator based on the compare signal, the voltage regulator configured to supply a bias voltage to wells of FETs of the second set of FETs, the value of the bias voltage based on the control signal.

    摘要翻译： 一种用于调整集成电路性能的电路和方法，所述电路包括：具有相应的第一和第二阈值电压的第一和第二组FET，所述第一阈值电压不同于所述第二阈值电压; 包含第一组FET的至少一个FET的第一监视器电路和包含第二组FET的至少一个FET的第二监视电路; 比较电路，被配置为基于所述第一监视电路的性能测量和所述第二监视电路的性能测量来产生比较信号; 以及控制单元，被配置为基于所述比较信号向电压调节器产生控制信号，所述电压调节器被配置为向所述第二组FET的FET的阱提供偏置电压，所述偏置电压的值基于所述控制 信号。

    Circuits to reduce threshold voltage tolerance and skew in multi-threshold voltage applications
    2.
    发明授权
    Circuits to reduce threshold voltage tolerance and skew in multi-threshold voltage applications 有权
    降低多阈值电压应用中阈值电压容限和偏斜的电路

    公开(公告)号：US07459958B2

    公开(公告)日：2008-12-02

    申请号：US11424961

    申请日：2006-06-19

    申请人： Corey Kenneth Barrows ,  Douglas W. Kemerer ,  Stephen Gerard Shuma ,  Douglas Willard Stout ,  Oscar Conrad Strohacker ,  Mark Steven Styduhar ,  Paul Steven Zuchowski

    发明人： Corey Kenneth Barrows ,  Douglas W. Kemerer ,  Stephen Gerard Shuma ,  Douglas Willard Stout ,  Oscar Conrad Strohacker ,  Mark Steven Styduhar ,  Paul Steven Zuchowski

    IPC分类号： H03K3/01

    CPC分类号： G06F17/5063 ,  H01L27/088 ,  H01L27/092

    摘要： A circuit and a method for adjusting the performance of an integrated circuit, the circuit includes: first and second sets of FETs having respective first and second threshold voltages, the first threshold voltage different from the second threshold voltage; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit adapted to generate a compare signal based on a performance measurement of the first monitor circuit and a performance measurement of the second monitor circuit; and a control unit adapted to generate a control signal to a voltage regulator based on the compare signal, the voltage regulator adapted to supply a bias voltage to wells of FETs of the second set of FETs, the value of the bias voltage based on the control signal.

    摘要翻译： 一种用于调整集成电路性能的电路和方法，所述电路包括：具有相应的第一和第二阈值电压的第一和第二组FET，所述第一阈值电压不同于所述第二阈值电压; 包含第一组FET的至少一个FET的第一监视器电路和包含第二组FET的至少一个FET的第二监视电路; 比较电路，其适于基于第一监视电路的性能测量和第二监视电路的性能测量来产生比较信号; 以及控制单元，其适于基于所述比较信号向所述电压调节器产生控制信号，所述电压调节器适于向所述第二组FET的FET的阱提供偏置电压，所述偏置电压的值基于所述控制 信号。

    Method, system and apparatus for aggregating failures across multiple memories and applying a common defect repair solution to all of the multiple memories
    8.
    发明授权
    Method, system and apparatus for aggregating failures across multiple memories and applying a common defect repair solution to all of the multiple memories 有权
    用于聚合多个存储器上的故障的方法，系统和装置，并将共同的缺陷修复解决方案应用于所有多个存储器

    公开(公告)号：US06993692B2

    公开(公告)日：2006-01-31

    申请号：US10604195

    申请日：2003-06-30

    申请人： Michael R. Ouellette ,  Gustavo Enrique Tellez ,  Paul Steven Zuchowski

    发明人： Michael R. Ouellette ,  Gustavo Enrique Tellez ,  Paul Steven Zuchowski

    IPC分类号： G11C29/00 ,  G06F11/00

    CPC分类号： G11C29/4401 ,  G11C29/44 ,  G11C29/789 ,  G11C29/802 ,  G11C29/806 ,  G11C2029/0401

    摘要： An integrated circuit includes a plurality of separate memory arrays each having a respective one of a plurality of inputs and a respective one of a plurality of outputs. Each output provides an output value indicative of whether a storage location associated with an applied address is passing or failing. The integrated circuit further includes a shared built-in self-test (BIST) and repair system coupled to all of the plurality of inputs and all of the plurality of outputs. The shared BIST and repair system applies addresses and data to the plurality of inputs to test the plurality of memory arrays for failing storage locations. In response to detection of a failing storage location in any of the plurality of memory arrays, the shared BIST and repair system applies a common address remapping to all of the plurality of memory arrays to remap, in each memory array, the address associated with the failing storage location to a different storage location

    摘要翻译： 集成电路包括多个单独的存储器阵列，每个存储器阵列具有多个输入中的相应一个和多个输出中的相应一个。 每个输出提供指示与应用地址相关联的存储位置是否通过或失败的输出值。 集成电路还包括耦合到所有多个输入和所有多个输出的共享内置自检（BIST）和修复系统。 共享的BIST和修复系统将地址和数据应用于多个输入以测试多个存储器阵列以用于故障存储位置。 响应于检测多个存储器阵列中的任一个中的故障存储位置，共享BIST和修复系统将公共地址重新映射应用于所有多个存储器阵列，以在每个存储器阵列中重新映射与该存储器阵列相关联的地址 将存储位置的故障存储到不同的存储位置

    Method for reducing design effect of wearout mechanisms on signal skew in integrated circuit design
    9.
    发明授权
    Method for reducing design effect of wearout mechanisms on signal skew in integrated circuit design 失效
    降低集成电路设计中信号偏移的设计效应的方法

    公开(公告)号：US06651230B2

    公开(公告)日：2003-11-18

    申请号：US09683276

    申请日：2001-12-07

    申请人： John Maxwell Cohn ,  Jose Luis Pontes Correia Neves ,  Paul Steven Zuchowski

    发明人： John Maxwell Cohn ,  Jose Luis Pontes Correia Neves ,  Paul Steven Zuchowski

    IPC分类号： G06F1750

    CPC分类号： G06F17/505 ,  G06F1/10

    摘要： A method for reducing the effect of signal skew degradation in the design of an integrated circuit is provided. First, a circuit design library is created describing library cells as a function of one or more environmental variable, wherein the one or more environmental variable includes a skew degradation variable indicating skew degradation of a signal as a function of a total number of signal switches of the signal. Then, the integrated circuit design is modeled utilizing the circuit design library to determine a first skew degradation for each of the first and second signals at a first predetermined number of signal switches, and a second skew degradation for each of the first and second signals for a second predetermined number of signal switches, and further to determine a first relative skew degradation for a first predetermined number of signal switches and a second relative skew degradation for a second predetermined number of signal switches, wherein a relative skew degradation is equal to the difference of the skew degradation of the first signal and the skew degradation of the second signal for a given number of signal switches. Next, a skew shift equal to the difference between the first relative skew degradation and the second relative skew degradation is calculated. Finally, the integrated circuit design is modified such that a skew degradation of the first signal at the first predetermined number of signal switches is determined to be equal to the first skew degradation of the first signal minus half of the skew shift.

    摘要翻译： 提供了一种降低集成电路设计中的信号偏差劣化的方法。 首先，创建描述作为一个或多个环境变量的函数的库单元的电路设计库，其中所述一个或多个环境变量包括歪斜劣化变量，其指示作为信号开关总数的函数的信号的歪斜退化 信号。 然后，使用电路设计库对集成电路设计进行建模，以在第一预定数量的信号开关处确定第一和第二信号中的每一个的第一偏斜劣化，以及用于第一和第二信号中的每一个的第二偏斜劣化 第二预定数量的信号开关，并且还用于确定第一预定数量的信号开关的第一相对偏斜劣化和第二预定数量的信号开关的第二相对偏斜劣化，其中相对偏斜劣化等于差 对于给定数量的信号开关，第一信号的偏斜劣化和第二信号的偏斜劣化。 接下来，计算等于第一相对偏斜劣化和第二相对偏斜劣化之间的差的偏移偏移。 最后，对集成电路设计进行修改，使得第一预定数量的信号开关处的第一信号的偏斜劣化被确定为等于第一信号的第一偏斜劣化减去偏移偏移的一半。

    Three dimensional track-based parasitic extraction
    10.
    发明授权
    Three dimensional track-based parasitic extraction 失效
    基于三维轨道的寄生提取

    公开(公告)号：US06185722B2

    公开(公告)日：2001-02-06

    申请号：US09037469

    申请日：1998-03-10

    申请人： Laura Rohwedder Darden ,  James John Engel ,  Peter Anton Habitz ,  William John Livingstone ,  Daniel Joseph Mainiero ,  Jeannie Harrigan Panner ,  Michael Timothy Trick ,  Paul Steven Zuchowski

    发明人： Laura Rohwedder Darden ,  James John Engel ,  Peter Anton Habitz ,  William John Livingstone ,  Daniel Joseph Mainiero ,  Jeannie Harrigan Panner ,  Michael Timothy Trick ,  Paul Steven Zuchowski

    IPC分类号： G06F1750

    CPC分类号： G06F17/5036 ,  G06F17/5018 ,  G06F2217/36

    摘要： A computerized tool or method that calculates the capacitance and resistance of each global wire on the chip, one wire at a time. The invention steps along a track containing a wire segment, grid point by grid point, calculating the resistance and capacitance at that point. At each grid point it searches the neighboring tracks within the surrounding cube for adjacent elements that could cause capacitive effects or affect the resistance of the wire. The method delivers capacitance and resistance values for each process condition for a grid unit length of wire, given the wire type and 3 dimensional environment of the wire segment. The capacitance and resistance at a grid point along the wire are generally determined by one table lookup for wire types based on the surrounding environment. These values are added along wire segments to deliver accurate 3 dimensional capacitances and resistances. The invention can also provide for wires and spaces of various types and widths not provided for in the tables and for calculation of net to net coupling capacitances.

    摘要翻译： 一种计算机工具或方法，用于计算芯片上每根全局线的电容和电阻，一次一根线。 本发明沿着包含线段的轨道，通过网格点的网格点，计算该点处的电阻和电容。 在每个网格点，它会搜索相邻元素周围的相邻轨道，以产生电容效应或影响线的电阻。 鉴于线段的线型和三维环境，该方法为网格单元长度的线的每个工艺条件提供电容和电阻值。 沿线的网格点的电容和电阻通常由基于周围环境的电线类型的一个表查找来确定。 这些值沿线段添加以提供精确的3维电容和电阻。 本发明还可以提供在表中未提供的各种类型和宽度的电线和空间以及用于计算网络与网络耦合电容的电线和空间。