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    Chemical vapor deposition methods
    1.
    发明授权
    Chemical vapor deposition methods 失效
    化学气相沉积法

    公开(公告)号：US06858264B2

    公开(公告)日：2005-02-22

    申请号：US10132003

    申请日：2002-04-24

    申请人： Ross S. Dando ,  Philip H. Campbell ,  Craig M. Carpenter ,  Allen P. Mardian

    发明人： Ross S. Dando ,  Philip H. Campbell ,  Craig M. Carpenter ,  Allen P. Mardian

    IPC分类号： C23C16/44 ,  C23C16/56

    CPC分类号： C23C16/4405 ,  C23C16/4412

    摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.

    摘要翻译： 化学气相沉积室具有从其延伸的真空排气管。 在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。 真空排气管线的至少一部分与沉积室隔离。 在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。 在所述流动之后，真空排气管线和沉积室的部分设置成彼此流体连通，并且在有效地将流出物产物沉积在真空内壁上的条件下，在沉积室内的第二多个基板上沉积材料 排气管路。

    Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substrates
    3.
    发明授权
    Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substrates 失效
    替代半导体衬底沉积工艺组件硬件的至少一部分的方法以及在多个半导体衬底上沉积材料的方法

    公开(公告)号：US06787373B2

    公开(公告)日：2004-09-07

    申请号：US10396268

    申请日：2003-03-24

    申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

    发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

    IPC分类号： H01L2100

    CPC分类号： C23C16/4401 ,  C23C16/54 ,  Y10S414/137

    摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.

    摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少该夹具安装到身体的远端部分。 接合器的尺寸适合于通过身体的所述通道移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。

    Deposition methods utilizing microwave excitation
    5.
    发明授权
    Deposition methods utilizing microwave excitation 失效
    利用微波激发的沉积方法

    公开(公告)号：US07422986B2

    公开(公告)日：2008-09-09

    申请号：US11519430

    申请日：2006-09-11

    申请人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

    发明人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

    IPC分类号： H01L21/26

    CPC分类号： C23C16/45536 ,  C23C16/45525 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01Q21/0087

    摘要： The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

    摘要翻译： 本发明包括具有反应室的沉积设备和室外的微波源。 微波源构造成将微波辐射引导到腔室。 该室包括一个窗口，通过该窗口，微波源的微波辐射可以通过该窗口进入腔室。 本发明还包括沉积方法（例如CVD或ALD方法），其中在将材料沉积在反应室内的衬底上时，利用微波辐射来激活反应室内的至少一个组分。

    Chemical vapor deposition apparatus
    7.
    发明授权
    Chemical vapor deposition apparatus 失效
    化学气相沉积装置

    公开(公告)号：US07270715B2

    公开(公告)日：2007-09-18

    申请号：US10695726

    申请日：2003-10-28

    申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

    CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  Y10S156/914 ,  Y10S414/139

    摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

    摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。

    Semiconductor substrate processing chamber and accessory attachment interfacial structure
    8.
    发明授权
    Semiconductor substrate processing chamber and accessory attachment interfacial structure 失效
    半导体衬底处理室和附件附件界面结构

    公开(公告)号：US07192487B2

    公开(公告)日：2007-03-20

    申请号：US10695727

    申请日：2003-10-28

    申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

    发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/301

    CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

    摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

    摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。

    Chemical vapor deposition apparatus
    10.
    发明授权
    Chemical vapor deposition apparatus 失效
    化学气相沉积装置

    公开(公告)号：US06814813B2

    公开(公告)日：2004-11-09

    申请号：US10132767

    申请日：2002-04-24

    申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    IPC分类号： C23C1600

    CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  Y10S156/914 ,  Y10S414/139

    摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

    摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。