公开(公告)号：US20220392857A1

公开(公告)日：2022-12-08

申请号：US17340492

申请日：2021-06-07

Applicant: Cree Inc.

Inventor： David Rice ,  Jeremy Fisher

IPC: H01L23/66 ,  H03F3/195 ,  H01P3/08 ,  H01L23/00

Abstract: A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

公开(公告)号：US11594628B2

公开(公告)日：2023-02-28

申请号：US17111561

申请日：2020-12-04

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Jennifer Qingzhu Gao ,  Jeremy Fisher ,  Scott Sheppard

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H03F1/02 ,  H03F3/193 ,  H03F3/21

Abstract: A gallium nitride based monolithic microwave integrated circuit includes a substrate, a channel layer on the substrate and a barrier layer on the channel layer. A recess is provided in a top surface of the barrier layer. First gate, source and drain electrodes are provided on the barrier layer opposite the channel layer, with a bottom surface of the first gate electrode in direct contact with the barrier layer. Second gate, source and drain electrodes are also provided on the barrier layer opposite the channel layer. A gate insulating layer is provided in the recess in the barrier layer, and the second gate electrode is on the gate insulating layer opposite the barrier layer and extending into the recess. The first gate, source and drain electrodes comprise the electrodes of a depletion mode transistor, and the second gate, source and drain electrodes comprise the electrodes of an enhancement mode transistor.

公开(公告)号：US20220130985A1

公开(公告)日：2022-04-28

申请号：US17325576

申请日：2021-05-20

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Terry Alcorn ,  Dan Namishia ,  Jia Guo ,  Matt King ,  Saptharishi Sriram ,  Jeremy Fisher ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/66

Abstract: A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.

公开(公告)号：US10861963B2

公开(公告)日：2020-12-08

申请号：US16663843

申请日：2019-10-25

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Jennifer Qingzhu Gao ,  Jeremy Fisher ,  Scott Sheppard

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H03F1/02 ,  H03F3/193 ,  H03F3/21

Abstract: A gallium nitride based monolithic microwave integrated circuit includes a substrate, a channel layer on the substrate and a barrier layer on the channel layer. A recess is provided in a top surface of the barrier layer. First gate, source and drain electrodes are provided on the barrier layer opposite the channel layer, with a bottom surface of the first gate electrode in direct contact with the barrier layer. Second gate, source and drain electrodes are also provided on the barrier layer opposite the channel layer. A gate insulating layer is provided in the recess in the barrier layer, and the second gate electrode is on the gate insulating layer opposite the barrier layer and extending into the recess. The first gate, source and drain electrodes comprise the electrodes of a depletion mode transistor, and the second gate, source and drain electrodes comprise the electrodes of an enhancement mode transistor.

公开(公告)号：US20200066892A1

公开(公告)日：2020-02-27

申请号：US16663843

申请日：2019-10-25

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Jennifer Qingzhu Gao ,  Jeremy Fisher ,  Scott Sheppard

IPC: H01L29/778 ,  H03F3/193 ,  H03F3/21 ,  H03F1/02 ,  H01L29/20 ,  H01L29/66

Abstract: A gallium nitride based monolithic microwave integrated circuit includes a substrate, a channel layer on the substrate and a barrier layer on the channel layer. A recess is provided in a top surface of the barrier layer. First gate, source and drain electrodes are provided on the barrier layer opposite the channel layer, with a bottom surface of the first gate electrode in direct contact with the barrier layer. Second gate, source and drain electrodes are also provided on the barrier layer opposite the channel layer. A gate insulating layer is provided in the recess in the barrier layer, and the second gate electrode is on the gate insulating layer opposite the barrier layer and extending into the recess. The first gate, source and drain electrodes comprise the electrodes of a depletion mode transistor, and the second gate, source and drain electrodes comprise the electrodes of an enhancement mode transistor.

公开(公告)号：US20220360230A1

公开(公告)日：2022-11-10

申请号：US17313567

申请日：2021-05-06

Applicant: Cree, Inc.

Inventor： Marvin Marbell ,  Jonathan Chang ,  Haedong Jang ,  Qianli Mu ,  Michael LeFevre ,  Jeremy Fisher ,  Basim Noori

IPC: H03F1/02 ,  H03F1/56 ,  H01L23/66 ,  H01L23/498

Abstract: A semiconductor device package includes a plurality of input leads and an output lead, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combination circuit configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal to the output lead.

公开(公告)号：US20220130965A1

公开(公告)日：2022-04-28

申请号：US17325666

申请日：2021-05-20

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Jeremy Fisher ,  Matt King ,  Jia Guo ,  Qianli Mu ,  Scott Sheppard

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: A transistor device includes a semiconductor layer, source and drain contacts on the semiconductor layer, a gate contact on the semiconductor layer between the source and drain contacts, and a field plate over the semiconductor layer between the gate contact and the drain contact. The transistor device includes a first electrical connection between the field plate and the source contact that is outside an active region of the transistor device, and a second electrical connection between the field plate and the source contact.

公开(公告)号：US11257940B2

公开(公告)日：2022-02-22

申请号：US16741835

申请日：2020-01-14

Applicant: Cree, Inc.

Inventor： Evan Jones ,  Jeremy Fisher

IPC: H01L29/778 ,  H01L49/02 ,  H01L29/45 ,  H01L29/92

Abstract: A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.

公开(公告)号：US10516043B1

公开(公告)日：2019-12-24

申请号：US16039370

申请日：2018-07-19

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Jennifer Qingzhu Gao ,  Jeremy Fisher ,  Scott Sheppard

IPC: H01L29/66 ,  H01L29/778 ,  H03F3/193 ,  H01L29/20 ,  H03F3/21 ,  H03F1/02

Abstract: A gallium nitride based monolithic microwave integrated circuit includes a substrate, a channel layer on the substrate and a barrier layer on the channel layer. A recess is provided in a top surface of the barrier layer. First gate, source and drain electrodes are provided on the barrier layer opposite the channel layer, with a bottom surface of the first gate electrode in direct contact with the barrier layer. Second gate, source and drain electrodes are also provided on the barrier layer opposite the channel layer. A gate insulating layer is provided in the recess in the barrier layer, and the second gate electrode is on the gate insulating layer opposite the barrier layer and extending into the recess. The first gate, source and drain electrodes comprise the electrodes of a depletion mode transistor, and the second gate, source and drain electrodes comprise the electrodes of an enhancement mode transistor.

公开(公告)号：US20220223700A1

公开(公告)日：2022-07-14

申请号：US17144346

申请日：2021-01-08

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Jia Guo ,  Jeremy Fisher ,  Scott Sheppard

IPC: H01L29/417 ,  H03F3/195 ,  H03F3/213 ,  H01L29/20 ,  H01L29/778 ,  H01L23/66 ,  H01L29/40

Abstract: A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure comprising a barrier layer on a channel layer, first and second source/drain regions in the semiconductor layer structure, first and second source/drain contacts on the respective first and second source/drain regions, and a longitudinally-extending gate finger that is between the first and second source/drain contacts. The first and second source/drain contacts each has an inner sidewall that faces the gate finger and an opposed outer sidewall. The first source/drain region extends a first distance from a lower edge of the inner sidewall of the first source/drain contact towards the second source/drain region along a transverse axis that extends parallel to a plane defined by the upper surface of the semiconductor layer structure, and extends a second, smaller distance from a lower edge of the outer sidewall of the first source/drain contact away from the second source/drain region.