公开(公告)号：US20100096261A1

公开(公告)日：2010-04-22

申请号：US12253603

申请日：2008-10-17

申请人： DANIEL J. HOFFMAN ,  Ying Rui ,  Karl M. Brown ,  John Pipitone ,  Lara Hawrylchak

发明人： DANIEL J. HOFFMAN ,  Ying Rui ,  Karl M. Brown ,  John Pipitone ,  Lara Hawrylchak

IPC分类号： C23C14/35

CPC分类号： H01J37/3408 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3444 ,  H01J37/3455

摘要： In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.

摘要翻译： 在具有在天花板上的溅射靶的PVD反应器中，包围旋转磁体组件的导电壳体具有用于旋转磁体轴的中心端口。 壳体的导电中空圆筒围绕主轴的外部。 RF功率耦合到从中空圆柱体径向延伸的径向RF连接杆。 直流电力耦合到从中空圆柱体径向延伸的另一个径向直流连接杆。

公开(公告)号：US20130008778A1

公开(公告)日：2013-01-10

申请号：US13614704

申请日：2012-09-13

申请人： DANIEL J. HOFFMAN ,  KARL M. BROWN ,  YING RUI ,  JOHN PIPITONE

发明人： DANIEL J. HOFFMAN ,  KARL M. BROWN ,  YING RUI ,  JOHN PIPITONE

IPC分类号： C23C14/54 ,  C23C14/50 ,  C23C14/14 ,  C23C14/34

CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

公开(公告)号：US20120149192A1

公开(公告)日：2012-06-14

申请号：US13223788

申请日：2011-09-01

申请人： KARL BROWN ,  ALAN RITCHIE ,  JOHN PIPITONE ,  YING RUI ,  DANIEL J. HOFFMAN

发明人： KARL BROWN ,  ALAN RITCHIE ,  JOHN PIPITONE ,  YING RUI ,  DANIEL J. HOFFMAN

IPC分类号： H01L21/768

CPC分类号： C23C14/046 ,  C23C14/185 ,  C23C14/3492

摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.

摘要翻译： 本文提供了以高纵横比特征沉积金属的方法。 在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子 同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在 至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。