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    Apparatus for physical vapor deposition having centrally fed RF energy
    3.
    发明授权
    Apparatus for physical vapor deposition having centrally fed RF energy 有权
    用于物理气相沉积的装置具有中央馈送的RF能量

    公开(公告)号：US08795488B2

    公开(公告)日：2014-08-05

    申请号：US13048440

    申请日：2011-03-15

    申请人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

    发明人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

    IPC分类号： C23C14/40

    CPC分类号： H01J37/3405 ,  H01J37/3411

    摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

    摘要翻译： 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

    Process kit for RF physical vapor deposition
    4.
    发明授权
    Process kit for RF physical vapor deposition 有权
    射频物理气相沉积工艺套件

    公开(公告)号：US09123511B2

    公开(公告)日：2015-09-01

    申请号：US12433315

    申请日：2009-04-30

    申请人： Donny Young ,  Lara Hawrylchak

    发明人： Donny Young ,  Lara Hawrylchak

    IPC分类号： C23C14/35 ,  H01J37/32 ,  H01J37/34

    CPC分类号： H01J37/32651 ,  C23C14/35 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/3441

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
    5.
    发明申请
    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 有权
    RF物理蒸气沉积工艺套件

    公开(公告)号：US20120205241A1

    公开(公告)日：2012-08-16

    申请号：US13457438

    申请日：2012-04-26

    申请人： Donny Young ,  Lara Hawrylchak

    发明人： Donny Young ,  Lara Hawrylchak

    IPC分类号： C23C14/34

    CPC分类号： H01J37/32651 ,  C23C14/35 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/3441

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
    7.
    发明申请
    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
    RF物理蒸气沉积工艺套件

    公开(公告)号：US20110036709A1

    公开(公告)日：2011-02-17

    申请号：US12850312

    申请日：2010-08-04

    申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

    发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

    IPC分类号： C23C14/34

    CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

    EXTENDED LIFE DEPOSITION RING
    8.
    发明申请
    EXTENDED LIFE DEPOSITION RING 审中-公开
    延长生命沉积环

    公开(公告)号：US20120042825A1

    公开(公告)日：2012-02-23

    申请号：US13195370

    申请日：2011-08-01

    申请人： Lara Hawrylchak

    发明人： Lara Hawrylchak

    IPC分类号： B05C11/00

    CPC分类号： H01L21/68735 ,  C23C16/4585

    摘要： A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body.

    摘要翻译： 提供了一种用于半导体处理室的处理套件。 在一个实施例中，处理套件包括环形沉积环主体，其包括凹入主体的上表面的槽，其中槽的最低点延伸到由顶壁限定的至少一半的环体的厚度， 一个底壁。 在另一个实施例中，处理套件包括环形沉积环体，其包括限定主体上表面的至少一部分的倾斜上壁，其中，倾斜的上壁的峰从主体的内壁延伸至至少 内壁与身体外壁之间的一半距离。

    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
    10.
    发明申请
    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 有权
    RF物理蒸气沉积工艺套件

    公开(公告)号：US20090272647A1

    公开(公告)日：2009-11-05

    申请号：US12433315

    申请日：2009-04-30

    申请人： Donny Young ,  Lara Hawrylchak

    发明人： Donny Young ,  Lara Hawrylchak

    IPC分类号： C23C14/34

    CPC分类号： H01J37/32651 ,  C23C14/35 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/3441

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。