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    Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
    5.
    发明申请
    Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
    在晶片表面具有各向同性离子速度分布的物理气相沉积方法

    公开(公告)号：US20090229969A1

    公开(公告)日：2009-09-17

    申请号：US12077067

    申请日：2008-03-14

    申请人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

    发明人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

    IPC分类号： C23C14/34

    CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

    摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

    摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

    Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
    6.
    发明授权
    Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
    用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率

    公开(公告)号：US07820020B2

    公开(公告)日：2010-10-26

    申请号：US11140513

    申请日：2005-05-25

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.

    摘要翻译： 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流 目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向 晶片支撑座的表面。

    Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
    7.
    发明授权
    Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
    用于通过工件施加的源极和偏置功率频率的金属等离子体气相沉积和再溅射的装置和方法

    公开(公告)号：US07268076B2

    公开(公告)日：2007-09-11

    申请号：US11052012

    申请日：2005-02-03

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2855 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32706 ,  H01J37/3408 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865

    摘要： Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

    摘要翻译： 在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。 将工艺气体引入所述真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

    Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target
    8.
    发明授权
    Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target 有权
    用于等离子体增强物理气相沉积的方法，其具有施加到目标的RF源功率

    公开(公告)号：US08062484B2

    公开(公告)日：2011-11-22

    申请号：US11222230

    申请日：2005-09-07

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.

    摘要翻译： 在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入 载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。 该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。 该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

    Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
    9.
    发明授权
    Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron 有权
    具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管

    公开(公告)号：US08562798B2

    公开(公告)日：2013-10-22

    申请号：US11222231

    申请日：2005-09-07

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01B11/02 ,  H01B11/06 ,  H02G3/04 ,  H05K1/09

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

    摘要翻译： 物理气相沉积反应器包括金属溅射靶，耦合到金属溅射靶的直流溅射功率源和面向金属溅射靶的晶片支撑基座。 可移动磁体阵列与金属溅射靶的与晶片支撑基座相对的一侧相邻。 固体金属RF馈送杆接合金属溅射靶并且在与晶片支撑基座相对的一侧上从靶的表面延伸。 VHF阻抗匹配电路耦合到与金属溅射靶相对的RF馈电杆的端部以及耦合到所述VHF阻抗匹配电路的VHF RF发电发生器。 优选地，反应器还包括中心轴，可动磁体阵列围绕该中心轴可旋转，中心轴具有轴向延伸的中空通道，RF馈送杆延伸穿过通道。