公开(公告)号：US20160207148A1

公开(公告)日：2016-07-21

申请号：US14914061

申请日：2014-11-10

Applicant: DENSO CORPORATION

Inventor： Wataru KOBAYASHI ,  Eiji HAYASHI ,  Kazuki KOUDA

IPC: B23K26/359 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  B23K26/00 ,  H01L21/48

CPC classification number: B23K26/359 ,  B23K26/00 ,  B23K26/0006 ,  B23K26/0626 ,  B23K26/354 ,  B23K26/355 ,  B23K26/3584 ,  B23K2101/40 ,  B23K2103/08 ,  H01L21/4821 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/32 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2924/40102 ,  H01L2924/014 ,  H01L2924/00014

Abstract: An object is to form a rough surface for ensuring adhesion between a metal member and other members, or a rough surface for suppressing solder expansion in the metal member using an energy beam having energy density lower than a related art. A surface processing method of a metal member, in which a metal thin film is arranged on a surface of a base, includes: melting or evaporating a surface portion of the metal thin film by irradiating the metal thin film with a pulse-oscillated laser beam having energy density of 100 J/cm2 or less and a pulse width of 1 μs or less; and roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating. The metal thin film is made of at least one of Ni, Au, Pd, and Ag as a main component.

Abstract translation: 目的是形成用于确保金属构件与其它构件之间的粘合的粗糙表面，或者使用能量密度低于现有技术的能量束来抑制金属构件中的焊料膨胀的粗糙表面。 金属构件的表面处理方法，其中金属薄膜布置在基体的表面上，包括：通过用脉冲振荡的激光束照射金属薄膜来熔化或蒸发金属薄膜的表面部分 能量密度为100J / cm 2以下，脉冲宽度为1μs以下; 并且通过在熔化或蒸发之后固化金属薄膜的表面部分来使金属薄膜的表面变粗糙。 金属薄膜由Ni，Au，Pd和Ag中的至少一种作为主要成分。

公开(公告)号：US20170278774A1

公开(公告)日：2017-09-28

申请号：US15508506

申请日：2015-12-04

Applicant: DENSO CORPORATION

Inventor： Eiji HAYASHI ,  Wataru KOBAYASHI ,  Eiji NOMURA ,  Kazuki KOUDA

IPC: H01L23/495 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56 ,  H01L25/065 ,  H01L23/29 ,  H01L21/48

CPC classification number: H01L23/4952 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4334 ,  H01L23/488 ,  H01L23/49527 ,  H01L23/49562 ,  H01L23/49575 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/33 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A semiconductor device includes: a semiconductor chip having an electrode on one surface; a first conductive member disposed on one surface side of the semiconductor chip; a metal member having a base member and a membrane and disposed between the semiconductor chip and the first conductive member; a first solder disposed between the electrode of the semiconductor chip and the metal member; and a second solder disposed between the metal member and the first conductive member. The membrane has a metal thin film arranged on the surface of the base member and an uneven oxide film. The uneven oxide film is arranged on the metal thin film in at least a part of a connection region of a surface of the metal member, the connection region connecting a first connection region to which the first solder is connected and a second connection region to which the second solder is connected.