公开(公告)号：US20230420523A1

公开(公告)日：2023-12-28

申请号：US18462595

申请日：2023-09-07

Applicant: DENSO CORPORATION

Inventor： Yusuke HAYAMA ,  Yusuke YAMASHITA ,  Keita KATAOKA ,  Yukihiko WATANABE

IPC: H01L29/32 ,  H01L29/16 ,  H01L29/06 ,  H01L29/861 ,  H01L29/78

CPC classification number: H01L29/32 ,  H01L29/1608 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/063

Abstract: A semiconductor device includes a first main electrode, a second main electrode, and a semiconductor layer. The semiconductor layer includes a p-type semiconductor region disposed at a position exposed from the upper surface of the semiconductor layer and electrically connected to the second main electrode, and an n-type semiconductor region in contact with the p-type semiconductor region and separated from the second main electrode by the p-type semiconductor region. The n-type semiconductor region has a trap region provided at a position in contact with the p-type semiconductor region, and a hole trap is formed in the trap region.

公开(公告)号：US20240110970A1

公开(公告)日：2024-04-04

申请号：US18538012

申请日：2023-12-13

Applicant: DENSO CORPORATION

Inventor： Masataka DEGUCHI ,  Junya MURAMATSU ,  Keita KATAOKA ,  Katsuhiro KUTSUKI ,  Isao AOYAGI ,  Takashi TOMINAGA ,  Ryosuke OKACHI ,  Takashi KOHYAMA

IPC: G01R31/26 ,  H01L29/78

CPC classification number: G01R31/2642 ,  G01R31/2623 ,  G01R31/2644 ,  H01L29/7815

Abstract: Main cells that constitute a semiconductor element having a trench gate structure include first cells, and second cells having a structure in which gate insulating films are more easily broken by energization than those in the first cells, and the number of which is smaller than that of the first cells. At a time of driving the semiconductor element, a common gate drive voltage is applied to gate electrodes of the first cells and the second cells. An electrical characteristic is measured to detect failure of the second cells due to energization at the time of driving. The gate electrodes of the failed second cells are electrically isolated from the gate electrodes of the first cells so that the gate drive voltage is not applied to the failed second cells. The failure of the first cells is predicted based on the failure of the second cells.

公开(公告)号：US20220278231A1

公开(公告)日：2022-09-01

申请号：US17747293

申请日：2022-05-18

Applicant: DENSO CORPORATION

Inventor： Jun SAITO ,  Youngshin EUM ,  Keita KATAOKA ,  Yusuke YAMASHITA ,  Yukihiko WATANABE ,  Katsuhiro KUTSUKI

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423

Abstract: A switching element includes a semiconductor substrate, a gate insulating film, and a gate electrode that is disposed inside the trench. The semiconductor substrate further includes: an n-type source region, a p-type body region, an n-type drift region, a p-type first electric field reduced region, and a p-type connection region. When a permittivity of the connection region is ε (F/cm), a critical electric field strength of the connection region is Ec (V/cm), an elementary charge is e (C), an area density of p-type impurity when viewed in a plan view of the connection region located below the trench is Q (cm−2), Q>ε*Ec/e.

公开(公告)号：US20220231164A1

公开(公告)日：2022-07-21

申请号：US17715381

申请日：2022-04-07

Applicant: DENSO CORPORATION

Inventor： Jun SAITO ,  Keita KATAOKA ,  Yusuke YAMASHITA ,  Yukihiko WATANABE ,  Katsuhiro KUTSUKI ,  Yasushi URAKAMI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10

Abstract: A switching element includes a semiconductor substrate having: an n-type drift region in contact with each of gate insulating films on a bottom surface and side surfaces of each of the trenches; a p-type body region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the n-type drift region; an n-type source region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the p-type body region, the n-type source region being separated away from the n-type drift region by the p-type body region; plurality of p-type bottom regions each of which is located under a corresponding one of the trenches and located away from a corresponding one of the gate insulating films; and a p-type connection region that connects the p-type bottom regions and the p-type body region.