公开(公告)号：US20170345919A1

公开(公告)日：2017-11-30

申请号：US15531015

申请日：2015-12-08

Applicant: DENSO CORPORATION

Inventor： Kazuhiro OYAMA ,  Yasushi HIGUCHI ,  Seigo OOSAWA ,  Masaki MATSUI ,  Youngshin EUM

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L29/778 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/786

Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.

公开(公告)号：US20180130873A1

公开(公告)日：2018-05-10

申请号：US15573200

申请日：2016-06-14

Applicant: DENSO CORPORATION

Inventor： Youngshin EUM ,  Kazuhiro OYAMA ,  Yasushi HIGUCHI ,  Shinichi HOSHI

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L29/06 ,  H01L29/0615 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/812

Abstract: In a semiconductor device, an AlGaN layer includes a first AlGaN layer and a second AlGaN layer. The second AlGaN layer is positioned between a gate structure portion and a drain electrode and is divided into multiple parts in an arrangement direction in which the gate structure portion and the drain electrode are arranged. A second Al mixed crystal ratio of the second AlGaN layer is less than a first Al mixed crystal ratio of the first AlGaN layer. Accordingly, the semiconductor device is a normally-off-type device and is capable of restricting a decrease of a breakdown voltage and an increase of an on-resistance.

公开(公告)号：US20180248026A1

公开(公告)日：2018-08-30

申请号：US15753342

申请日：2016-09-05

Applicant: DENSO CORPORATION

Inventor： Youngshin EUM ,  Kazuhiro OYAMA ,  Yasushi HIGUCHI ,  Yoshinori TSUCHIYA ,  Shinichi HOSHI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/812 ,  H01L29/06

Abstract: A semiconductor device includes a conductive substrate, a channel forming layer, a first electrode, and a second electrode. The channel forming layer is located above the conductive substrate and includes at least one hetero-junction structure. The hetero-junction structure includes a first GaN-type semiconductor layer providing a drift region and a second GaN-type semiconductor layer having a bandgap energy greater than the first GaN-type semiconductor layer. A total fixed charge quantity of charges in the first GaN-type layer and the second GaN-type layer is from 0.5×1013 to 1.5×1013 cm−2. The charges in the first GaN-type layer and the second GaN-type layer include charges generated by the polarization in the first GaN-type layer. Accordingly, the semiconductor device capable of improving a break-down voltage and decreasing an on-resistance is obtained.

公开(公告)号：US20220278231A1

公开(公告)日：2022-09-01

申请号：US17747293

申请日：2022-05-18

Applicant: DENSO CORPORATION

Inventor： Jun SAITO ,  Youngshin EUM ,  Keita KATAOKA ,  Yusuke YAMASHITA ,  Yukihiko WATANABE ,  Katsuhiro KUTSUKI

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423

Abstract: A switching element includes a semiconductor substrate, a gate insulating film, and a gate electrode that is disposed inside the trench. The semiconductor substrate further includes: an n-type source region, a p-type body region, an n-type drift region, a p-type first electric field reduced region, and a p-type connection region. When a permittivity of the connection region is ε (F/cm), a critical electric field strength of the connection region is Ec (V/cm), an elementary charge is e (C), an area density of p-type impurity when viewed in a plan view of the connection region located below the trench is Q (cm−2), Q>ε*Ec/e.

公开(公告)号：US20190123187A1

公开(公告)日：2019-04-25

申请号：US16092492

申请日：2017-04-06

Applicant: DENSO CORPORATION

Inventor： Hiroyuki TARUMI ,  Kazuhiro OYAMA ,  Youngshin EUM ,  Shinichi HOSHI

IPC: H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/20 ,  H01L29/205

Abstract: A semiconductor device has a lateral switching device that includes a channel forming layer, a gate structure portion, a source electrode, a drain electrode, a third semiconductor layer, a fourth semiconductor layer, and a junction gate electrode. The gate structure portion has a gate insulating film provided in a recess portion of the channel forming layer and a MOS gate electrode functioning as a gate electrode of a MOS structure provided on the gate insulating film. The source electrode and the junction gate electrode are coupled through an electrode layer provided on an interlayer insulating film covering the MOS gate electrode. An end of the third semiconductor layer facing the drain electrode protrudes toward the drain electrode from an end of the fourth semiconductor layer facing the drain electrode by a distance in a range of 1 μm to 5 μm both inclusive.