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公开(公告)号:US20170104479A1
公开(公告)日:2017-04-13
申请号:US15117487
申请日:2015-03-12
Applicant: DENSO CORPORATION
Inventor: Atsushi KANAMORI , Sadahiro AKAMA , Kiyoshi YAMAMOTO , Atsushi KOBAYASHI
CPC classification number: H03K17/14 , H03K17/165 , H03K17/168 , H03K17/28
Abstract: A drive device for controlling a power switching element to turn on and off includes: an on-side circuit performing an on operation of the power switching element; an off-side circuit performing an off operation of the power switching element; and a temperature detector detecting a temperature. At least one of the on-side and off-side circuits includes a current path for supplying or drawing a gate current of the power switching element and a switch circuit for switching the gate current. The switch circuit transitionally changes the gate current based on the temperature of the power switching element when the switching circuit switches the gate current.
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2.
公开(公告)号:US20170093392A1
公开(公告)日:2017-03-30
申请号:US15122438
申请日:2015-04-02
Applicant: DENSO CORPORATION
Inventor: Atsushi KOBAYASHI , Kiyoshi YAMAMOTO , Atsushi KANAMORI , Sadahiro AKAMA
IPC: H03K17/16 , H03K3/012 , H03K5/1534 , H03K17/28
CPC classification number: H03K17/162 , G11C29/023 , G11C29/028 , H03K3/012 , H03K5/1534 , H03K17/163 , H03K17/168 , H03K17/28 , H03K2005/00065 , H03K2005/00247 , H03K2005/00273
Abstract: A timing adjustment method for a drive circuit, including: a rise detector for a rise start when a voltage-driven semiconductor element is turned off; a timing signal output unit outputting a speed change timing signal after a set delay time has elapsed from the rise start; and a conduction controller for a conduction control terminal of the semiconductor element using the timing signal, comprises: defining an estimated terminal voltage of the conduction control terminal when a rise completion time elapses; increasing a delay time by a predetermined unit time, and changing the drive signal to a turning off level again, when the conduction control terminal doesn't fall below the estimated terminal voltage after the drive signal is changed to a turning off level before the level is inverted; and determining a delay time, when the conduction control terminal falls below the estimated terminal voltage initially, as a set value.
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公开(公告)号:US20160352316A1
公开(公告)日:2016-12-01
申请号:US15117512
申请日:2015-03-12
Applicant: DENSO CORPORATION
Inventor: Sadahiro AKAMA , Kiyoshi YAMAMOTO , Atsushi KOBAYASHI , Atsushi KANAMORI
IPC: H03K17/04 , H03K17/687 , G05F1/565 , H03K17/567
CPC classification number: H03K17/0406 , G05F1/565 , H03K17/167 , H03K17/567 , H03K17/6871
Abstract: A drive device for controlling a power switching element includes: an on-side circuit that performs an on operation of the power switching element; and an off-side circuit that performs an off operation of the power switching element. The on-side circuit or the off-side circuit includes: multiple main MOS transistors; a sense MOS transistor that define a drain current of each main MOS transistor; and a sense current control circuit that controls a drain current of the sense MOS transistor to be constant; and a switch circuit that is connected to the gate of each main MOS transistor, and controls each main MOS transistor to turn on and off so as to switch a gate current in the power switching element.
Abstract translation: 用于控制功率开关元件的驱动装置包括:进行功率开关元件的接通动作的接线电路; 以及执行电源开关元件的断开操作的断开侧电路。 旁路电路或旁路电路包括:多个主MOS晶体管; 限定每个主MOS晶体管的漏极电流的感测MOS晶体管; 以及感测电流控制电路,其将所述读出MOS晶体管的漏极电流控制为恒定; 以及连接到每个主MOS晶体管的栅极的开关电路,并且控制每个主MOS晶体管导通和截止以便切换功率开关元件中的栅极电流。
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