公开(公告)号：US10804237B2

公开(公告)日：2020-10-13

申请号：US16353525

申请日：2019-03-14

Applicant: DENSO CORPORATION

Inventor： Kazuhiko Sugiura ,  Tomohito Iwashige ,  Jun Kawai

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/367 ,  B22F1/00 ,  H01B1/22 ,  B22F7/06 ,  B22F7/08 ,  H01L21/52 ,  C22C1/05 ,  H01L23/051

Abstract: A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

公开(公告)号：US10763204B2

公开(公告)日：2020-09-01

申请号：US16284503

申请日：2019-02-25

Applicant: DENSO CORPORATION ,  C. Uyemura & Co., Ltd.

Inventor： Tomohito Iwashige ,  Kazuhiko Sugiura ,  Kazuhiro Miwa ,  Yuichi Sakuma ,  Seigo Kurosaka ,  Yukinori Oda

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes: a semiconductor element; a support as a metallic member that includes a metallized layer having a first component as an iron group element and a second component as a periodic table group five or group six transition metal element other than chromium provided at an outermost surface of the support, and is arranged such that the outermost surface faces the semiconductor element; a joint material that is arranged between the outermost surface of the support and the semiconductor element, and is joined with the outermost surface to fix the semiconductor element to the support; and a molding resin that is arranged to cover a joint body having the support, the joint material and the semiconductor element.

公开(公告)号：US11557563B2

公开(公告)日：2023-01-17

申请号：US16902584

申请日：2020-06-16

Applicant: DENSO CORPORATION

Inventor： Tomohito Iwashige ,  Katsuya Kumagai ,  Takeshi Endoh

IPC: H01L23/00

Abstract: A sintered member is provided between a semiconductor chip and a terminal. The sintered member is made of a sinter sheet by heating and pressing the same. The semiconductor chip is connected to the terminal via the sintered member. Convex portions are formed at a front-side surface of the semiconductor chip. Concave portions, each of which has such a shape corresponding to that of each convex portion of the semiconductor chip, are formed at a surface of the sintered member facing to the semiconductor chip.

公开(公告)号：US11101246B2

公开(公告)日：2021-08-24

申请号：US16823402

申请日：2020-03-19

Applicant: DENSO CORPORATION

Inventor： Tomohito Iwashige ,  Takeshi Endo ,  Kazuhiko Sugiura

IPC: H01L23/495 ,  H01L23/34 ,  H01L23/48 ,  H01L21/00 ,  H05K7/20 ,  H01L25/07 ,  H01L23/00 ,  H01L23/367 ,  H01L21/48 ,  H01L25/00 ,  H01L23/31

Abstract: In a semiconductor device, a first semiconductor chip and a second semiconductor chip are disposed between a first support member and a second support member. A first underlayer bonding material is disposed between the first semiconductor chip and the first support member. A second underlayer bonding material is disposed between the second semiconductor chip and the first support member. A first upper layer bonding material is disposed between the first semiconductor chip and the second support member. A second upper layer bonding material is disposed between the second semiconductor chip and the second support member.

公开(公告)号：US10943847B2

公开(公告)日：2021-03-09

申请号：US16216044

申请日：2018-12-11

Applicant: DENSO CORPORATION

Inventor： Kazuhiko Sugiura ,  Tomohito Iwashige ,  Jun Kawai

IPC: H01L23/373 ,  H01L23/62 ,  H01L29/739 ,  H01L23/40 ,  H01L29/78 ,  H01L23/58 ,  H01L23/36 ,  H01L25/18 ,  H01L25/07 ,  H01L29/12 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor chip having an electrode portion and a joining member electrically connected to the electrode portion to allow an electric current to flow in the semiconductor chip through the joining member. The joining member contains a protective material that has a positive temperature coefficient of resistivity, and the positive temperature coefficient of resistivity has a larger value in a temperature range higher than a threshold temperature than in a temperature range lower than the threshold temperature, the threshold temperature being a predetermined temperature lower than a breakdown temperature of the semiconductor chip. The electrode portion of the semiconductor chip may contain the protective material.

公开(公告)号：US09536802B2

公开(公告)日：2017-01-03

申请号：US14913712

申请日：2014-08-21

Applicant: DENSO CORPORATION

Inventor： Tomohito Iwashige

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/29 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872 ,  H01L23/00

CPC classification number: H01L23/3142 ,  H01L23/29 ,  H01L23/293 ,  H01L23/31 ,  H01L23/3107 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/33 ,  H01L24/73 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/872 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a semiconductor chip, a resin mold portion sealing a component in which the semiconductor chip is included, and a bonding layer disposed between the resin mold portion and the component. The bonding layer is made of an organic resin that is disposed at an obverse side of the component, and includes a first layer bonded to the component and a second layer bonded to the resin mold portion. A loss coefficient tan δ of the first layer is smaller than a loss coefficient tan δ of the second layer within a temperature range of 200° C. to 250° C.

Abstract translation: 半导体器件包括半导体芯片，密封其中包含半导体芯片的部件的树脂模制部分和设置在树脂模具部分和部件之间的粘合层。 接合层由设置在该部件的正面的有机树脂制成，并且包括与该部件接合的第一层和与树脂模具部分接合的第二层。 第一层的损耗系数tanδ小于在200℃至250℃的温度范围内的第二层的损耗系数tanδ。