公开(公告)号：US20190386599A1

公开(公告)日：2019-12-19

申请号：US16442606

申请日：2019-06-17

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yoshimitsu TAKAHASHI ,  Masahito FUJIEDA ,  Tetsuya YAMADA ,  Ryuji OMATA ,  Kiyotaka MATSUBARA ,  Makoto NAKAMURA ,  Daigo NOBE

IPC分类号： H02P27/06 ,  H02P7/291 ,  H02M5/32

摘要： A drive system for an electric motor includes a first inverter that includes first switching elements, a second inverter that includes second switching elements, and a control unit that includes a first inverter control calculation section controlling on-off operation of each of the first switching elements based on a first carrier wave and a first modulation wave, a second inverter control calculation section controlling on-off operation of each of the second switching elements based on a second carrier wave and a second modulation wave, and a control synchronization section synchronizing the first carrier wave with the second carrier wave. When a sum of voltages of the first voltage source and the second voltage source is more than a voltage determination threshold, and torque of a rotating electric machine is smaller than a torque determination threshold, the control synchronization section synchronizes the first carrier wave with the second carrier wave.

公开(公告)号：US20180182883A1

公开(公告)日：2018-06-28

申请号：US15833938

申请日：2017-12-06

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Tetsuya YAMADA ,  Takashi OKAWA ,  Tomohiko MORI ,  Hiroyuki UEDA

IPC分类号： H01L29/78 ,  H01L29/20 ,  H01L29/10 ,  H01L29/06 ,  H01L23/535 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L21/265 ,  H01L21/768 ,  H01L29/66

CPC分类号： H01L29/7802 ,  H01L21/0254 ,  H01L21/26546 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/308 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/535 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66522 ,  H01L29/66712 ,  H01L29/7395

摘要： A switching element includes a semiconductor substrate that includes a first n-type semiconductor layer, a p-type body layer constituted by an epitaxial layer, and a second n-type semiconductor layer separated from the first n-type semiconductor layer by the body layer, a gate insulating film that covers a range across the surface of the first n-type semiconductor layer, the surface of the body layer, and the surface of the second n-type semiconductor layer, and a gate electrode that faces the body layer through the gate insulating film. An interface between the first n-type semiconductor layer and the body layer includes an inclined surface. The inclined surface is inclined such that the depth of the body layer increases as a distance from an end of the body layer increases in a horizontal direction. The inclined surface is disposed below the gate electrode.

公开(公告)号：US20170278741A1

公开(公告)日：2017-09-28

申请号：US15459404

申请日：2017-03-15

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA ,  SUMCO CORPORATION

发明人： Tetsuya YAMADA ,  Hiromichi KINPARA ,  Shinjirou UCHIDA ,  Masamitsu FUKUDA

IPC分类号： H01L21/762 ,  H01L21/266 ,  H01L21/324 ,  H01L21/265

CPC分类号： H01L21/76243 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/324 ,  H01L21/761 ,  H01L21/7624

摘要： A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.

公开(公告)号：US20180182621A1

公开(公告)日：2018-06-28

申请号：US15842249

申请日：2017-12-14

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Tetsuya YAMADA ,  Hiroyuki UEDA ,  Tomohiko MORI

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L21/02579 ,  H01L21/02458 ,  H01L21/2056 ,  H01L21/8252 ,  H01L29/2003 ,  H01L29/6634 ,  H01L29/66522 ,  H01L29/66666 ,  H01L29/7395 ,  H01L29/7802

摘要： A method of manufacturing a switching element includes forming a recessed portion in a surface of a GaN semiconductor substrate in which a first n-type semiconductor layer is exposed on the surface, growing a p-type body layer within the recessed portion and on the surface of the GaN semiconductor substrate, removing a surface layer portion of the body layer to expose the first n-type semiconductor layer on the surface of the GaN semiconductor substrate, and leave the body layer within the recessed portion, forming a second n-type semiconductor layer which is separated from the first n-type semiconductor layer by the body layer and is exposed on the surface of the GaN semiconductor substrate, and forming a gate electrode which faces the body layer through an insulating film.