公开(公告)号：US20120013316A1

公开(公告)日：2012-01-19

申请号：US13053517

申请日：2011-03-22

申请人： Kazutoshi Nakamura ,  Daisuke Minohara

发明人： Kazutoshi Nakamura ,  Daisuke Minohara

IPC分类号： G05F1/00

CPC分类号： H02M3/00 ,  H01L23/50 ,  H01L23/64 ,  H01L24/14 ,  H01L24/17 ,  H01L27/0617 ,  H01L2224/14134 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

摘要： According to one embodiment, a DC-DC converter includes a mounting substrate and a semiconductor device. The semiconductor device includes a first switch element, a second switch element, a first interconnect layer receiving an input potential, a second interconnect layer connected with an inductor, a third interconnect layer receiving a reference potential, and a fourth interconnect layer connected with the inductor. These layers are disposed side by side in one direction on one layer. The mounting substrate includes a fifth interconnect pattern receiving an input potential and disposed adjacently on one side of a mounting region of the semiconductor device, a sixth interconnect pattern receiving a reference voltage and disposed adjacently on the one side of the mounting region, and a seventh interconnect pattern disposed adjacently on one other side opposite to the one side of the mounting region.

摘要翻译： 根据一个实施例，DC-DC转换器包括安装基板和半导体器件。 半导体器件包括第一开关元件，第二开关元件，接收输入电位的第一互连层，与电感器连接的第二互连层，接收参考电位的第三互连层，以及与电感器连接的第四互连层 。 这些层在一个层上沿一个方向并排布置。 安装基板包括接收输入电位并相邻地设置在半导体器件的安装区域的一侧上的第五布线图案，接收参考电压并相邻布置在安装区域的一侧上的第六布线图案，以及第七布线图案 互连图案相邻设置在与安装区域的一侧相对的另一侧上。

公开(公告)号：US20110109287A1

公开(公告)日：2011-05-12

申请号：US12886898

申请日：2010-09-21

申请人： Kazutoshi Nakamura ,  Daisuke Minohara

发明人： Kazutoshi Nakamura ,  Daisuke Minohara

IPC分类号： G05F1/10 ,  H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/49524 ,  H01L23/49575 ,  H01L24/16 ,  H01L24/40 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： According to one embodiment, a semiconductor package includes a chip, a plurality of bumps, a source frame, a drain frame, and a mold member. The chip has a lateral transistor formed inside the chip and has a top source electrode exposed on a first surface of the chip and a top drain electrode exposed on the first surface of the chip. The plurality of bumps are mounted on each of the top source electrode and the top drain electrode. The source frame is connected to the top source electrode through the bumps. The drain frame is connected to the top drain electrode through the bumps. The mold member embeds at least a part of each of the chip, the bumps, the source frame and the drain frame.

摘要翻译： 根据一个实施例，半导体封装包括芯片，多个凸块，源框架，排水框架和模具构件。 芯片具有形成在芯片内部的横向晶体管，并且具有暴露在芯片的第一表面上的顶部源电极和暴露在芯片的第一表面上的顶部漏电极。 多个凸块安装在顶部源电极和顶部漏电极中的每一个上。 源框架通过凸块连接到顶部源极电极。 漏极框架通过凸块连接到顶部漏极电极。 模具构件嵌入芯片，凸块，源框架和排水框架中的每一个的至少一部分。

公开(公告)号：US08110924B2

公开(公告)日：2012-02-07

申请号：US12408390

申请日：2009-03-20

申请人： Kazutoshi Nakamura ,  Norio Yasuhara ,  Tomoko Matsudai ,  Daisuke Minohara

发明人： Kazutoshi Nakamura ,  Norio Yasuhara ,  Tomoko Matsudai ,  Daisuke Minohara

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/585 ,  H01L23/522 ,  H01L23/552 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/1132 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/1411 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00

摘要： In a DC-DC converter, a multilayer wiring layer is provided on a silicon substrate, and a control circuit configured to control an input circuit and an output circuit is formed in the silicon substrate and the multilayer wiring layer. Moreover, a sealing resin layer covering the multilayer wiring layer and a connecting member connected to an uppermost wiring of the multilayer wiring layer, penetrating the sealing resin layer and having an upper end portion protruding from an upper surface of the sealing resin layer are provided. The upper end portion of the connecting member is formed from a protruding electrode. Horizontal cross-sectional area of the connecting member connected to terminals of the output circuit is larger than horizontal cross-sectional area of the connecting member connected to terminals of the control circuit.

摘要翻译： 在DC-DC转换器中，在硅衬底上设置多层布线层，并且在硅衬底和多层布线层中形成控制输入电路和输出电路的控制电路。 此外，设置覆盖多层布线层的密封树脂层和连接到多层布线层的最上布线的连接构件，其穿透密封树脂层并具有从密封树脂层的上表面突出的上端部。 连接构件的上端部由突出电极形成。 与输出电路的端子连接的连接构件的水平横截面面积大于与控制电路的端子连接的连接构件的水平截面积。

公开(公告)号：US20110109295A1

公开(公告)日：2011-05-12

申请号：US12886902

申请日：2010-09-21

申请人： Daisuke Minohara ,  Kazutoshi Nakamura

发明人： Daisuke Minohara ,  Kazutoshi Nakamura

IPC分类号： G05F3/08

CPC分类号： H02M1/088

摘要： According to one embodiment, a semiconductor device includes a first switching element and a second switching element. The first switching element has a first threshold voltage and a first gate electrode connected to a first gate wiring. The second switching element has a second threshold voltage and a second gate electrode connected to a second gate wiring. The second threshold voltage has a larger absolute value than the first threshold voltage. The second gate wiring has a larger resistance per unit length than the first gate wiring.

摘要翻译： 根据一个实施例，半导体器件包括第一开关元件和第二开关元件。 第一开关元件具有第一阈值电压和连接到第一栅极布线的第一栅电极。 第二开关元件具有第二阈值电压和连接到第二栅极布线的第二栅电极。 第二阈值电压具有比第一阈值电压更大的绝对值。 第二栅极布线具有比第一栅极布线更大的每单位长度的电阻。

公开(公告)号：US06406800B1

公开(公告)日：2002-06-18

申请号：US09521665

申请日：2000-03-08

申请人： Makoto Ozaki ,  Daisuke Minohara

发明人： Makoto Ozaki ,  Daisuke Minohara

IPC分类号： B32B1518

CPC分类号： B22D11/0405 ,  Y10S164/03 ,  Y10S428/926 ,  Y10T428/12958 ,  Y10T428/12972

摘要： A bent pipe for use in piping arrangement for transporting materials conaining solids, the bent pipe being prepared by subjecting to high-frequency bending work a straight blank pipe prepared by centrifugal casting and having a plurality of layers. The straight blank pipe comprises an outer layer made of a steel having high weldability, and an inner layer made of a high Cr cast iron containing at least Cr in an amount of 10 to 35 wt. % and having high wear resistance, the outer layer and the inner layer being metallurgically joined. Preferably, a barrier layer is provided between the outer layer and the inner layer for preventing an alloy component in each of the layers from diffusing into the other layer. The barrier layer is preferably about 10 to about 100 &mgr;m in thickness.

摘要翻译： 一种用于输送固体物质的管道装置的弯曲管道，该弯管通过高频弯曲加工制成，该直管坯通过离心铸造制备并具有多层。 直坯管包括由具有高焊接性的钢制成的外层，以及由至少含有10〜35重量％的Cr的高Cr铸铁制成的内层。 ％且具有高耐磨性，外层和内层冶金接合。 优选地，在外层和内层之间设置阻挡层，以防止每层中的合金组分扩散到另一层中。 阻挡层的厚度优选为约10至约100μm。