公开(公告)号：US20050236377A1

公开(公告)日：2005-10-27

申请号：US11105307

申请日：2005-04-12

申请人： Daniel Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas Buchberger ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert Hagen ,  Matthew Miller

发明人： Daniel Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas Buchberger ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert Hagen ,  Matthew Miller

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B23K9/00

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

公开(公告)号：US20070023145A1

公开(公告)日：2007-02-01

申请号：US11531479

申请日：2006-09-13

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

IPC分类号： C23F1/00

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

摘要翻译： 本发明的实施方案一般涉及等离子体反应器。 在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。 导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。 台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。 内壁与上外壁和下外壁相对设置。 在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

公开(公告)号：US20060193102A1

公开(公告)日：2006-08-31

申请号：US11381399

申请日：2006-05-03

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

IPC分类号： H01T23/00

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

摘要翻译： 本发明的实施例一般涉及在等离子体处理室中使用的环形环。 在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。 台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。 环形环可以由诸如碳化硅和铝的导电材料制成。

公开(公告)号：US20060172542A1

公开(公告)日：2006-08-03

申请号：US11046135

申请日：2005-01-28

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

IPC分类号： H01L21/302 ,  C23F1/00 ,  H01L21/461

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.

摘要翻译： 本发明的实施例一般涉及在等离子体处理室中的处理区域内限制等离子体的方法和装置。 该装置可以包括环形环，其具有在室壁之间的间隔距离在约0.8英寸至约1.5英寸之间。 除了环形等离子体限制环之外，等离子体还可以通过在等离子体处理期间通过降低施加到顶部电极的电压比例的电压来提供约束，并且在衬底支撑件处以负相位提供提供给顶部电极的剩余电压， 如果衬底在加工过程中存在的话。 可以通过改变衬底支撑件和围绕顶部电极的电介质密封件的阻抗来调节电压比。 通过电压比降低顶部电极电压并且在衬底支架处以负相位提供提供给顶部电极的剩余电压减少了被吸引到接地室壁的等离子体的量，从而改善了等离子体约束。 这种等离子体约束的方法被称为阻抗限制。 通过使用所描述的环形环，阻抗约束方案或两者的组合可以改善等离子体约束。

公开(公告)号：US20070091540A1

公开(公告)日：2007-04-26

申请号：US11409184

申请日：2006-04-21

申请人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes inner and outer zone evaporators inside respective inner and outer zones of the electrostatic chuck, while pressurizing inner and outer zones of a workpiece-to-chuck interface with a thermally conductive gas, and sensing conditions in the chamber including inner and outer zone temperatures near the workpiece. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using thermal modeling to estimate respective changes in thermal conditions of the coolant in the inner and outer zone evaporators, respectively, that would hold temperatures measured in the inner and outer electrostatic chuck zones, respectively, nearly constant by compensating for the next scheduled change in RF heat load, and making the respective changes in thermal conditions of the coolant in inner and outer zone evaporators prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.

摘要翻译： 一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过制冷回路，所述制冷回路在静电吸盘的内部和外部区域内包括内部和外部区域蒸发器 同时用导热气体对工件 - 卡盘界面的内部和外部区域加压，以及感测室中包括工件附近的内部和外部区域温度的条件。 该方法还包括获得工件上的RF热负荷的下一个预定的改变，并且使用热模型来分别估计在内部和外部区域蒸发器中的冷却剂的热条件的各自变化，其将保持在内部和外部测量的温度 通过补偿下一个预定的RF热负荷变化，分别使静电吸盘区域几乎恒定，并且在下一次预定的改变时间之前通过头部开始使得内部和外部区域蒸发器中的冷却剂的热条件的各自变化 与通过静电卡盘的热传播延迟有关。

公开(公告)号：US20070091538A1

公开(公告)日：2007-04-26

申请号：US11408567

申请日：2006-04-21

申请人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.

摘要翻译： 具有反应室和具有用于将工件保持在腔室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于将选定压力下的导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，并且蒸发器位于静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电吸盘中的温度传感器，能够模拟蒸发器和表面之间的热传递的热模型，其基于来自温度传感器和耦合到热模型的敏捷控制处理器的测量，并控制背侧气体压力源 响应于来自所选压力的变化模型的预测，其将使由传感器测量的温度更接近所需温度。

公开(公告)号：US20070091537A1

公开(公告)日：2007-04-26

申请号：US11408558

申请日：2006-04-21

申请人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.

摘要翻译： 在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度 定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。 该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力 从热模型。

公开(公告)号：US20070089834A1

公开(公告)日：2007-04-26

申请号：US11408559

申请日：2006-04-21

申请人： Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和外部膨胀阀的制冷回路，用于控制冷却剂通过内部 和外部蒸发器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

公开(公告)号：US20060043065A1

公开(公告)日：2006-03-02

申请号：US10929104

申请日：2004-08-26

申请人： Douglas Buchberger ,  Daniel Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth Collins ,  Amir Al-Bayati

发明人： Douglas Buchberger ,  Daniel Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth Collins ,  Amir Al-Bayati

IPC分类号： B44C1/22

CPC分类号： H01L21/67109 ,  H01L21/6831

摘要： A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

公开(公告)号：US20070097580A1

公开(公告)日：2007-05-03

申请号：US11410782

申请日：2006-04-24

申请人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H02H5/04

CPC分类号： H01L21/67109

摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.

摘要翻译： 在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂， 工件支撑件的内部流动通道构成制冷回路的蒸发器。 该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。