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公开(公告)号：US08607731B2
公开(公告)日：2013-12-17
申请号：US12144463
申请日：2008-06-23
CPC分类号： H01L21/6833
摘要： An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.
摘要翻译： 用于在衬底的周边边缘上产生均匀等离子体的装置具有电介质体，其具有嵌入其中的上电极和环形电极。 上电极的外周与环形电极的内周重叠。 在一个实施例中，上电极和环形电极通过钼通孔电耦合。 在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。 在一个实施例中，上电极耦合到RF源，用于将一个或多个处理气体激发成用于衬底处理的等离子体。
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公开(公告)号：US20090314433A1
公开(公告)日：2009-12-24
申请号：US12144463
申请日：2008-06-23
IPC分类号： C23F1/00 , H01L21/683
CPC分类号： H01L21/6833
摘要： An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.
摘要翻译： 用于在衬底的周边边缘上产生均匀等离子体的装置具有电介质体，其具有嵌入其中的上电极和环形电极。 上电极的外周与环形电极的内周重叠。 在一个实施例中，上电极和环形电极通过钼通孔电耦合。 在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。 在一个实施例中，上电极耦合到RF源，用于将一个或多个处理气体激发成用于衬底处理的等离子体。
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公开(公告)号：US07768765B2
公开(公告)日：2010-08-03
申请号：US11683994
申请日：2007-03-08
申请人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
发明人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC分类号： H01T23/00
CPC分类号： H01L21/67109
摘要： A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.
摘要翻译： 用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。 流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。 在一个版本中，频道翻倍翻转自己。
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公开(公告)号：US07221553B2
公开(公告)日：2007-05-22
申请号：US10421473
申请日：2003-04-22
申请人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
发明人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC分类号： H05F3/00
CPC分类号： H01L21/67109
摘要： A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.
摘要翻译： 用于衬底处理室的支撑件具有通过周边侧壁连接以限定储存器的上壁和下壁。 流体入口将传热流体供应到储存器。 在一个版本中，多个突起延伸到储存器中以扰乱通过储存器的传热流体的流动。 在另一个版本中，储存器是具有（i）蛇形循环中的一个或多个的细长通道，（ii）延伸到通道中的整体翅片，（iii）粗糙化的内表面，或（iv）变化的横截面。 流体出口从储存器排出传热流体。
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公开(公告)号：US06490146B2
公开(公告)日：2002-12-03
申请号：US09929806
申请日：2001-08-13
申请人： You Wang , Shamouil Shamouilian , Arnold Kholodenko , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
发明人： You Wang , Shamouil Shamouilian , Arnold Kholodenko , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
IPC分类号： H01G2300
CPC分类号： C04B37/026 , C04B37/006 , C04B37/021 , C04B2237/121 , C04B2237/122 , C04B2237/123 , C04B2237/124 , C04B2237/341 , C04B2237/343 , C04B2237/348 , C04B2237/36 , C04B2237/365 , C04B2237/366 , C04B2237/368 , C04B2237/401 , C04B2237/402 , C04B2237/403 , C04B2237/406 , C04B2237/407 , C04B2237/61 , C04B2237/62 , C04B2237/64 , C04B2237/74 , H01L21/6831 , H01L21/6833
摘要： An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.
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公开(公告)号：US06462928B1
公开(公告)日：2002-10-08
申请号：US09306944
申请日：1999-05-07
申请人： Shamouil Shamouilian , You Wang , Surinder S. Bedi , Arnold Kholodenko , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
发明人： Shamouil Shamouilian , You Wang , Surinder S. Bedi , Arnold Kholodenko , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
IPC分类号： H02N1300
CPC分类号： H02N13/00 , H01L21/6833
摘要： An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.
摘要翻译： 静电卡盘55包括电连接器140，电连接器140连接到电极105以将电荷引导到电极105.电连接器140包括具有至少约1500℃的熔化温度的难熔金属，例如用于 例如钨，钛，镍，钽，钼或其合金。 优选地，电连接器140通过软化温度小于约600℃的金属（例如铝，铟或低熔点合金）结合到电极105。
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公开(公告)号：US07479464B2
公开(公告)日：2009-01-20
申请号：US11552013
申请日：2006-10-23
申请人： Jennifer Y. Sun , Elmira Ryabova , Senh Thach , Xi Zhu , Semyon L. Kats
发明人： Jennifer Y. Sun , Elmira Ryabova , Senh Thach , Xi Zhu , Semyon L. Kats
IPC分类号： H01L21/31
CPC分类号： C23C24/04 , C23C14/564 , C23C16/4404
摘要： Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.
摘要翻译： 本发明的实施例提供了一种在半导体室部件/部件上的等离子体电阻层的低温气溶胶沉积的方法。 在一个实施方案中，用于低温气溶胶沉积的方法包括在气溶胶发生器中形成细颗粒气溶胶，将气溶胶发生器中的气溶胶分配到处理室中朝向基板的表面，将基板温度维持在约0度 摄氏度和50摄氏度，并且在基底表面上从气溶胶中的材料沉积一层。
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公开(公告)号：US6108189A
公开(公告)日：2000-08-22
申请号：US965690
申请日：1997-11-06
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , H02N13/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.
摘要翻译： 用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。 包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。 优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。 还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。
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9.发明申请公开(公告)号：US20100081284A1
公开(公告)日：2010-04-01
申请号：US12240090
申请日：2008-09-29
IPC分类号： H01L21/3065 , C23F1/08 , C23C16/00
CPC分类号： H01J37/32449 , C23C16/45591 , C23C16/4585 , H01J37/321 , H01J37/3244
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber.
摘要翻译： 本文提供了处理衬底的方法和装置。 在一些实施例中，用于处理衬底的装置包括流量均衡器，其被配置为控制处理室的处理容积和排气口之间的气体流。 流量均衡器包括至少一个限制器板，其被配置为设置在接近要处理的基板的表面的平面中，并且限定了至少一个限制器板的边缘与腔室壁中的一个之间的方位不均匀的间隙 或安装在处理室中时的基板支撑件。
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公开(公告)号：US06538872B1
公开(公告)日：2003-03-25
申请号：US09307214
申请日：2001-11-05
申请人： You Wang , Shamouil Shamouilian , Arnold Kholodenko , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
发明人： You Wang , Shamouil Shamouilian , Arnold Kholodenko , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
IPC分类号： H01G2300
CPC分类号： H01L21/6833 , H01L21/67103
摘要： An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.
摘要翻译： 用于保持基板30的静电卡盘55包括由覆盖电极105的电介质115制成的静电构件100，电极105可充电以静电保持基板30.包括加热器235的基座175与静电构件100接合。 基底可以由复合材料制成，例如渗透有金属的多孔陶瓷，并且可以通过接合层与静电部件接合。
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