公开(公告)号：US07826072B1

公开(公告)日：2010-11-02

申请号：US11999814

申请日：2007-12-06

申请人： Daniel C. Wack ,  Andrei Veldman ,  Edward R. Ratner ,  John Hench ,  Noah Bareket

发明人： Daniel C. Wack ,  Andrei Veldman ,  Edward R. Ratner ,  John Hench ,  Noah Bareket

IPC分类号： G01B11/14 ,  G06F19/00

CPC分类号： G01B11/0625 ,  G01B11/24 ,  G01B2210/56

摘要： The present application discloses a method of model-based measurement of semiconductor device features using a scatterometer system. The method includes at least the following steps. A cost function is defined depending upon a plurality of variable parameters of the scatterometer system and upon a plurality of variable parameters for computer-implemented modeling to determine measurement results. Constraints are established for the plurality of variable parameters of the scatterometer system and for the plurality of variable parameters for the computer-implemented modeling. A computer-implemented optimization procedure is performed to determine an optimized global set of parameters, including both the variable parameters of the scatterometer system and the variable parameters for the computer-implemented modeling, which result in a minimal value of the cost function. Finally, the optimized global set of parameters is applied to configure the scatterometer system and the computer-implemented modeling. Other embodiments, features and aspects are also disclosed herein.

摘要翻译： 本申请公开了使用散射仪系统的基于模型的半导体器件特征的测量方法。 该方法至少包括以下步骤。 根据散射仪系统的多个可变参数以及多个用于计算机实现的建模的可变参数来确定测量结果来定义成本函数。 为散射仪系统的多个可变参数和计算机实现的建模的多个可变参数建立约束。 执行计算机实现的优化过程以确定优化的全局参数集合，包括散射仪系统的可变参数和用于计算机实现的建模的可变参数，其导致成本函数的最小值。 最后，应用优化的全局参数集来配置散射仪系统和计算机实现的建模。 本文还公开了其它实施例，特征和方面。

公开(公告)号：US07716003B1

公开(公告)日：2010-05-11

申请号：US11879227

申请日：2007-07-16

申请人： Daniel C. Wack ,  Andrei Veldman ,  Edward R. Ratner ,  John Hench ,  Noah Bareket

发明人： Daniel C. Wack ,  Andrei Veldman ,  Edward R. Ratner ,  John Hench ,  Noah Bareket

IPC分类号： G01R27/28

CPC分类号： G01N21/4788 ,  G01N21/956

摘要： The present application discloses a new technique which reduces the dimensionality of a feature model by re-use of data that has been obtained by a prior measurement. The data re-used from the prior measurement may range from parameters, such as geometrical dimensions, to more complex data that describe the electromagnetic scattering function of an underlying layer (for example, a local solution of the electric field properties).

摘要翻译： 本申请公开了一种通过重新使用通过先前测量获得的数据来降低特征模型的维度的新技术。 从先前测量重新使用的数据可以从诸如几何尺寸的参数到描述下层的电磁散射函数的更复杂的数据（例如，电场性质的局部解）。

公开(公告)号：US20090135416A1

公开(公告)日：2009-05-28

申请号：US11868740

申请日：2007-10-08

申请人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

发明人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

IPC分类号： G01B11/28 ,  G01J3/00 ,  G01B11/00

CPC分类号： G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：US20090190141A1

公开(公告)日：2009-07-30

申请号：US12419158

申请日：2009-04-06

申请人： Noah Bareket ,  Daniel C. Wack ,  Guoheng Zhao

发明人： Noah Bareket ,  Daniel C. Wack ,  Guoheng Zhao

IPC分类号： G01B11/06

CPC分类号： G01N21/211 ,  G01N21/8422 ,  G01N2021/213

摘要： To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

摘要翻译： 为了测量膜的一维或二维衍射结构的临界尺寸和其它参数，可以通过首先进行薄膜厚度的测量来简化计算，使用不改变临界尺寸的膜模型 或与结构的其他特征相关的参数。 可以使用膜模型来充分准确地估计膜的厚度，使得可以采用这种估计来简化用于导出临界尺寸和与二维衍射结构相关的其它参数的结构模型。

公开(公告)号：US07826071B2

公开(公告)日：2010-11-02

申请号：US11868740

申请日：2007-10-08

申请人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

发明人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

IPC分类号： G01B11/14

CPC分类号： G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：US07515253B2

公开(公告)日：2009-04-07

申请号：US11329500

申请日：2006-01-10

申请人： Noah Bareket ,  Daniel C. Wack ,  Guoheng Zhao

发明人： Noah Bareket ,  Daniel C. Wack ,  Guoheng Zhao

IPC分类号： G01B11/02

CPC分类号： G01N21/211 ,  G01N21/8422 ,  G01N2021/213

摘要： To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

摘要翻译： 为了测量膜的一维或二维衍射结构的临界尺寸和其它参数，可以通过首先进行薄膜厚度的测量来简化计算，使用不改变临界尺寸的膜模型 或与结构的其他特征相关的参数。 可以使用膜模型来充分准确地估计膜的厚度，使得可以采用这种估计来简化用于导出临界尺寸和与二维衍射结构相关的其它参数的结构模型。

公开(公告)号：US07280230B2

公开(公告)日：2007-10-09

申请号：US10327466

申请日：2002-12-19

申请人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

发明人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

IPC分类号： G01B11/28

CPC分类号： G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 不同的辐射参数，例如反射率R S，R P和椭偏参数可用于测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：US07933016B2

公开(公告)日：2011-04-26

申请号：US12641663

申请日：2009-12-18

申请人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanevsky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher F. Bevis ,  John Fielden ,  Noah Bareket ,  Kenneth P. Gross ,  Piotr Zalicki ,  Dan Wack ,  Paola Dececco ,  Thaddeus G. Dziura ,  Mark Ghinovker

发明人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanevsky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher F. Bevis ,  John Fielden ,  Noah Bareket ,  Kenneth P. Gross ,  Piotr Zalicki ,  Dan Wack ,  Paola Dececco ,  Thaddeus G. Dziura ,  Mark Ghinovker

IPC分类号： G01B11/00

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

摘要翻译： 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 提供多个目标。 每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。 用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。 使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度 （ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii） 使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。

公开(公告)号：US20080094630A1

公开(公告)日：2008-04-24

申请号：US11963730

申请日：2007-12-21

申请人： Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher Bevis ,  John Fielden ,  Noah Bareket ,  Kenneth Gross ,  Piotr Zalicki ,  Dan Wack ,  Paola Dececco ,  Thaddeus Dziura ,  Mark Ghinovker

发明人： Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher Bevis ,  John Fielden ,  Noah Bareket ,  Kenneth Gross ,  Piotr Zalicki ,  Dan Wack ,  Paola Dececco ,  Thaddeus Dziura ,  Mark Ghinovker

IPC分类号： G01B11/00 ,  G01N21/55 ,  G01B9/02

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

摘要翻译： 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。 提供了各自包括第一和第二结构的一部分的目标A，B，C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。 目标A，B，C和D用电磁辐射照射，以获得光谱S A，B，C，S和S， 分别来自目标A，B，C和D的SUB> D

公开(公告)号：US07102749B2

公开(公告)日：2006-09-05

申请号：US11101736

申请日：2005-04-07

申请人： Noah Bareket

发明人： Noah Bareket

IPC分类号： G01B11/00

CPC分类号： G03F7/70633

摘要： A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The first and second sections of each test set is positioned proximate to the second and first sections of the next test set, respectively. This mark allows two beams which scan the mark to travel over both a test section formed on one layer of the device and a test section formed on the other of the two layers. Scanning multiple test sets provides multiple registration error values which are then averaged to obtain an average registration error value. Another aspect of the present invention is directed towards a method for measuring the relative position between two layers of a device. The method begins by providing a mark as described above. A beam is scanned in a first path across the mark. A beam is then scanned in a second path across the mark. Signals are generated with respect to the portion of each beam which reflects off the surface of the device so that the registration error between the two layers may be calculated.