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公开(公告)号：US07831123B2
公开(公告)日：2010-11-09
申请号：US11899234
申请日：2007-09-05
IPC分类号： G02B6/10
CPC分类号： G02B6/132 , G02B6/122 , G02B6/1223 , G02B2006/12097 , G02B2006/121 , G02B2006/12169 , G02B2006/12176
摘要： The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.
摘要翻译： 本发明提供一种具有波导芯的波导，波导芯具有纵向侧壁表面，纵向顶表面和设置在基底上的纵向底表面。 界面层设置在波导芯的至少一个纵向侧壁表面上。 至少在波导芯侧壁和顶表面上，在界面层上设置波导覆层。 本发明的波导可以通过在基板上形成波导管下封层，然后在下封层上形成波导芯来制造。 然后在波导芯的至少纵向侧壁表面上形成界面层，并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。
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公开(公告)号：US20080253728A1
公开(公告)日：2008-10-16
申请号：US11899234
申请日：2007-09-05
IPC分类号： G02B6/10 , C03B37/022
CPC分类号： G02B6/132 , G02B6/122 , G02B6/1223 , G02B2006/12097 , G02B2006/121 , G02B2006/12169 , G02B2006/12176
摘要： The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.
摘要翻译： 本发明提供一种具有波导芯的波导，波导芯具有纵向侧壁表面，纵向顶表面和设置在基底上的纵向底表面。 界面层设置在波导芯的至少一个纵向侧壁表面上。 至少在波导芯侧壁和顶表面上，在界面层上设置波导覆层。 本发明的波导可以通过在基板上形成波导管下封层，然后在下封层上形成波导芯来制造。 然后在波导芯的至少纵向侧壁表面上形成界面层，并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。
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公开(公告)号：US07336684B2
公开(公告)日：2008-02-26
申请号：US10902612
申请日：2004-07-29
CPC分类号： H01S3/0632 , H01S3/005 , H01S3/0637 , H01S3/083 , H01S3/094 , H01S3/094061 , H01S3/0941 , H01S3/1608 , H01S3/2383 , H01S3/2391
摘要： A microphotonic light source includes an optical pump and a plurality of waveguides that distribute optical pump power of the optical pump. At least one Erbium-doped laser ring is coupled to at least one of the waveguides so as to match the resonance condition of the optical pump.
摘要翻译： 微电子光源包括光泵和分配光泵的光泵功率的多个波导。 至少一个铒掺杂激光环耦合到至少一个波导，以便匹配光泵的共振条件。
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公开(公告)号：US07787176B2
公开(公告)日：2010-08-31
申请号：US10234785
申请日：2002-09-04
CPC分类号： H01S5/50 , H01S5/026 , H01S5/10 , H01S5/101 , H01S5/1032 , H01S5/1046 , H01S5/30
摘要： An on-chip amplifier includes first element that curtails the velocity of an incoming light to the amplifier. A second element is doped so as to make the frequency of the incoming light equal to the electron frequency in order to allow for electron-photon wave interaction, so that when current flows through the amplifier, electron power is transferred to the incoming light, resulting in amplification of the incoming light.
摘要翻译： 片上放大器包括第一元件，其将入射光的速度限制到放大器。 掺杂第二元素以使入射光的频率等于电子频率，以便允许电子 - 光子波相互作用，使得当电流流过放大器时，电子功率被转移到入射光，导致 放大入射光。
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5.发明授权公开(公告)号：US07123805B2
公开(公告)日：2006-10-17
申请号：US10869636
申请日：2004-06-16
CPC分类号： G02B6/122 , G02B6/13 , G02B6/136 , G02B2006/12097
摘要： The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.
摘要翻译： 导光结构包括波导结构，其包括基底和低折射率底层材料。 波导结构被氧化以在波导结构的表面上形成氧化层。 在反应限制氧化态接近扩散限制状态后，氧化层进行各向同性蚀刻，并被反复氧化和蚀刻，使得波导结构在反应限制状态下连续氧化，减少氧化的总时间和氧化的体积 材料，使得波导结构的侧壁粗糙度有效地降低，导致导光的高透射率。
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