公开(公告)号：US06720227B1

公开(公告)日：2004-04-13

申请号：US10059615

申请日：2002-01-29

申请人： Daniel Kadosh ,  Jon D. Cheek ,  James F. Buller ,  Basab Bandyopadhyay

发明人： Daniel Kadosh ,  Jon D. Cheek ,  James F. Buller ,  Basab Bandyopadhyay

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L29/7833

摘要： A method of forming source/drain regions in a semiconductor device is provided. In one illustrative embodiment, the method comprises forming a gate electrode above a semiconducting substrate, forming source/drain regions in the substrate adjacent the gate electrode by performing at least the following steps: performing two ion implantation processes to form source/drain extensions for the device and performing a third ion implantation process to further form source/drain regions for the device. Various N-type and P-type dopant atoms such as arsenic, phosphorous, boron and boron difluoride may be used with the present invention.

摘要翻译： 提供了一种在半导体器件中形成源极/漏极区域的方法。 在一个说明性实施例中，该方法包括在半导体衬底之上形成栅电极，通过至少执行以下步骤在衬底中邻近栅电极形成源极/漏极区：执行两个离子注入工艺以形成用于 并且执行第三离子注入工艺以进一步形成用于该器件的源极/漏极区域。 本发明可以使用各种N型和P型掺杂剂原子，例如砷，磷，硼和二氟化硼。

公开(公告)号：US06506642B1

公开(公告)日：2003-01-14

申请号：US10020931

申请日：2001-12-19

申请人： Scott D. Luning ,  Jon D. Cheek ,  Daniel Kadosh ,  James F. Buller ,  David E. Brown

发明人： Scott D. Luning ,  Jon D. Cheek ,  Daniel Kadosh ,  James F. Buller ,  David E. Brown

IPC分类号： H01L218238

CPC分类号： H01L29/6653 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6656

摘要： Submicron-dimensioned MOS and/or CMOS transistors are fabricated utilizing a simplified removable sidewall spacer technique, enabling effective tailoring of individual transistors to optimize their respective functionality. Embodiments include forming a first sidewall spacer having a first thickness on the side surfaces of a plurality of gate electrodes of transistors, selectively removing the first sidewall spacers from the gate electrodes of certain transistors, and then depositing second sidewall spacers on remaining first sidewall spacers and on the side surfaces of the gate electrodes from which the first sidewall spacers have been removed. Embodiments enable separately tailoring n- and p-MOS transistors as well as individual n- or p-MOS transistors having different functionality, e.g., different drive current and voltage leakage requirements.

摘要翻译： 亚微米尺寸的MOS和/或CMOS晶体管使用简化的可移除侧壁间隔物技术制造，使得能够有效地定制各个晶体管以优化它们各自的功能。 实施例包括在晶体管的多个栅极电极的侧表面上形成具有第一厚度的第一侧壁间隔物，从某些晶体管的栅电极选择性地去除第一侧壁间隔物，然后在剩余的第一侧壁间隔物上沉积第二侧壁间隔物， 在栅电极的已经被去除了第一侧壁间隔物的侧表面上。 实施例能够单独定制n型和p型MOS晶体管以及具有不同功能的单独n型或p型MOS晶体管，例如不同的驱动电流和电压泄漏要求。

公开(公告)号：US06245649B1

公开(公告)日：2001-06-12

申请号：US09251923

申请日：1999-02-17

申请人： James F. Buller ,  Jon D. Cheek ,  Daniel Kadosh ,  Derick J. Wristers ,  H. Jim Fulford

发明人： James F. Buller ,  Jon D. Cheek ,  Daniel Kadosh ,  Derick J. Wristers ,  H. Jim Fulford

IPC分类号： H01L2104

CPC分类号： H01L29/105 ,  H01L21/2652

摘要： A method for forming a retrograde impurity profile in a semiconducting substrate is provided. The method comprises forming a sacrificial layer having a thickness in the range of about 10 Å to about 150 Å on the surface of a semiconducting substrate. Thereafter, an ion implantation process is performed wherein dopant impurity ions are directed through the sacrificial layer and into the semiconducting substrate under conditions effective to form a retrograde impurity profile in the semiconducting substrate.

摘要翻译： 提供了一种在半导体衬底中形成逆向杂质分布的方法。 该方法包括在半导体衬底的表面上形成具有在大约至大约的范围内的厚度的牺牲层。 此后，进行离子注入工艺，其中掺杂杂质离子在有效地在半导体衬底中形成逆向杂质分布的条件下引导通过牺牲层并进入半导体衬底。

公开(公告)号：US06566696B1

公开(公告)日：2003-05-20

申请号：US09907359

申请日：2001-07-17

申请人： Jon D. Cheek ,  Mark Michael ,  Derick J. Wristers ,  James F. Buller

发明人： Jon D. Cheek ,  Mark Michael ,  Derick J. Wristers ,  James F. Buller

IPC分类号： H01L2980

CPC分类号： H01L29/66583 ,  H01L29/105 ,  H01L29/66537 ,  H01L29/66545

摘要： Integrated circuits with transistors exhibiting improved junction capacitances and various methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a doped region in an active area of a substrate wherein the doped region has a first conductivity type and a first horizontal junction. A first source/drain region of the first conductivity type is formed in the active area with a second horizontal junction. A second source/drain region of the first conductivity type is formed in the active area with a third horizontal junction and a lateral separation from the first source/drain region that defines a channel region. The second and third horizontal junctions are positioned substantially at the first horizontal junction. The portion of the doped region positioned in the channel region is doped with an impurity of a second conductivity type that is opposite to the first conductivity type. Impurity grading across a source/drain-to-body junction is less abrupt, resulting in improved junction capacitance.

摘要翻译： 提供了具有改善的结电容的晶体管的集成电路及其制造方法。 一方面，提供一种制造方法，其包括在衬底的有源区中形成掺杂区域，其中所述掺杂区域具有第一导电类型和第一水平结。 第一导电类型的第一源极/漏极区域形成在具有第二水平结的有源区域中。 第一导电类型的第二源极/漏极区域在有源区域中形成有第三水平结和与限定沟道区域的第一源极/漏极区域的横向分离。 第二和第三水平接头基本位于第一水平接头处。 位于沟道区域中的掺杂区域的部分掺杂有与第一导电类型相反的第二导电类型的杂质。 通过源极/漏极到体区结的杂质分级不太突然，导致改善的结电容。

公开(公告)号：US06274415B1

公开(公告)日：2001-08-14

申请号：US09489068

申请日：2000-01-21

申请人： Jon D. Cheek ,  Mark Michael ,  Derick J. Wristers ,  James F. Buller

发明人： Jon D. Cheek ,  Mark Michael ,  Derick J. Wristers ,  James F. Buller

IPC分类号： H01L21337

CPC分类号： H01L29/66583 ,  H01L29/105 ,  H01L29/66537 ,  H01L29/66545

摘要： Integrated circuits with transistors exhibiting improved junction capacitances and various methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a doped region in an active area of a substrate wherein the doped region has a first conductivity type and a first horizontal junction. A first source/drain region of the first conductivity type is formed in the active area with a second horizontal junction. A second source/drain region of the first conductivity type is formed in the active area with a third horizontal junction and a lateral separation from the first source/drain region that defines a channel region. The second and third horizontal junctions are positioned substantially at the first horizontal junction. The portion of the doped region positioned in the channel region is doped with an impurity of a second conductivity type that is opposite to the first conductivity type. Impurity grading across a source/drain-to-body junction is less abrupt, resulting in improved junction capacitance.

摘要翻译： 提供具有改善的结电容的晶体管的集成电路及其制造方法。 一方面，提供一种制造方法，其包括在衬底的有源区中形成掺杂区域，其中所述掺杂区域具有第一导电类型和第一水平结。 第一导电类型的第一源极/漏极区域形成在具有第二水平结的有源区域中。 第一导电类型的第二源极/漏极区域在有源区域中形成有第三水平结和与限定沟道区域的第一源极/漏极区域的横向分离。 第二和第三水平接头基本位于第一水平接头处。 位于沟道区域中的掺杂区域的部分掺杂有与第一导电类型相反的第二导电类型的杂质。 通过源极/漏极到体区结的杂质分级不太突然，导致改善的结电容。

公开(公告)号：US06541321B1

公开(公告)日：2003-04-01

申请号：US10145519

申请日：2002-05-14

申请人： James F. Buller ,  Jon D. Cheek

发明人： James F. Buller ,  Jon D. Cheek

IPC分类号： H01L21336

CPC分类号： H01L21/823462

摘要： In one illustrative embodiment, the method comprises forming a sacrificial layer of material above a substrate comprised of silicon, performing a wet etching process to remove the sacrificial layer, implanting fluorine atoms into selected portions of the substrate after the sacrificial layer is removed, and performing a thermal oxidation process to form a plurality of gate insulation layers above the substrate, the gate insulation layers formed above the fluorine implanted selected portions of the substrate having a thickness that is greater than a thickness of the gate insulation layers formed above portions of the substrate not implanted with fluorine.

摘要翻译： 在一个说明性实施例中，该方法包括在由硅构成的衬底之上形成材料的牺牲层，执行湿蚀刻工艺以去除牺牲层，在去除牺牲层之后将氟原子注入到衬底的选定部分中，并执行 热氧化工艺以在衬底上形成多个栅极绝缘层，形成在衬底的氟注入的选定部分上方的栅极绝缘层的厚度大于在衬底的上方形成的栅极绝缘层的厚度 没有植入氟。

公开(公告)号：US5893739A

公开(公告)日：1999-04-13

申请号：US720728

申请日：1996-10-01

申请人： Daniel Kadosh ,  Fred N. Hause ,  Jon D. Cheek

发明人： Daniel Kadosh ,  Fred N. Hause ,  Jon D. Cheek

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/66659 ,  H01L21/28035 ,  H01L21/28176 ,  H01L29/4916 ,  H01L29/7835 ,  H01L29/7836

摘要： Various processes are provided for producing a p-channel and/or n-channel transistor. The present processes are thereby applicable to NMOS, PMOS or CMOS integrated circuits, any of which derive a benefit from having an asymmetrical LDD structure. The asymmetrical structure can be produced on a p-channel or n-channel transistor in various ways. According, the present process employs various techniques to form an asymmetrical transistor. The various techniques employ processing steps which vary depending upon the LDD result desired. First, the LDD implant can be performed only in the drain-side of the channel, or in the drain-side as well as the source-side. Second, the gate conductor sidewall surface adjacent the drain can be made thicker than the sidewall surface adjacent the source. Thickening of the drain-side sidewall spacer can be achieved either by depositing oxide upon a nitride-bearing film, or by growing additional oxide upon an exposed silicon surface having the source-side sidewall protected from growth. Third, the drain-side can be enhanced relative to the source-side by using an LTA implant. There may be numerous other modifications and alternative processing steps, all of which are described herein. Regardless of the sequence chosen, a barrier implant may be employed to prevent deleterious ingress of p-type implant species into the channel region. The present fabrication sequence reduces source-side resistance to enhance drive current--a desirable outcome for high speed circuits.

摘要翻译： 提供了用于产生p沟道和/或n沟道晶体管的各种工艺。 因此，本发明的方法可应用于NMOS，PMOS或CMOS集成电路，其中任何一种从具有不对称的LDD结构中获益。 可以以各种方式在p沟道或n沟道晶体管上产生非对称结构。 据此，本方法采用各种技术形成不对称晶体管。 各种技术采用根据​​所需LDD结果而变化的处理步骤。 首先，LDD注入仅能够在沟道的漏极侧，或者在漏极侧以及源极侧进行。 第二，与漏极相邻的栅极导体侧壁表面可以制成比邻近源极的侧壁表面更厚。 漏极侧壁间隔物的增厚可以通过在氮化物承载膜上沉积氧化物，或通过在具有源极侧壁保护生长的暴露的硅表面上生长另外的氧化物来实现。 第三，可以通过使用LTA植入物相对于源极侧的漏极侧增强。 可以存在许多其它修改和替代的处理步骤，其全部在此描述。 不管选择的顺序如何，可以使用阻挡植入物来防止p型植入物质进入通道区域的有害进入。 本制造顺序降低了源极电阻以增强驱动电流 - 高速电路的期望结果。

公开(公告)号：US5852310A

公开(公告)日：1998-12-22

申请号：US67793

申请日：1998-04-28

申请人： Daniel Kadosh ,  Mark I. Garnder ,  Jon D. Cheek

发明人： Daniel Kadosh ,  Mark I. Garnder ,  Jon D. Cheek

IPC分类号： H01L21/768 ,  H01L21/822 ,  H01L23/48 ,  H01L27/06 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L21/8221 ,  H01L23/485 ,  H01L23/535 ,  H01L27/0688 ,  H01L2924/0002

摘要： A process is provided for producing active and passive devices on various levels of a semiconductor topography. As such, the present process can achieve device formation in three dimensions to enhance the overall density at which an integrated circuit is formed. The multi-level fabrication process not only adds to the overall circuit density but does so with emphasis placed on interconnection between devices on separate levels. Thus, high performance interconnect is introduced whereby the interconnect is made as short as possible between features within one transistor level to features within another transistor level. The interconnect employs a via routed directly between a well of an upper level transistor to a well of a lower transistor so as to effect direct coupling between the wells of the respective transistors. Direct coupling in this fashion affords consistent operation of transistors arranged on separate elevation levels. The via is made as short as possible so as to reduce any discrepancy in substrate/well voltage potential. This ensures predictable operation of transistors fashioned on separate elevation levels.

摘要翻译： 提供了一种用于在半导体形貌的各种水平上产生有源和无源器件的工艺。 因此，本方法可以实现三维装置的形成，以增强形成集成电路的总体密度。 多级制造工艺不仅增加了整体电路密度，而且重点放在了在不同层次的器件之间的互连上。 因此，引入了高性能互连，由此在一个晶体管级内的特征之间使互连尽可能短以达到另一晶体管级内的特征。 互连使用直接在上级晶体管的阱与下部晶体管的阱之间布线的通孔，以便实现相应晶体管的阱之间的直接耦合。 以这种方式的直接耦合使得排列在单独的高程水平上的晶体管的一致操作。 通孔尽可能短，以减少衬底/阱电压电位的任何差异。 这确保了在单独的高程水平上形成的晶体管的可预测的操作。

公开(公告)号：US5930592A

公开(公告)日：1999-07-27

申请号：US720733

申请日：1996-10-01

申请人： Daniel Kadosh ,  Brad T. Moore ,  Jon D. Cheek

发明人： Daniel Kadosh ,  Brad T. Moore ,  Jon D. Cheek

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L21/28035 ,  H01L21/28176 ,  H01L29/4916 ,  H01L29/66659 ,  H01L29/7835 ,  H01L29/7836

摘要： Various processes are provided for producing a p-channel and/or n-channel transistor. The present processes are thereby applicable to NMOS, PMOS or CMOS integrated circuits, any of which derive a benefit from having an asymmetrical LDD structure. The asymmetrical structure can be produced on a p-channel or n-channel transistor in various ways. According, the present process employs various techniques to form an asymmetrical transistor. The various techniques employ processing steps which vary depending upon the LDD result desired. First the LDD implant can be performed only in the drain-side of the channel, or in the drain-side as well as the source-side. Second, the gate conductor sidewall surface adjacent the drain can be made thicker than the sidewall surface adjacent the source. Thickening of the drain-side sidewall spacer can be achieved either by depositing oxide upon a nitride-bearing film, or by growing additional oxide upon an exposed silicon surface having the source-side sidewall protected from growth. Third, the drain-side can be enhanced relative to the source-side by using an LTA implant. There may be numerous other modifications and alternative processing steps, all of which are described herein. Regardless of the sequence chosen, a barrier implant may be employed to prevent deleterious ingress of p-type implant species into the channel region. The present fabrication sequence reduces source-side resistance to enhance drive current--a desirable outcome for high speed circuits.

摘要翻译： 提供了用于产生p沟道和/或n沟道晶体管的各种工艺。 因此，本发明的方法可应用于NMOS，PMOS或CMOS集成电路，其中任何一种从具有不对称的LDD结构中获益。 可以以各种方式在p沟道或n沟道晶体管上产生非对称结构。 据此，本方法采用各种技术形成不对称晶体管。 各种技术采用根据​​所需LDD结果而变化的处理步骤。 首先，LDD注入只能在沟道的漏极侧，或在漏极侧以及源极侧进行。 第二，与漏极相邻的栅极导体侧壁表面可以制成比邻近源极的侧壁表面更厚。 漏极侧壁间隔物的增厚可以通过在氮化物承载膜上沉积氧化物，或通过在具有源极侧壁保护生长的暴露的硅表面上生长另外的氧化物来实现。 第三，可以通过使用LTA植入物相对于源极侧的漏极侧增强。 可以存在许多其它修改和替代的处理步骤，其全部在此描述。 不管选择的顺序如何，可以使用阻挡植入物来防止p型植入物质进入通道区域的有害进入。 本制造顺序降低了源极电阻以增强驱动电流 - 高速电路的期望结果。

公开(公告)号：US5780340A

公开(公告)日：1998-07-14

申请号：US739566

申请日：1996-10-30

申请人： Mark I. Gardner ,  Daniel Kadosh ,  Jon D. Cheek

发明人： Mark I. Gardner ,  Daniel Kadosh ,  Jon D. Cheek

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L29/78

CPC分类号： H01L29/66583 ,  H01L21/76 ,  H01L29/66613 ,  H01L29/66621 ,  H01L29/7834

摘要： An IGFET with a gate electrode in a transistor trench adjacent to an isolation trench is disclosed. The trenches are formed in a semiconductor substrate. A gate insulator is on a bottom surface of the transistor trench, insulative spacers are adjacent to opposing sidewalls of the transistor trench, and the gate electrode is on the gate insulator and spacers and is electrically isolated from the substrate. Substantially all of the gate electrode is within the transistor trench. A source and drain in the substrate are beneath and adjacent to the bottom surface of the transistor trench. The isolation trench is filled with an insulator and provides device isolation for the IGFET. Advantageously, the trenches are formed simultaneously using a single etch step.

摘要翻译： 公开了一种在与隔离沟槽相邻的晶体管沟槽中具有栅电极的IGFET。 沟槽形成在半导体衬底中。 栅极绝缘体位于晶体管沟槽的底表面上，绝缘间隔物与晶体管沟槽的相对的侧壁相邻，并且栅极电极位于栅极绝缘体和间隔物上，并与衬底电隔离。 基本上所有的栅电极都在晶体管沟槽内。 衬底中的源极和漏极在晶体管沟槽的底表面下方并且邻近晶体管沟槽的底表面。 绝缘体填充绝缘体，并为IGFET提供器件隔离。 有利地，使用单个蚀刻步骤同时形成沟槽。