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公开(公告)号：US20090225579A1
公开(公告)日：2009-09-10
申请号：US12265456
申请日：2008-11-05
CPC分类号： G11C5/02 , G11C5/06 , G11C13/00 , G11C13/0004 , G11C17/06 , G11C17/16 , G11C2213/71 , G11C2213/72 , H01L27/105
摘要： A high-density memory device is fabricated three-dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
摘要翻译： 高密度存储器件是三维地制造的。 为了使故障点保持低电平，地址解码电路被包括在每个层内，使得除了功率和数据线之外，只有地址信号线需要在层之间互连。
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公开(公告)号：US08116109B2
公开(公告)日：2012-02-14
申请号：US13065755
申请日：2011-03-29
CPC分类号： G11C5/02 , G11C5/06 , G11C13/00 , G11C13/0004 , G11C17/06 , G11C17/16 , G11C2213/71 , G11C2213/72 , H01L27/105
摘要： A high-density memory device is fabricated three-dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
摘要翻译： 高密度存储器件是三维地制造的。 为了使故障点保持低电平，地址解码电路被包括在每个层内，使得除了功率和数据线之外，只有地址信号线需要在层之间互连。
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公开(公告)号：US07933133B2
公开(公告)日：2011-04-26
申请号：US12265456
申请日：2008-11-05
CPC分类号： G11C5/02 , G11C5/06 , G11C13/00 , G11C13/0004 , G11C17/06 , G11C17/16 , G11C2213/71 , G11C2213/72 , H01L27/105
摘要： A high-density memory device is fabricated three-dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
摘要翻译： 高密度存储器件是三维地制造的。 为了使故障点保持低电平，地址解码电路被包括在每个层内，使得除了功率和数据线之外，只有地址信号线需要在层之间互连。
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公开(公告)号：US20160380145A1
公开(公告)日：2016-12-29
申请号：US14612677
申请日：2015-02-03
IPC分类号： H01L31/18 , H01L31/0304 , H01L31/02 , H01L31/0735
CPC分类号： H01L31/184 , H01L31/02008 , H01L31/02167 , H01L31/0304 , H01L31/0336 , H01L31/0735 , H01L31/075 , H01L31/076 , Y02E10/544 , Y02E10/548
摘要： Methods for forming solar cells include forming, over a substrate, a first junction comprising at least one III-V material and having a threading dislocation density of less than approximately 107 cm−2, and forming, over the first junction, a cap layer comprising silicon, wherein the substrate consists essentially of silicon.
摘要翻译： 用于形成太阳能电池的方法包括在衬底上形成包含至少一种III-V材料并且具有小于约107cm -2的穿透位错密度的第一结，并且在第一结上形成包括 硅，其中所述衬底基本上由硅组成。
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公开(公告)号：US20100116329A1
公开(公告)日：2010-05-13
申请号：US12474877
申请日：2009-05-29
IPC分类号： H01L31/00 , H01L31/0304
CPC分类号： H01L31/184 , H01L31/02008 , H01L31/02167 , H01L31/0304 , H01L31/0336 , H01L31/0735 , H01L31/075 , H01L31/076 , Y02E10/544 , Y02E10/548
摘要： Methods for forming solar cells include forming, over a substrate, a first junction comprising at least one III-V material and having a threading dislocation density of less than approximately 107 cm−2, and forming, over the first junction, a cap layer comprising silicon, wherein the substrate consists essentially of silicon.
摘要翻译： 用于形成太阳能电池的方法包括在衬底上形成包含至少一种III-V材料并且具有小于约107cm -2的穿透位错密度的第一结，并且在第一结上形成包括 硅，其中所述衬底基本上由硅组成。
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6.发明授权High-efficiency solar-cell arrays with integrated devices and methods for forming them 有权具有集成器件的高效率太阳能电池阵列及其形成方法公开(公告)号：US09178095B2
公开(公告)日：2015-11-03
申请号：US14096513
申请日：2013-12-04
申请人： John J. Hennessy , Andrew C. Malonis , Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
发明人： John J. Hennessy , Andrew C. Malonis , Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
IPC分类号： H01L31/05 , H01L31/02 , H01L27/142 , H01L31/0687
CPC分类号： H01L31/05 , H01L27/1421 , H01L31/02021 , H01L31/06875 , Y02E10/544 , Y02P70/521
摘要： In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.
摘要翻译： 在各种实施例中，在单个衬底上形成具有诸如旁路二极管的相关器件的分立太阳能电池阵列。
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7.发明申请公开(公告)号：US20110124146A1
公开(公告)日：2011-05-26
申请号：US12790078
申请日：2010-05-28
IPC分类号： H01L31/18
CPC分类号： H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/0735 , H01L31/0745 , H01L31/076 , H01L31/1804 , H01L31/1812 , H01L31/1852 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In various embodiments, solar cells include a junction including SiGe, a junction including at least one III-V material, and may be formed on silicon substrates and/or with silicon-based capping layers thereover.
摘要翻译： 在各种实施例中，太阳能电池包括包括SiGe的结，包括至少一种III-V材料的结，并且可以形成在硅衬底和/或其上的硅基覆盖层上。
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公开(公告)号：US20110143495A1
公开(公告)日：2011-06-16
申请号：US13026882
申请日：2011-02-14
IPC分类号： H01L31/0352
CPC分类号： H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/0735 , H01L31/0745 , H01L31/076 , H01L31/1804 , H01L31/1812 , H01L31/1852 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In various embodiments, solar cells include a junction including SiGe, a junction including at least one III-V material, and may be formed on silicon substrates and/or with silicon-based capping layers thereover.
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公开(公告)号：US07202124B2
公开(公告)日：2007-04-10
申请号：US10956481
申请日：2004-10-01
IPC分类号： H01L21/8238 , H01L21/322
CPC分类号： H01L21/26506 , C30B25/20 , C30B33/00 , H01L21/3221 , H01L21/3226 , H01L21/76254
摘要： A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering layer. Additionally, the donor wafer may possess a particle-confining region proximate the tensilely strained layer. The method also includes introducing particles into the donor wafer to a depth below the surface, and accumulating at least some particles within the tensilely strained gettering layer. Next, the method includes initiating a cleaving action so as to separate at least one of the material layers form the substrate. The tensilely strained gettering layer may accumulate particles and/or point defects and reduce the implantation dose and thermal budget required for cleaving.
摘要翻译： 使用拉伸应变吸气层形成半导体结构的方法和结构。 该方法包括形成供体晶片，其包括设置在基板上方的拉伸变应的吸气层，以及设置在拉伸变应的吸气层上的至少一个材料层。 此外，施主晶片可以具有靠近拉伸应变层的颗粒约束区域。 该方法还包括将颗粒引入供体晶片到表面下方的深度，并且在拉伸变应的吸气层内积聚至少一些颗粒。 接下来，该方法包括引发切割动作，以将至少一个材料层分离成基底。 拉伸应变吸气层可能会积聚颗粒和/或点缺陷，并减少切割所需的注射剂量和热预算。
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10.发明申请HIGH-EFFICIENCY SOLAR-CELL ARRAYS WITH INTEGRATED DEVICES AND METHODS FOR FORMING THEM 有权具有集成设备的高效太阳能电池阵列及其形成方法公开(公告)号：US20140166066A1
公开(公告)日：2014-06-19
申请号：US14096513
申请日：2013-12-04
申请人： John J. Hennessy , Andrew C. Malonis , Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
发明人： John J. Hennessy , Andrew C. Malonis , Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
IPC分类号： H01L31/05
CPC分类号： H01L31/05 , H01L27/1421 , H01L31/02021 , H01L31/06875 , Y02E10/544 , Y02P70/521
摘要： In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.
摘要翻译： 在各种实施例中，在单个衬底上形成具有诸如旁路二极管的相关器件的分立太阳能电池阵列。
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