Dual large area plasma processing system
    1.
    发明申请
    Dual large area plasma processing system 审中-公开
    双大面积等离子处理系统

    公开(公告)号:US20070119375A1

    公开(公告)日:2007-05-31

    申请号:US11296708

    申请日:2005-11-30

    IPC分类号: C23C16/00

    CPC分类号: C23C16/487

    摘要: A dual large area plasma processing system is provided which can comprise a substrate, a first and second electron beam wherein the substrate is positioned between the first and second electron beam, a first plasma produced by the first electron beam passing through a first gas wherein the first plasma being a first low electron temperature plasma of pre-determined width, length, thickness, and location relative to a surface; and a second plasma produced by the second electron beam passing through a second gas wherein the second plasma being a low electron temperature plasma of pre-determined width, length, thickness, and location relative to a surface. The system can include a first gas manifold that can be located above the first electron beam and control the first gas and a second gas manifold that can be located above the second electron beam and control the second gas. The system can include an external magnetic field for confining the electron beams so as to produce uniform plasmas. Also provided is a method for dual large area plasma processing which can comprise providing a first and second electron beam, providing a substrate between the first electron beam and the second electron beam, passing the first electron beam through a first gas to produce a first plasma, passing the second electron beam through a second gas to produce a second plasma, and providing a first gas manifold that can be located above the first electron beam and supply the first gas.

    摘要翻译: 提供了一种双重大面积等离子体处理系统,其可以包括基板,第一和第二电子束,其中基板位于第一和第二电子束之间,由通过第一气体的第一电子束产生的第一等离子体,其中, 第一等离子体是相对于表面具有预定宽度,长度,厚度和位置的第一低电子温度等离子体; 以及由第二电子束通过第二气体产生的第二等离子体,其中第二等离子体是相对于表面具有预定宽度,长度,厚度和位置的低电子温度等离子体。 该系统可以包括可位于第一电子束上方并控制第一气体的第一气体歧管和可位于第二电子束上方并控制第二气体的第二气体歧管。 该系统可以包括用于限制电子束的外部磁场,以便产生均匀的等离子体。 还提供了一种用于双重大面积等离子体处理的方法,其可以包括提供第一和第二电子束,在第一电子束和第二电子束之间提供衬底,使第一电子束通过第一气体以产生第一等离子体 使第二电子束通过第二气体以产生第二等离子体,并且提供可位于第一电子束上方并提供第一气体的第一气体歧管。

    Method and apparatus for producing an ion-ion plasma continuous in time
    2.
    发明申请
    Method and apparatus for producing an ion-ion plasma continuous in time 审中-公开
    及时生产离子等离子体等离子体的方法和装置

    公开(公告)号:US20050067099A1

    公开(公告)日:2005-03-31

    申请号:US10672269

    申请日:2003-09-26

    摘要: An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.

    摘要翻译: 离子离子源,其特征在于包含大量卤素或卤素气体的处理室。 第二室耦合到处理室并且具有产生高能电子束的电子源。 高能电子束被注入到处理室中,在其中被高能电子束成形和限制的装置成形和限制。 当注入到处理室中时,在第二室中产生的高能电子束使卤素气体离子化,从而在处理室中产生致密的离子等离子体,其在时间上是连续的。 一种在时间上产生离子等离子体连续的方法。

    Electron beam enhanced large area deposition system
    5.
    发明申请
    Electron beam enhanced large area deposition system 审中-公开
    电子束增强大面积沉积系统

    公开(公告)号:US20050040037A1

    公开(公告)日:2005-02-24

    申请号:US10644567

    申请日:2003-08-20

    CPC分类号: C23C14/3478

    摘要: This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.

    摘要翻译: 本发明提供了使用电子束产生的等离子体在薄膜上沉积薄膜和涂层的方法。 等离子体可用作溅射应用中的离子源,其中离子用于从目标表面释放材料,然后可将其冷凝在基底上以形成膜或涂层。 或者,等离子体可以与现有的沉积源组合,包括基于溅射或蒸发技术的沉积源。 在任一种配置中,等离子体在反应沉积过程中作为生长膜表面的离子和自由基物质的来源。 电子束大面积沉积系统(EBELADS)是生产直到并包括几平方米的薄膜或涂层的新方法。

    Watermarking a page description language file
    7.
    发明申请
    Watermarking a page description language file 有权
    水印一个页面描述语言文件

    公开(公告)号:US20050286948A1

    公开(公告)日:2005-12-29

    申请号:US11142827

    申请日:2005-05-31

    申请人: Scott Walton

    发明人: Scott Walton

    IPC分类号: H04N1/32 G06F15/00

    摘要: The present invention provides methods and systems for steganographically encoding a file which is in a page description language (PDL) such as PostScript. Aspects of the present invention can be used to: i) encode a PDL file and generate an encoded PDL file; and ii) provide an “interpreter” which generates raster images from a PDL file. Portions of the raster images can be steganographically encoded. Encoded raster images can be printed or the raster images can be combined into a new PDL file.

    摘要翻译: 本发明提供了用于对诸如PostScript之类的页面描述语言(PDL)的文件进行隐写编码的方法和系统。 本发明的方面可用于:i)编码PDL文件并生成编码的PDL文件; 和ii)提供从PDL文件生成光栅图像的“解释器”。 栅格图像的一部分可以被隐写编码。 可以打印编码的光栅图像,或将光栅图像组合成新的PDL文件。