公开(公告)号：US5221366A

公开(公告)日：1993-06-22

申请号：US677918

申请日：1991-04-01

申请人： David A. Roberts ,  John C. Ivankovits ,  John A. T. Norman ,  David A. Bohling

发明人： David A. Roberts ,  John C. Ivankovits ,  John A. T. Norman ,  David A. Bohling

IPC分类号： B23K35/36 ,  B23K35/38 ,  C23F1/12 ,  H05K3/34

CPC分类号： C23F1/12 ,  B23K35/3612 ,  B23K35/3615 ,  B23K35/38 ,  H05K3/3489

摘要： This invention is a residue-free vapor-phase process for etching metallic layers during the manufacturing of integrated circuits. The process comprises contacting a portion of the metallic surface to be etched with an effective amount of an etching agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal to be removed at a temperature sufficient to form a volatile metal-ligand complex. The volatile metal-ligand complex is sublimed from the surface thereby etching successive layers of the metal.

摘要翻译： 本发明是在制造集成电路期间蚀刻金属层的无残留气相法。 该方法包括使待蚀刻的金属表面的一部分与有效量的蚀刻剂接触，所述腐蚀剂包含分散在能够氧化待除去金属的气氛中的β-二酮或β-酮亚胺，该温度足以形成挥发性 金属 - 配体络合物。 挥发性金属 - 配体络合物从表面升华，从而蚀刻金属的连续层。

公开(公告)号：US5094701A

公开(公告)日：1992-03-10

申请号：US677915

申请日：1991-04-01

申请人： John A. T. Norman ,  John C. Ivankovits ,  David A. Roberts ,  David A. Bohling

发明人： John A. T. Norman ,  John C. Ivankovits ,  David A. Roberts ,  David A. Bohling

IPC分类号： C23G5/032 ,  B23K35/36 ,  B23K35/38 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/50 ,  C23F1/12 ,  H01L21/304 ,  H01L21/306 ,  H05K3/34

CPC分类号： H01L21/02046 ,  B23K35/3612 ,  B23K35/3615 ,  B23K35/38 ,  C11D7/264 ,  C11D7/28 ,  C11D7/3236 ,  C23F1/12 ,  H01L21/02049 ,  H05K3/3489

摘要： This invention is a residue-free cleaning process for removing metal-containing contaminants from a surface of a substrate of the type used in manufacturing semi-conductor devices. The process comprises contacting the substrate with an effective amount of a cleaning agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal-contaminants at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate. The volatile metal-ligand complexes are sublimed from the surface of the substrate leaving essentially no residue.

摘要翻译： 本发明是一种用于从半导体器件制造中使用的类型的衬底的表面去除含金属污染物的无残留清洁方法。 该方法包括使底物与有效量的清洁剂接触，所述清洁剂包含分散在能够氧化金属污染物的气氛中的β-二酮或β-酮亚胺，所述温度足以在所述表面上形成挥发性金属 - 配体复合物 基质。 挥发性金属 - 配体络合物从基材的表面升华，基本上不留下残余物。

公开(公告)号：US5028724A

公开(公告)日：1991-07-02

申请号：US502092

申请日：1990-03-30

申请人： John C. Ivankovits ,  David A. Bohling ,  John A. T. Norman ,  David A. Roberts

发明人： John C. Ivankovits ,  David A. Bohling ,  John A. T. Norman ,  David A. Roberts

IPC分类号： C07C45/77 ,  C07C49/92 ,  C07C251/76 ,  C07C251/78 ,  C07F1/00 ,  C07F5/00 ,  C07F7/00 ,  C07F11/00 ,  C07F19/00

CPC分类号： C07F5/003 ,  C07C251/76 ,  C07C251/78 ,  C07C45/77 ,  C07C49/92 ,  C07F1/005 ,  C07F11/005 ,  C07F19/005 ,  C07F7/003

摘要： A process for the vapor-phase synthesis of non-adduct volatile fluorinated and non-fluorinated metal-ligand complexes comprising contacting a .beta.-diketone or .beta.-ketoimine ligand with an inert carrier gas to vaporize the ligand, reacting the vaporized ligand with a metal species at a temperature sufficient to form the metal-ligand complex and recovering the metal-ligand complex by sublimation. The process is conducted in the absence of solvent thereby providing pure non-adduct metal-ligand complexes. Such complexes are particularly suited for specialty applications requiring use of high purity compounds.

摘要翻译： 一种用于气相合成非加合物挥发性氟化和非氟化金属 - 配体配合物的方法，包括使β-二酮或β-酮亚胺配体与惰性载气接触以蒸发配体，使蒸发的配体与金属 物质，其温度足以形成金属 - 配体络合物并通过升华回收金属 - 配体络合物。 该方法在不存在溶剂的情况下进行，从而提供纯非加合物金属 - 配体络合物。 这种复合物特别适用于需要使用高纯度化合物的特殊应用。

公开(公告)号：US5213622A

公开(公告)日：1993-05-25

申请号：US777818

申请日：1991-10-11

申请人： David A. Bohling ,  John C. Ivankovits ,  David A. Roberts

发明人： David A. Bohling ,  John C. Ivankovits ,  David A. Roberts

IPC分类号： C11D7/02 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G5/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H05K3/26

CPC分类号： H01L21/02046 ,  C11D11/0047 ,  C11D7/02 ,  C11D7/08 ,  C11D7/265 ,  C23G5/00 ,  H01L21/02085 ,  H01L21/3105

摘要： This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process comprises contacting the surface to be cleaned with an effective amount of a cleaning agent comprising a carboxylic acid selected from acetic acid or formic acid at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surface of the substrate providing a clean, substantially residue-free surface.

公开(公告)号：US5213621A

公开(公告)日：1993-05-25

申请号：US777821

申请日：1991-10-11

申请人： John C. Ivankovits ,  David A. Bohling ,  David A. Roberts

发明人： John C. Ivankovits ,  David A. Bohling ,  David A. Roberts

IPC分类号： C11D7/02 ,  C11D7/08 ,  C11D7/28 ,  C11D11/00 ,  C23G5/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H05K3/26

CPC分类号： H01L21/02046 ,  C11D11/0047 ,  C11D7/02 ,  C11D7/08 ,  C11D7/28 ,  C23G5/00 ,  H01L21/02049 ,  H01L21/3105

摘要： This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process employs cleaning agents comprising an effective amount of a partially halogenated or fully halogenated linear or branched carboxylic acid having from 2 to about 10 carbon atoms wherein the halogen is selected from fluorine or chlorine. The process comprises contacting the surface to be cleaned with an effective amount of the desired cleaning agent at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surfaces of the substrate providing a clean, substantially residue-free surface.

公开(公告)号：US5062902A

公开(公告)日：1991-11-05

申请号：US635904

申请日：1990-12-27

申请人： Thomas L. Ellison ,  David A. Roberts ,  John C. Ivankovits ,  John A. T. Norman

发明人： Thomas L. Ellison ,  David A. Roberts ,  John C. Ivankovits ,  John A. T. Norman

IPC分类号： B23K35/36 ,  B23K35/38 ,  H05K3/34

CPC分类号： B23K35/38 ,  B23K35/3612 ,  B23K35/3615 ,  H05K3/3489

摘要： A residue-free fluxing process wherein the active fluxing agent comprises a .beta.-diketone or .beta.-ketoimine ligand. Such ligands react with surface metal oxides on workpieces to be soldered to form volatile metal-ligand complexes as reaction products which are sublimed from the surface leaving essentially no residue on the workpieces. The fluxing agents can be utilized in gas-phase processes wherein the workpieces are contacted with an effective amount of one or more ligands which are dispersed in a carrier gas or solvent or by incorporating the ligands into an alloy-vehicle mixture for use as conventional creams or pastes. The invention eliminates the need for post-reflow cleaning using solvents since no flux residue remains on the workpieces to be soldered following volitilization of the metal-ligand complex.

摘要翻译： 一种无残渣助熔方法，其中活性助熔剂包括β-二酮或β-酮亚胺配体。 这样的配体与要焊接的工件上的表面金属氧化物反应以形成挥发性金属 - 配体络合物，作为从表面升华的反应产物，在工件上基本上不残留残留物。 助熔剂可用于气相方法，其中工件与有效量的一种或多种分散在载体气体或溶剂中的配体接触或通过将配体引入合成载体混合物中用作常规的乳膏 或糊剂。 本发明消除了使用溶剂的后回流清洗的需要，因为在金属 - 配体络合物挥发后，待焊接的工件上没有残留助焊剂残余物。

公开(公告)号：US5009725A

公开(公告)日：1991-04-23

申请号：US502209

申请日：1990-03-30

申请人： Thomas L. Ellison ,  David A. Roberts ,  John C. Ivankovits ,  John A. T. Norman

发明人： Thomas L. Ellison ,  David A. Roberts ,  John C. Ivankovits ,  John A. T. Norman

IPC分类号： B23K35/36 ,  B23K35/38 ,  C23F1/12 ,  H05K3/34

CPC分类号： C23F1/12 ,  B23K35/3612 ,  B23K35/3615 ,  B23K35/38 ,  H05K3/3489

摘要： A residue-free fluxing process wherein the active fluxing agent comprises a .beta.-diketone or .beta.-ketoimine ligand. Such ligands react with surface metal oxides on workpieces to be soldered to form volatile metal-ligand complexes as reaction products which are sublimed from the surface leaving essentially no residue on the workpieces. The fluxing agents can be utilized in gas-phase processes wherein the workpieces are contacted with an effective amount of one or more ligands which are dispersed in a carrier gas or solvent or by incorporating the ligands into an alloy-vehicle mixture for use as conventional creams or pastes. The invention eliminates the need for post-reflow cleaning using solvents since no flux residue remains on the workpieces to be soldered following volatilization of the metal-ligand complex.

摘要翻译： 一种无残渣助熔方法，其中活性助熔剂包括β-二酮或β-酮亚胺配体。 这样的配体与要焊接的工件上的表面金属氧化物反应以形成挥发性金属 - 配体络合物，作为从表面升华的反应产物，在工件上基本上不残留残留物。 助熔剂可用于气相方法，其中工件与有效量的一种或多种分散在载体气体或溶剂中的配体接触或通过将配体引入合成载体混合物中用作常规的乳膏 或糊剂。 本发明消除了使用溶剂的后回流清洗的需要，因为在金属 - 配体络合物挥发后待焊接的工件上没有残留焊剂残余物。

公开(公告)号：US5364007A

公开(公告)日：1994-11-15

申请号：US135383

申请日：1993-10-12

申请人： Stephen W. Jacobs ,  Gregory K. Arslanian ,  Bruce M. Adams ,  John C. Ivankovits ,  Donald J. Bowe

发明人： Stephen W. Jacobs ,  Gregory K. Arslanian ,  Bruce M. Adams ,  John C. Ivankovits ,  Donald J. Bowe

IPC分类号： B23K3/06 ,  B23K3/00 ,  B23K31/02

CPC分类号： B23K3/0646

摘要： An apparatus and method of reflow soldering electronic components, preferably to printed circuit boards, in an inert atmosphere to reduce solder defects and the need for flux or cleaning wherein the inert atmosphere is provided from a source of inert gas through several distribution lines which parallel the conveyor belt of a reflow solder furnace and supply each end of porous sintered metal diffuser tubes situated above the conveyor belt, as well as gas knives situated in baffle compartments at the inlet and outlet of the reflow solder furnace to strip barrier layers of oxygen atmosphere from the electronic components and preclude ingress of oxygen atmosphere into the reflow solder furnace.

摘要翻译： 一种在惰性气氛中回流焊接电子元件，优选印刷电路板的装置和方法，以减少焊料缺陷以及对助焊剂或清洁的需要，其中惰性气体通过若干分配线从惰性气体源提供， 回流焊炉的输送带，并且供应位于输送带上方的多孔烧结金属扩散管的每一端，以及位于回流焊炉的入口和出口处的挡板室中的气刀，以从氧气气氛中剥离阻挡层 电子元件并防止氧气进入回流焊炉。