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10 条记录 (耗时 0.019 秒)

    Method of doping and implanting using arsine, antimony, and phosphine substitutes
    6.
    发明授权
    Method of doping and implanting using arsine, antimony, and phosphine substitutes 失效
    使用胂，锑和膦替代物的掺杂和注入方法

    公开(公告)号：US4988640A

    公开(公告)日：1991-01-29

    申请号：US433080

    申请日：1989-11-06

    申请人： David A. Bohling ,  Gregory T. Muhr ,  David A. Roberts

    发明人： David A. Bohling ,  Gregory T. Muhr ,  David A. Roberts

    IPC分类号： C23C16/30

    CPC分类号： C23C16/30 ,  Y10S148/041 ,  Y10S148/083 ,  Y10S438/961

    摘要： The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc. doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris-trifluoromethyl arsenic (AS(CF.sub.3) .sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

    摘要翻译： 本发明涉及至少部分氟化的有机金属化合物在反应沉积应用中的用途。 更具体地说，本发明涉及氟代有机金属化合物M（CF 3）3或任何M（CnF（2n + 1））3-yHy化合物的用途，其中（y 2），M（CH 2 CF 3）3或任何 （CnH [（2n + 1）-x] Fx）3-yHy的氟代烷基有机金属化合物，其中y <= 2; x具有值1

    Method of depositing arsine, antimony and phosphine substitutes
    7.
    发明授权
    Method of depositing arsine, antimony and phosphine substitutes 失效
    胂，锑和膦替代物的沉积方法

    公开(公告)号：US4904616A

    公开(公告)日：1990-02-27

    申请号：US224089

    申请日：1988-07-25

    申请人： David A. Bohling ,  Gregory T. Muhr ,  David A. Roberts

    发明人： David A. Bohling ,  Gregory T. Muhr ,  David A. Roberts

    IPC分类号： C30B25/14 ,  C01B25/08 ,  C03C17/22 ,  C03C21/00 ,  C07F9/50 ,  C07F9/72 ,  C07F9/90 ,  C23C16/30 ,  C30B29/40 ,  C30B31/06 ,  H01L21/205

    CPC分类号： C23C16/30 ,  Y10S148/065 ,  Y10S148/11 ,  Y10S252/951

    摘要： The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, M(CF.sub.2 CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy; and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris-trifluoromethyl arsenic (As(CF.sub.3).sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

    Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same
    8.
    发明授权
    Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same 失效
    用于从集成电路组件去除含有污染物的金属气相清洗剂及其使用方法

    公开(公告)号：US5332444A

    公开(公告)日：1994-07-26

    申请号：US982196

    申请日：1992-11-25

    申请人： Mark A. George ,  David A. Bohling

    发明人： Mark A. George ,  David A. Bohling

    IPC分类号： C01B33/00 ,  C11D7/22 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105 ,  B08B5/00 ,  C09K13/00

    CPC分类号： H01L21/02046 ,  H01L21/3105

    摘要： This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process employs cleaning agents comprising an effective amount of hexamethyldisilazane. The process comprises contacting the surface to be cleaned with an effective amount of the desired cleaning agent at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surfaces of the substrate providing a clean, substantially residue-free surface.

    摘要翻译： 本发明是用于在制造完成的电子器件所需的许多制造步骤之间从集成电路和半导体的表面清除含金属污染物的气相方法。 该方法使用包含有效量的六甲基二硅氮烷的清洁剂。 该方法包括使待清洁的表面与足够在待清洁的基底表面上形成挥发性金属 - 配体复合物的温度下接触有效量的所需清洁剂。 挥发性金属 - 配体络合物从基材的表面升华，提供干净，基本上无残留的表面。

    Amino replacements for arsine, antimony and phosphine
    9.
    发明授权
    Amino replacements for arsine, antimony and phosphine 失效
    氨基取代胂，锑和膦

    公开(公告)号：US5124278A

    公开(公告)日：1992-06-23

    申请号：US586845

    申请日：1990-09-21

    申请人： David A. Bohling ,  Gregory T. Muhr ,  Sherri L. Bassner

    发明人： David A. Bohling ,  Gregory T. Muhr ,  Sherri L. Bassner

    IPC分类号： C23C16/30 ,  C30B25/02

    CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/40 ,  Y10S148/016 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/065

    摘要： The present invention addresses the use of metalorganic amines as metallic donor source compounds in reactive deposition applications. More specifically, the present invention addresses the use of the amino-substituted metallic donor source compounds M(NR.sub.2).sub.3-x H.sub.x, where R is organic, alkyl or fluoroalkyl, and x is less than or equal to 2, and M=As, Sb or P, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the metalorganic vapor phase epitaxy of compound semiconductor material such as GaAs, InP, AlGaAs, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy (or MOMBE); and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silcon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris(dialkylamino) arsenic (As(NR.sub.2).sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

    摘要翻译： 本发明涉及金属有机胺作为反应沉积应用中金属供体源化合物的用途。 更具体地，本发明涉及氨基取代的金属供体源化合物M（NR2）3-xHx的用途，其中R是有机基团，烷基或氟代烷基，x小于或等于2，M = As， Sb或P，在需要沉积相应元素的工艺中。 这些用途包括许多不同的过程; 化合物半导体材料如GaAs，InP，AlGaAs等的金属有机气相外延; 掺杂SiO 2或硼硅酸盐基玻璃以增强玻璃的回流性能; 硅外延材料的原位n型掺杂; 采购砷或磷进行离子注入; 化学束外延（或MOMBE）; 以及扩散掺杂到诸如二氧化硅，硅和多晶硅的电子材料中。 这些类型的材料通常具有高挥发性，低毒性，不稳定的金属 - 配体键和稳定的分解产物。 具体来说，已经确定了在制造硅集成电路，III-V族化合物半导体，光电子学和其他电子器件中使用三（二烷基氨基）砷（As（NR 2）3）作为胂的替代物。