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11 条记录 (耗时 0.038 秒)

    Nanowire field effect junction diode
    5.
    发明授权
    Nanowire field effect junction diode 有权
    纳米线场效应结二极管

    公开(公告)号：US07989800B2

    公开(公告)日：2011-08-02

    申请号：US12578676

    申请日：2009-10-14

    申请人： Qiliang Li ,  Dimitris E. Ioannou ,  Yang Yang ,  Xiaoxiao Zhu

    发明人： Qiliang Li ,  Dimitris E. Ioannou ,  Yang Yang ,  Xiaoxiao Zhu

    IPC分类号： H01L31/09

    CPC分类号： H01L31/0352 ,  H01L31/06 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H03K17/74 ,  Y02E10/50 ,  Y10S977/762 ,  Y10S977/938

    摘要： A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.

    摘要翻译： 构造在绝缘透明基板上的纳米线场效应结二极管，其允许形成诸如视觉光，紫外线辐射的辐射; 或红外辐射通过。 纳米线设置在绝缘透明基板上。 阳极连接到纳米线的第一端，并且阴极连接到纳米线的第二端。 氧化物层覆盖纳米线。 第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。 第二导电栅极设置在氧化物层的顶部上，与非零分离相邻，并与第一导电栅极非零分离相邻。 通过施加相反的栅极电压，可以沿着纳米线通道动态地形成可控的PN结。 通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。

    Nanowire Field Effect Junction Diode
    6.
    发明申请
    Nanowire Field Effect Junction Diode 有权
    纳米线场效应结二极管

    公开(公告)号：US20100090198A1

    公开(公告)日：2010-04-15

    申请号：US12578676

    申请日：2009-10-14

    申请人： Qiliang Li ,  Dimitris E. Ioannou ,  Yang Yang ,  Xiaoxiao Zhu

    发明人： Qiliang Li ,  Dimitris E. Ioannou ,  Yang Yang ,  Xiaoxiao Zhu

    IPC分类号： H01L31/09

    CPC分类号： H01L31/0352 ,  H01L31/06 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H03K17/74 ,  Y02E10/50 ,  Y10S977/762 ,  Y10S977/938

    摘要： A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.

    摘要翻译： 构造在绝缘透明基板上的纳米线场效应结二极管，其允许形成诸如视觉光，紫外线辐射的辐射; 或红外辐射通过。 纳米线设置在绝缘透明基板上。 阳极连接到纳米线的第一端，并且阴极连接到纳米线的第二端。 氧化层覆盖纳米线。 第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。 第二导电栅极设置在氧化物层的顶部上，与非零分离相邻，并与第一导电栅极非零分离相邻。 通过施加相反的栅极电压，可以沿着纳米线通道动态地形成可控的PN结。 通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。

    SYSTEMS AND METHODS FOR DYNAMIC BIOMETRIC CONTROL OF IOT DEVICES
    9.
    发明申请
    SYSTEMS AND METHODS FOR DYNAMIC BIOMETRIC CONTROL OF IOT DEVICES 有权

    公开(公告)号：US20230056100A1

    公开(公告)日：2023-02-23

    申请号：US17404617

    申请日：2021-08-17

    申请人： Robin H. Stewart ,  Qiliang Li

    发明人： Robin H. Stewart ,  Qiliang Li

    IPC分类号： G05B13/02 ,  A61B5/00 ,  G16Y30/00 ,  G06N20/00

    摘要： Systems and methods of dynamic IoT device regulation and control can aid in shifting a user's emotional state from a first state of mind to a preferred second state of mind, using the user's biomarker response to device settings. Particularly, an IoT device controller may be embedded within a wearable device that is wirelessly connected to a computing device and one or more IoT devices. Initially, each wearable device can be calibrated, wherein a matrix of sensed user biomarker responses can be generated. In some embodiments, the system continuously monitors user biomarkers to detect which physiological state exists. When the user enters into the first physiological/psychological state, the system can adjust each IoT device to align with the second state. When the system detects that the user biomarker response has not shifted, the system can continuously adjust IoT settings based upon a learning algorithm having monitored user biomarkers as input.

    High performance topological insulator transistors
    10.
    发明授权
    High performance topological insulator transistors 有权

    公开(公告)号：US11001497B2

    公开(公告)日：2021-05-11

    申请号：US14652017

    申请日：2013-12-12

    申请人： Qiliang Li ,  Curt A Richter ,  Hao Zhu

    发明人： Qiliang Li ,  Curt A Richter ,  Hao Zhu

    IPC分类号： B82Y10/00 ,  H01L29/775 ,  H01L29/06 ,  H01L29/82 ,  H01L29/66 ,  H01L49/00 ,  H01L29/786

    摘要： Topological insulators, such as single-crystal Bi2Se3 nanowires, can be used as the conduction channel in high-performance transistors, a basic circuit building block. Such transistors exhibit current-voltage characteristics superior to semiconductor nanowire transistors, including sharp turn-on, nearly zero cutoff current, very large On/Off current ratio, and well-saturated output current. The metallic electron transport at the surface with good effective mobility can be effectively separated from the conduction of the bulk topological insulator and adjusted by field effect at a small gate voltage. Topological insulators, such as Bi2Se3, also have a magneto-electric effect that causes transistor threshold voltage shifts with external magnetic field. These properties are desirable for numerous microelectronic and nanoelectronic circuitry applications, among other applications.