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公开(公告)号：US20080035606A1
公开(公告)日：2008-02-14
申请号：US11834299
申请日：2007-08-06
IPC分类号： G01R31/00
摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.
摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。
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2.发明申请Notch-Free Etching of High Aspect SOI Structures Using A Time Division Multiplex Process and RF Bias Modulation 审中-公开使用时分复用过程和RF偏置调制的高截面SOI结构的无槽蚀刻公开(公告)号：US20070175856A1
公开(公告)日：2007-08-02
申请号：US11681004
申请日：2007-04-16
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/30655 , H01L21/76283
摘要： The present invention provides a method and an apparatus for reducing, or eliminating, the notching observed in the creation of SOI structures on a substrate when plasma etching through an alternating deposition/etch process by modulating the RF bias that is applied to the cathode. Modulation of the bias voltage to the cathode is accomplished either discretely, between at least two frequencies, or continuously during the alternating deposition/etch process.
摘要翻译： 本发明提供了一种用于减少或消除在通过调制施加到阴极的RF偏压的交替沉积/蚀刻工艺的等离子体蚀刻时在衬底上产生SOI结构时观察到的凹口的方法和装置。 对阴极的偏置电压的调制在离散地，至少两个频率之间或在交替沉积/蚀刻过程期间连续地实现。
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公开(公告)号：US08187483B2
公开(公告)日：2012-05-29
申请号：US11834299
申请日：2007-08-06
摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.
摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。
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4.发明申请Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation 审中-公开使用时分多路复用处理和RF偏置调制的高方位SOI结构的无槽蚀刻公开(公告)号：US20050112891A1
公开(公告)日：2005-05-26
申请号：US10968823
申请日：2004-10-18
IPC分类号： H01L21/3065 , H01L21/762 , H01L21/302 , H01L21/461
CPC分类号： H01L21/30655 , H01L21/76283
摘要： The present invention provides a method and an apparatus for reducing, or eliminating, the notching observed in the creation of SOI structures on a substrate when plasma etching through an alternating deposition/etch process by modulating the RF bias that is applied to the cathode. Modulation of the bias voltage to the cathode is accomplished either discretely, between at least two frequencies, or continuously during the alternating deposition/etch process.
摘要翻译： 本发明提供了一种用于减少或消除在通过调制施加到阴极的RF偏压的交替沉积/蚀刻工艺的等离子体蚀刻时在衬底上产生SOI结构时观察到的凹口的方法和装置。 对阴极的偏置电压的调制在离散地，至少两个频率之间或在交替沉积/蚀刻过程期间连续地实现。
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公开(公告)号：US07713432B2
公开(公告)日：2010-05-11
申请号：US11229319
申请日：2005-09-16
申请人： David Johnson , Russell Westerman
发明人： David Johnson , Russell Westerman
IPC分类号： C03C15/00
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32935 , H01J37/3299
摘要： The present invention provides a method and an apparatus for improving the etch uniformity across a substrate during a plasma etch process that employs the use of an inductively coupled plasma helical inductor. The plasma apparatus comprising a vacuum chamber, a support member in the vacuum chamber for holding the substrate, an etchant gas supply for providing an etchant gas to the vacuum chamber, an exhaust in fluid communication with the vacuum chamber, an RF power source and a helical inductor disposed around or near a portion of the vacuum chamber. A sensor is provided for measuring a process attribute to generate a signal to a controller that then controls a mechanism that varies the position of the helical inductor so that the uniformity of the plasma etch is improved.
摘要翻译： 本发明提供了一种用于在使用电感耦合等离子体螺旋电感器的等离子体蚀刻工艺期间改善衬底上的蚀刻均匀性的方法和装置。 等离子体装置包括真空室，用于保持基板的真空室中的支撑构件，用于向真空室提供蚀刻剂气体的蚀刻剂气体供应源，与真空室流体连通的排气，RF电源和 设置在真空室的一部分周围或附近的螺旋电感器。 提供了用于测量处理属性以产生信号给控制器的传感器，该控制器然后控制改变螺旋电感器位置的机构，从而提高等离子体蚀刻的均匀性。
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公开(公告)号：US20080149597A1
公开(公告)日：2008-06-26
申请号：US11756074
申请日：2007-05-31
申请人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
发明人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
IPC分类号： B44C1/22
CPC分类号： H01J37/32623 , G03F1/80 , H01J37/32724 , H01J2237/2001 , H01J2237/334
摘要： The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.
摘要翻译： 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。
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7.发明申请Method and apparatus for process control in time division multiplexed (TDM) etch processes 有权用于时分复用（TDM）蚀刻工艺中的过程控制的方法和装置公开(公告)号：US20050263485A1
公开(公告)日：2005-12-01
申请号：US11155904
申请日：2005-06-20
申请人： David Johnson , Russell Westerman , Mike Teixeira , Shouliang Lai
发明人： David Johnson , Russell Westerman , Mike Teixeira , Shouliang Lai
IPC分类号： G05D16/20 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/302 , G01R31/00
CPC分类号： G05D16/2013 , H01J37/3244 , H01J37/32449 , H01J37/32935 , H01L21/67253 , Y10T137/2544
摘要： The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure response of the step is evaluated and compared to a desired pressure response. The throttle valve is then positioned through a proportional, integral and derivative controller step to step of the time division multiplexed etch process based on the evaluation to the desired pressure response.
摘要翻译： 本发明提供一种在时分多路复用过程中控制室内的压力的方法。 在时分复用蚀刻工艺的至少一个步骤中，基于开环压力控制算法定位节流阀。 评估该步骤的压力响应并将其与期望的压力响应进行比较。 然后基于对期望的压力响应的评估，节流阀通过比例积分和微分控制器定位到步进到时分复用蚀刻工艺。
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8.发明授权Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes 有权用于在时分多路复用蚀刻工艺中减少高宽比依赖蚀刻的方法和装置公开(公告)号：US07959819B2
公开(公告)日：2011-06-14
申请号：US11159415
申请日：2005-06-23
申请人： Shouliang Lai , David Johnson , Russell Westerman
发明人： Shouliang Lai , David Johnson , Russell Westerman
CPC分类号： H01L21/67253 , H01L21/30655 , H01L22/20
摘要： The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.
摘要翻译： 本发明提供了一种用于减小当通过交替沉积/蚀刻工艺等离子体蚀刻半导体衬底中的深沟槽时观察到的纵横比相关蚀刻的方法和装置。 在交替的沉积/蚀刻工艺期间实时地监测衬底上的多个不同尺寸的特征。 然后，基于从监视器接收的信息，在交替沉积/蚀刻工艺中调整至少一个工艺参数，以实现衬底上至少两个不同尺寸特征的等效蚀刻深度。
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公开(公告)号：US07867403B2
公开(公告)日：2011-01-11
申请号：US11756074
申请日：2007-05-31
申请人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
发明人： Jason Plumhoff , Larry Ryan , John Nolan , David Johnson , Russell Westerman
CPC分类号： H01J37/32623 , G03F1/80 , H01J37/32724 , H01J2237/2001 , H01J2237/334
摘要： The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.
摘要翻译： 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。
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公开(公告)号：US06982175B2
公开(公告)日：2006-01-03
申请号：US10770839
申请日：2004-02-02
申请人： David Johnson , Russell Westerman
发明人： David Johnson , Russell Westerman
IPC分类号： H01L21/302
CPC分类号： H01J37/32963 , H01J37/32935
摘要： An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.
摘要翻译： 一种用于通过以特征处理频率监视所述过程的频谱发射的识别区域来确定时分复用过程的端点的改进方法。 该区域基于在时分复用过程中使用的材料的预期发射光谱来识别。 基于时分复用处理中的步骤的持续时间来确定特征处理频率。 监测光谱幅度的变化表明时分复用过程中的过程的终点和材料层之间的转换。
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