公开(公告)号：US08058181B1

公开(公告)日：2011-11-15

申请号：US12502130

申请日：2009-07-13

申请人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

发明人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  H01J2237/335 ,  H01L21/02063 ,  H01L21/02071

摘要： The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF, generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

摘要翻译： 本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。 在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。 第一等离子体清洁可以包括一个或多个步骤。 在第一次等离子体清洁之后，执行第一次基于HO的清洁。 第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。 在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。 第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。 对于等离子体处理，可以使用RF，产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。 通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。 可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。 可以在低温下进行光刻胶去除。

公开(公告)号：US07390755B1

公开(公告)日：2008-06-24

申请号：US10137096

申请日：2002-05-01

申请人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

发明人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  H01J2237/335 ,  H01L21/02063 ,  H01L21/02071

摘要： The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

摘要翻译： 本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。 在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。 第一等离子体清洁可以包括一个或多个步骤。 在第一次等离子体清洁之后，执行第一次基于HO的清洁。 第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。 在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。 第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。 对于等离子体处理，可以使用RF产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。 通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。 可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。 可以在低温下进行光刻胶去除。

公开(公告)号：US07569492B1

公开(公告)日：2009-08-04

申请号：US12111095

申请日：2008-04-28

申请人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

发明人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  H01J2237/335 ,  H01L21/02063 ,  H01L21/02071

摘要： The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

摘要翻译： 本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。 在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。 第一等离子体清洁可以包括一个或多个步骤。 在第一次等离子体清洁之后，执行第一次基于HO的清洁。 第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。 在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。 第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。 对于等离子体处理，可以使用RF产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。 通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。 可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。 可以在低温下进行光刻胶去除。

公开(公告)号：US5996218A

公开(公告)日：1999-12-07

申请号：US726445

申请日：1996-10-04

申请人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

发明人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

IPC分类号： H02N13/00 ,  H01L21/683 ,  H01R43/00

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T29/49117

摘要： A method of forming an electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 is described. The method comprises the steps of forming a base 22 for supporting a substrate 42. An insulator 26 with an electrode 24 therein, is formed on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is formed either (i) on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

摘要翻译： 描述了形成用于将基板42保持在包含磁通43的处理室40中的静电卡盘20的方法。 该方法包括形成用于支撑基底42的基底22的步骤。在基底22上形成有其中具有电极24的绝缘体26.包含铁磁材料的磁分路34（i）在基底22上形成 ，或（ii）在绝缘体26中，或（iii）直接在基座22的下方并与基座22相邻。

公开(公告)号：US07160813B1

公开(公告)日：2007-01-09

申请号：US10293661

申请日：2002-11-12

申请人： Cindy W. Chen ,  Eddie Chiu ,  Mavis J. Chaboya ,  Yuh-Jia Su

发明人： Cindy W. Chen ,  Eddie Chiu ,  Mavis J. Chaboya ,  Yuh-Jia Su

IPC分类号： H01L21/302

CPC分类号： H01L21/32115 ,  C23F4/00 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32706 ,  H01L21/32137

摘要： A method is disclosed for removing a polysilicon layer from a semiconductor wafer, in which a downstream plasma source is used first to planarize the wafer, removing contours in the polysilicon layer caused by deposition over lithographic features, such as via holes. The planarizing process is followed by exposure to a plasma made by a direct, radio frequency plasma source, which may be in combination with the downstream plasma source, to perform the bulk etching of the polysilicon. The invention can produce planar surface topography after the top layer of the film is removed, in which the residual recess height of the polysilicon plug filling a via hole is less than about about 10 nm.

摘要翻译： 公开了一种用于从半导体晶片去除多晶硅层的方法，其中首先使用下游等离子体源来平坦化晶片，从而通过在光刻特征（例如通孔）上的沉积而去除多晶硅层中的轮廓。 平面化处理之后是暴露于通过直接的射频等离子体源制造的等离子体，该等离子体源可以与下游的等离子体源组合，以进行多晶硅的体积蚀刻。 在除去膜的顶层之后，本发明可以产生平面表面形貌，其中填充通孔的多晶硅塞的残留凹陷高度小于约10nm。

公开(公告)号：US5843277A

公开(公告)日：1998-12-01

申请号：US577645

申请日：1995-12-22

申请人： Haruhiro Harry Goto ,  Yuh-Jia Su ,  Yuen-Kui Wong ,  Kam S. Law

发明人： Haruhiro Harry Goto ,  Yuh-Jia Su ,  Yuen-Kui Wong ,  Kam S. Law

IPC分类号： H05H1/46 ,  C23F4/00 ,  G02F1/1343 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L31/18 ,  H01L21/306

CPC分类号： H01L21/31122 ,  H01L31/1884 ,  G02F1/13439 ,  Y02E10/50

摘要： An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 100 .ANG./min and with a selectivity better than 20 to 1 is disclosed. Chamber pressure is maintained at least as low as 60 mTorr. A reactive gas that includes ethyl iodide C.sub.2 H.sub.5 I) is used alone or in combination with another gas such as O.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.

摘要翻译： 公开了一种RIE方法和装置，用于以单一连续步骤以高于100安培/分钟的速率并且具有优于20比1的选择性蚀刻透明电极（ITO）的材料层。 室压力至少保持在60mTorr以下。 包括乙基碘C2H5I的反应性气体）单独使用或与另一种气体如O 2组合使用。 监测反应产物和/或反应物的等离子体诱导的光发射，以确定有效蚀刻的时间点。

公开(公告)号：US5744049A

公开(公告)日：1998-04-28

申请号：US276750

申请日：1994-07-18

申请人： Graham W. Hills ,  Yuh-Jia Su

发明人： Graham W. Hills ,  Yuh-Jia Su

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/02

CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/3065 ,  Y10S156/915 ,  Y10S438/941

摘要： The invention improves etch uniformity across a silicon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer edge periphery without a concomitant reduction over the wafer center, by diluting the etchant (Chlorine) with a diluent gas which practically does not etch Silicon (e.g., Hydrogen Bromide) near the wafer edge periphery. In a second aspect of the invention, etch rate uniformity is enhanced by more rapidly disassociating Chlorine molecules over the center of the wafer to increase the local etch rate, without a concomitant hastening of Chlorine dissociation near the wafer periphery, by the introduction of an inert gas over the wafer center. In a third aspect of the invention, etch rate uniformity is enhanced by forcing gas flow from the gas distribution plate downward toward the wafer center to provide a greater concentration of Chlorine ions over the wafer center, by reducing the effective diameter of the chamber between the gas distribution plate and the wafer to approximately the diameter of the wafer. In a fourth aspect of the invention, etch rate uniformity is enhanced by reducing RF power near the wafer edge periphery, by reducing the RF pedestal to a diameter substantially less than that of the wafer.

摘要翻译： 本发明改进了RF等离子体蚀刻反应器中硅晶片表面的蚀刻均匀性。 在本发明的第一方面，通过在晶片边缘周围附近减少蚀刻剂物质（例如氯）离子和自由基密度而不会伴随晶片中心的减少，通过用稀释剂稀释蚀刻剂（氯）来增强蚀刻均匀性 实际上不会在晶片边缘周边附近蚀刻硅（例如，溴化氢）的气体。 在本发明的第二方面，通过在晶片中心更快速地分离氯分子来提高蚀刻速率均匀性，以增加局部蚀刻速率，而不会伴随着晶片周边附近的氯离解加速，通过引入惰性 气体在晶圆中心。 在本发明的第三方面中，通过迫使气体从气体分配板向下流向晶片中心来提高蚀刻速率的均匀性，以通过减小在晶片中心之间的腔的有效直径，从而在晶片中心上提供更大浓度的氯离子 气体分配板和晶片大约直到晶片的直径。 在本发明的第四方面，通过将RF基座减小至基本上小于晶片直径的直径，通过减小晶片边缘周边附近的RF功率来增强蚀刻速率均匀性。

公开(公告)号：US5592358A

公开(公告)日：1997-01-07

申请号：US276841

申请日：1994-07-18

申请人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

发明人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

IPC分类号： H02N13/00 ,  H01L21/683

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T29/49117

摘要： An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

摘要翻译： 用于将基板42保持在包含磁通43的处理室40中的静电卡盘20包括具有适于在其上支撑基板42的上表面的基座22。 其中具有电极24的绝缘体26位于基座22上。包括铁磁材料的磁分路器34（i）位于基座22上，或（ii）在绝缘体26中，或（iii）直接在下方， 并且与基座22相邻。

公开(公告)号：US6125788A

公开(公告)日：2000-10-03

申请号：US989282

申请日：1997-12-12

申请人： Graham W. Hills ,  Yuh-Jia Su

发明人： Graham W. Hills ,  Yuh-Jia Su

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/3065 ,  Y10S156/915 ,  Y10S438/941

摘要： The invention improves etch uniformity across a silcon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer edge periphery without a concomitant reduction over the wafer center, by diluting the etchant (Chlorine) with a diluent gas which practically does not etch Silicon (e.g., Hydrogen Bromide) near the wafer edge periphery. In a second aspect of the invention, etch rate uniformity is enhanced by more rapidly disassociating Chlorine molecules over the center of the wafer to increase the local etch rate, without a concomitant hastening of Chlorine dissociation near the wafer periphery, by the introduction of an inert gas over the wafer center. In a third aspect of the invention, etch rate uniformity is enhanced by forcing gas flow from the gas distribution plate downward toward the wafer center to provide a greater concentration of Chlorine ions over the wafer center, by reducing the effective diameter of the chamber between the gas distribution plate and the wafer to approximately the diameter of the wafer. In a fourth aspect of the invention, etch rate uniformity is enhanced by reducing RF power near the wafer edge periphery, by reducing the RF pedestal to a diameter substantially less than that of the wafer.

摘要翻译： 本发明提高了RF等离子体蚀刻反应器中硅衬底晶片表面的蚀刻均匀性。 在本发明的第一方面，通过在晶片边缘周围附近减少蚀刻剂物质（例如氯）离子和自由基密度而不会伴随晶片中心的减少，通过用稀释剂稀释蚀刻剂（氯）来增强蚀刻均匀性 实际上不会在晶片边缘周边附近蚀刻硅（例如，溴化氢）的气体。 在本发明的第二方面，通过在晶片中心更快速地分离氯分子来提高蚀刻速率均匀性，以增加局部蚀刻速率，而不会伴随着晶片周边附近的氯离解加速，通过引入惰性 气体在晶圆中心。 在本发明的第三方面中，通过迫使气体从气体分配板向下流向晶片中心来提高蚀刻速率的均匀性，以通过减小在晶片中心之间的腔的有效直径，从而在晶片中心上提供更大浓度的氯离子 气体分配板和晶片大约直到晶片的直径。 在本发明的第四方面，通过将RF基座减小至基本上小于晶片直径的直径，通过减小晶片边缘周边附近的RF功率来增强蚀刻速率均匀性。

公开(公告)号：US5589002A

公开(公告)日：1996-12-31

申请号：US217467

申请日：1994-03-24

申请人： Yuh-Jia Su

发明人： Yuh-Jia Su

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/3244

摘要： A gas distribution plate for a semiconductor wafer process chamber has a symmetrical pattern of non-circular openings formed therein for the passage of gas therethrough. The smaller axis of the non-circular openings should be at least about 127 .mu.m (5 mils), and preferably at least about 254 .mu.m (10 mils), but less than about 762 .mu.m (30 mils), and preferably less than about 635 .mu.m (25 mils). The larger axis is greater than the smaller axis, preferably at least about 635 .mu.m (25 mils), and most preferably at least about 762 .mu.m (30 mils). At least some of the walls of the non-circular openings are preferably not perpendicular to the plane of the face of the gas distribution plate, but are rather slanted, at an angle of from at least 30.degree. to less than 90.degree., toward the center or axis of the outer face of the circular gas distribution plate which faces the wafer. Arcing on the face of the gas distribution plate may be further inhibited by providing peripheral conductive means on the face of the gas distribution plate electrically connected to grounded or neutral portions of the processing chamber to thereby provide a conductive path for unstable plasma at the surface of the gas distribution plate.

摘要翻译： 用于半导体晶片处理室的气体分配板具有形成在其中用于使气体通过的非圆形开口的对称图案。 非圆形开口的较小轴应至少为约127μm（5密耳），优选至少约254μm（10密耳），但小于约762μm（30密耳），优选较小 比约635亩（25密尔）。 较大的轴大于较小轴，优选至少约635μm（25密耳），最优选至少约762μm（30密耳）。 非圆形开口的至少一些壁优选地不垂直于气体分配板的表面的平面，而是以至少30度至小于90度的角度向着 圆形气体分配板的面向晶片的外表面的中心或轴线。 可以通过在与处理室的接地或中性部分电连接的气体分配板的表面上设置周边导电装置来进一步抑制气体分配板的表面的电流，从而为 气体分配板。