Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof
    3.
    发明授权
    Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof 失效
    电动II / VI半导体元件的接触结构及其制造方法

    公开(公告)号:US06893950B2

    公开(公告)日:2005-05-17

    申请号:US10721065

    申请日:2003-11-24

    摘要: A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distinguished by a relatively great, not purely ohmic specific contact resistance in relation to the II/VI cover layer. The consequentially necessary higher operating voltages result in the unnecessary generation of heat and thus substantially accelerate degradation of the entire laser structure. That effect causes a limitation in terms of the service life of II/VI semiconductor laser diodes. The invention permits the operation of semiconductor laser diodes with lower operating voltages. The II/VI semiconductor laser diodes produced with our invention are distinguished by a longer service life. That permits inter alia commercial use of semiconductor laser diodes in the blue-green spectral range.

    摘要翻译: 用于生产用于电操作的II / VI半导体结构(例如激光二极管)的触点的方法。 迄今用于电操作的II / VI半导体激光器的接触材料钯和金的特征在于相对于II / VI覆盖层相对较大而非纯欧姆的比接触电阻。 因此必要的较高工作电压导致不必要的热量产生,从而基本上加速整个激光器结构的劣化。 这种影响导致了II / VI半导体激光二极管的使用寿命方面的限制。 本发明允许具有较低工作电压的半导体激光二极管的操作。 本发明生产的II / VI半导体激光二极管具有较长的使用寿命。 这允许在蓝 - 绿光谱范围内商业使用半导体激光二极管。

    Device and method for determining pressure fluctuations in a fuel supply system
    5.
    发明授权
    Device and method for determining pressure fluctuations in a fuel supply system 有权
    用于确定燃料供应系统中的压力波动的装置和方法

    公开(公告)号:US07210458B2

    公开(公告)日:2007-05-01

    申请号:US11281712

    申请日:2005-11-16

    IPC分类号: F02M57/02 F02M57/00

    摘要: A device and a method for determining pressure fluctuations in a fuel supply system provide two signal filters to enable determining as much information about pressure fluctuations as possible with minimal sensor use. A sensor signal which is characteristic of a pressure in the area of a fuel injector is filtered using the two filters, which have filter characteristics that differ from one another.

    摘要翻译: 用于确定燃料供应系统中的压力波动的装置和方法提供两个信号滤波器,以使得能够以最小的传感器使用来确定尽可能多的关于压力波动的信息。 使用具有彼此不同的滤波器特性的两个滤波器来对燃料喷射器的区域中的压力特性的传感器信号进行滤波。

    Device and method for determining pressure fluctuations in a fuel supply system
    7.
    发明申请
    Device and method for determining pressure fluctuations in a fuel supply system 有权
    用于确定燃料供应系统中的压力波动的装置和方法

    公开(公告)号:US20060130569A1

    公开(公告)日:2006-06-22

    申请号:US11281712

    申请日:2005-11-16

    IPC分类号: G01M15/09

    摘要: A device and a method for determining pressure fluctuations in a fuel supply system provide two signal filters to enable determining as much information about pressure fluctuations as possible with minimal sensor use. A sensor signal which is characteristic of a pressure in the area of a fuel injector is filtered using the two filters, which have filter characteristics that differ from one another.

    摘要翻译: 用于确定燃料供应系统中的压力波动的装置和方法提供两个信号滤波器,以使得能够以最小的传感器使用来确定尽可能多的关于压力波动的信息。 使用具有彼此不同的滤波器特性的两个滤波器来对燃料喷射器的区域中的压力特性的传感器信号进行滤波。

    Contact structure for an electric II/VI semiconductor component and a method for the production of the same
    8.
    发明授权
    Contact structure for an electric II/VI semiconductor component and a method for the production of the same 失效
    电气II / VI半导体元件的接触结构及其制造方法

    公开(公告)号:US06673641B1

    公开(公告)日:2004-01-06

    申请号:US10111661

    申请日:2002-04-24

    IPC分类号: H01L2100

    摘要: A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distinguished by a relatively great, not purely ohmic specific contact resistance in relation to the II/VI cover layer. The consequentially necessary higher operating voltages result in the unnecessary generation of heat and thus substantially accelerate degradation of the entire laser structure. That effect causes a limitation in terms of the service life of II/VI semiconductor laser diodes. The invention permits the operation of semiconductor laser diodes with lower operating voltages. The II/VI semiconductor laser diodes produced with our invention are distinguished by a longer service life. That permits inter alia commercial use of semiconductor laser diodes in the blue-green spectral range.

    摘要翻译: 用于生产用于电操作的II / VI半导体结构(例如激光二极管)的触点的方法。 迄今用于电操作的II / VI半导体激光器的接触材料钯和金的特征在于相对于II / VI覆盖层相对较大而非纯欧姆的比接触电阻。 因此必要的较高工作电压导致不必要的热量产生,从而基本上加速整个激光器结构的劣化。 这种影响导致了II / VI半导体激光二极管的使用寿命方面的限制。 本发明允许具有较低工作电压的半导体激光二极管的操作。 本发明生产的II / VI半导体激光二极管具有较长的使用寿命。 这允许在蓝 - 绿光谱范围内商业使用半导体激光二极管。