公开(公告)号：US08772757B2

公开(公告)日：2014-07-08

申请号：US12030539

申请日：2008-02-13

申请人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

发明人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

IPC分类号： H01L29/06

CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.

摘要翻译： 提供发光装置和制造发射波长小于360nm，壁塞效率至少为4％的发光装置的方法。 墙壁插头效率可以至少为5％或至少为6％。 还提供了发光装置和制造发射波长小于345nm并具有至少2％壁塞效率的发光装置的方法。 提供发光装置和制造发射波长小于330nm，壁塞效率至少为0.4％的发光器件的方法。 具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率 还提供了在小于约0.35μA/μm2的电流密度下的330nm或更小的峰值输出波长和至少0.3mW的输出功率。 半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

公开(公告)号：US20080142783A1

公开(公告)日：2008-06-19

申请号：US12030539

申请日：2008-02-13

申请人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

发明人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

IPC分类号： H01L33/00 ,  H01L21/329

CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.

摘要翻译： 提供发光装置和制造发射波长小于360nm，壁塞效率至少为4％的发光装置的方法。 墙壁插头效率可以至少为5％或至少为6％。 还提供了发光装置和制造发射波长小于345nm并具有至少2％壁塞效率的发光装置的方法。 提供发光装置和制造发射波长小于330nm，壁塞效率至少为0.4％的发光器件的方法。 具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率 和/或峰值输出波长为330nm以下，输出功率为0.3mW以下，电流密度小于0.35μA/ m 2以下。 半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

公开(公告)号：US20060267043A1

公开(公告)日：2006-11-30

申请号：US11140384

申请日：2005-05-27

申请人： David Emerson ,  Michael Bergmann ,  Amber Abare ,  Kevin Haberern

发明人： David Emerson ,  Michael Bergmann ,  Amber Abare ,  Kevin Haberern

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.

摘要翻译： 提供发光装置和制造发射波长小于360nm，壁塞效率至少为4％的发光装置的方法。 墙壁插头效率可以至少为5％或至少为6％。 还提供了发光装置和制造发射波长小于345nm并具有至少2％壁塞效率的发光装置的方法。 提供发光装置和制造发射波长小于330nm，壁塞效率至少为0.4％的发光器件的方法。 具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率 和/或峰值输出波长为330nm以下，输出功率为0.3mW以下，电流密度小于0.35μA/ m 2以下。 半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

公开(公告)号：US20050045895A1

公开(公告)日：2005-03-03

申请号：US10963666

申请日：2004-10-13

申请人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

发明人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱结构。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0 <= X <1且0 <= Y <1，X 不等于Y.半导体器件可以是具有基于III族氮化物的有源区的发光二极管。 有源区可以是多量子阱有源区。

公开(公告)号：US20080038858A1

公开(公告)日：2008-02-14

申请号：US11875353

申请日：2007-10-19

申请人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

发明人： David Emerson ,  James Ibbetson ,  Michael Bergmann ,  Kathleen Doverspike ,  Michael O'Loughlin ,  Howard Nordby ,  Amber Abare

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱狭窄。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光 二极管与III族氮化物基活性区。 有源区可以是多量子阱有源区。