公开(公告)号：US06808442B1

公开(公告)日：2004-10-26

申请号：US10027947

申请日：2001-12-20

申请人： David Wei ,  Yehiel Gotkis ,  Aleksander Owczarz ,  John M. Boyd ,  Rod Kistler

发明人： David Wei ,  Yehiel Gotkis ,  Aleksander Owczarz ,  John M. Boyd ,  Rod Kistler

IPC分类号： B24B100

CPC分类号： B24B37/20 ,  B24B21/20

摘要： An invention is provided for removal rate profile manipulation during a CMP process. An apparatus of the embodiments of the present invention includes an actuator capable of vertical movement perpendicular to a polishing surface of a polishing pad. The actuator is further capable of flexing the polishing pad independently of a pad support device. Also included in the apparatus is an actuator control mechanism that is in communication with the actuator. The actuator control mechanism is capable of controlling an amount of vertical movement of the actuator, allowing the actuator to provide local flexing of the polishing pad to achieve a particular removal rate profile. The actuator can also be capable of horizontal movement parallel to the polishing surface of the polishing pad.

摘要翻译： 提供了一种用于在CMP处理期间的去除速率轮廓操作的发明。 本发明的实施例的装置包括能够垂直于抛光垫的抛光表面垂直运动的致动器。 致动器还能够独立于衬垫支撑装置使抛光垫挠曲。 该装置中还包括与致动器连通的致动器控制机构。 致动器控制机构能够控制致动器的垂直运动量，从而允许致动器提供抛光垫的局部弯曲以实现特定的去除速率曲线。 致动器还能够平行于抛光垫的抛光表面的水平移动。

公开(公告)号：US06869337B2

公开(公告)日：2005-03-22

申请号：US10770599

申请日：2004-02-03

申请人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

发明人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

IPC分类号： B24B37/04 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

摘要： A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

摘要翻译： 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：US06705930B2

公开(公告)日：2004-03-16

申请号：US09754480

申请日：2001-01-04

申请人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

发明人： John M. Boyd ,  Yehiel Gotkis ,  Rod Kistler

IPC分类号： B24B2900

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

摘要： A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

摘要翻译： 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：US06976906B2

公开(公告)日：2005-12-20

申请号：US10681719

申请日：2003-10-07

申请人： John M. Boyd ,  David Wei ,  Yehiel Gotkis

发明人： John M. Boyd ,  David Wei ,  Yehiel Gotkis

IPC分类号： B24B21/04 ,  B24B37/04 ,  B24B5/00

CPC分类号： B24B21/04 ,  B24B37/32

摘要： A chemical mechanical planarization (CMP) system is provided. The system includes a polishing surface and a platen disposed along an underside of the polishing surface. A retaining ring surrounds the platen. The retaining ring includes a lower annular sleeve and an upper annular sleeve moveably disposed over the lower annular sleeve. A method for reducing a consumption of compressed dry air (CDA) during a chemical mechanical planarization (CMP) operation is also described.

摘要翻译： 提供化学机械平面化（CMP）系统。 该系统包括沿抛光表面的下侧设置的抛光表面和压板。 保持环围绕压板。 保持环包括下环形套筒和可移动地设置在下环形套筒上方的上环形套筒。 还描述了在化学机械平坦化（CMP）操作期间减少压缩干燥空气（CDA）的消耗的方法。

公开(公告)号：US06656024B1

公开(公告)日：2003-12-02

申请号：US10029742

申请日：2001-12-21

申请人： John M. Boyd ,  David Wei ,  Yehiel Gotkis

发明人： John M. Boyd ,  David Wei ,  Yehiel Gotkis

IPC分类号： B24B500

CPC分类号： B24B37/32 ,  B24B21/04

摘要： A retaining ring is provided. The retaining ring includes a lower annular sleeve having a base. The base has an inner sidewall and an outer sidewall extending therefrom. The lower annular sleeve has at least one hole defined therein. An upper annular sleeve is moveably disposed over the lower annular sleeve. The upper annular sleeve has a top, that has at least one hole defined therein. The top has an inner sidewall and an outer sidewall extending therefrom. A method for reducing a consumption of compressed dry air (CDA) during a chemical mechanical planarization (CMP) operation is also described.

摘要翻译： 提供固定环。 保持环包括具有底座的下环形套筒。 底座具有从其延伸的内侧壁和外侧壁。 下环形套筒具有限定在其中的至少一个孔。 上环形套筒可移动地设置在下环形套筒的上方。 上环形套筒具有顶部，其具有限定在其中的至少一个孔。 顶部具有从其延伸的内侧壁和外侧壁。 还描述了在化学机械平坦化（CMP）操作期间减少压缩干燥空气（CDA）的消耗的方法。

公开(公告)号：US06585572B1

公开(公告)日：2003-07-01

申请号：US09644135

申请日：2000-08-22

申请人： Miguel A. Saldana ,  John M. Boyd ,  Yehiel Gotkis ,  Aleksander A. Owczarz

发明人： Miguel A. Saldana ,  John M. Boyd ,  Yehiel Gotkis ,  Aleksander A. Owczarz

IPC分类号： B24B100

CPC分类号： B24B37/20 ,  B24B53/017 ,  H01L21/30625

摘要： A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.

摘要翻译： 提供化学机械抛光（CMP）系统。 载体具有顶表面和底部区域。 载体的顶表面被设计成保持和旋转具有一个或多个待制备的成形层的晶片。 还包括制备头，并且被设计成被施加到小于晶片表面的整个部分的晶片的至少一部分。 优选地，制备头和载体被构造成沿相反方向旋转。 此外，准备头还被配置为在从晶片的中心的方向之一到晶片的边缘并且从晶片的边缘到晶片的中心线性移动的同时振荡，以便于精确控制 从晶片的成形层去除材料。

公开(公告)号：US08069813B2

公开(公告)日：2011-12-06

申请号：US11735984

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C3/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US08485120B2

公开(公告)日：2013-07-16

申请号：US11735987

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C11/00 ,  B05D1/28

CPC分类号： H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：US20080251148A1

公开(公告)日：2008-10-16

申请号：US11735989

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： B01F5/00

CPC分类号： C23C18/1628 ,  Y10T137/87652

摘要： A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

摘要翻译： 化学流体处理系统被定义为向混合歧管的多个流体输入提供多个化学品。 化学流体处理系统包括多个流体再循环回路，用于分别预处理和控制每个化学物质的供应。 每个流体循环回路被定义为对特定的一个化学成分进行脱气，加热和过滤。 混合歧管被定义为混合化学品的数量以形成化学镀溶液。 混合歧管包括连接到供应管线的流体输出。 供电线连接以将化学镀溶液供应到化学镀室内的流体碗。

公开(公告)号：US07179154B1

公开(公告)日：2007-02-20

申请号：US11242705

申请日：2005-10-03

申请人： John M. Boyd ,  Fritz Redeker ,  Jason Ryder ,  Aleksander Owczarz

发明人： John M. Boyd ,  Fritz Redeker ,  Jason Ryder ,  Aleksander Owczarz

IPC分类号： B24B1/00 ,  B24B7/00

CPC分类号： B24B41/067 ,  B24B9/065

摘要： An apparatus for cleaning a semiconductor wafer edge is provided. The apparatus includes a film with an abrasive layer configured to contact the edge surface of a semiconductor substrate coated with a contaminant residue layer. A first reel having the film wound thereon and a second reel for receiving the film fed from the first reel are included. In one embodiment, a third reel configured to force the abrasive layer of the film against the edge surface of the semiconductor substrate so as to create an area of contact between the abrasive layer and the edge surface of the semiconductor substrate; and a pin that protrudes from to the top surface of the third reel. A system and method for cleaning a semiconductor wafer edge are also provided.

摘要翻译： 提供了一种用于清洁半导体晶片边缘的装置。 该装置包括具有研磨层的膜，该研磨层配置成接触涂覆有污染物残留层的半导体衬底的边缘表面。 包括卷绕在其上的薄膜的第一卷轴和用于接收从第一卷轴供给的薄膜的第二卷轴。 在一个实施例中，第三卷轴被配置成迫使膜的研磨层抵靠半导体衬底的边缘表面，以便产生研磨层与半导体衬底的边缘表面之间的接触面积; 以及从第三卷轴的顶面突出的销。 还提供了用于清洁半导体晶片边缘的系统和方法。