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    Medical implants and methods of making medical implants
    5.
    发明授权
    Medical implants and methods of making medical implants 有权
    医疗植入物和制造医疗植入物的方法

    公开(公告)号：US08834913B2

    公开(公告)日：2014-09-16

    申请号：US12648106

    申请日：2009-12-28

    申请人： Wendy J. Shaw ,  Clement R. Yonker ,  John L. Fulton ,  Barbara J. Tarasevich ,  James B. McClain ,  Doug Taylor

    发明人： Wendy J. Shaw ,  Clement R. Yonker ,  John L. Fulton ,  Barbara J. Tarasevich ,  James B. McClain ,  Doug Taylor

    IPC分类号： A61F2/00 ,  A61K31/727

    CPC分类号： A61L31/10 ,  A61K31/727 ,  A61L31/16 ,  A61L2300/42 ,  A61L2400/18

    摘要： A medical implant device having a substrate with an oxidized surface and a silane derivative coating covalently bonded to the oxidized surface. A bioactive agent is covalently bonded to the silane derivative coating. An implantable stent device including a stent core having an oxidized surface with a layer of silane derivative covalently bonded thereto. A spacer layer comprising polyethylene glycol (PEG) is covalently bonded to the layer of silane derivative and a protein is covalently bonded to the PEG. A method of making a medical implant device including providing a substrate having a surface, oxidizing the surface and reacting with derivitized silane to form a silane coating covalently bonded to the surface. A bioactive agent is then covalently bonded to the silane coating. In particular instances, an additional coating of bio-absorbable polymer and/or pharmaceutical agent is deposited over the bioactive agent.

    摘要翻译： 一种具有氧化表面的基底和与氧化表面共价结合的硅烷衍生物涂层的医用植入装置。 生物活性剂与硅烷衍生物涂层共价键合。 一种可植入支架装置，其包括具有氧化表面的支架芯，其具有与其共价键合的硅烷衍生物层。 包含聚乙二醇（PEG）的间隔层与硅烷衍生物层共价键合，蛋白质与PEG共价键合。 一种制造医疗植入装置的方法，包括提供具有表面的基底，氧化表面并与衍生的硅烷反应以形成共价键合到该表面的硅烷涂层。 然后将生物活性剂共价键合到硅烷涂层。 在特定情况下，生物吸收性聚合物和/或药剂的附加涂层沉积在生物活性剂上。

    Medical Implants and Methods of Making Medical Implants
    6.
    发明申请
    Medical Implants and Methods of Making Medical Implants 有权
    医疗植入物和医疗植入物的方法

    公开(公告)号：US20110159069A1

    公开(公告)日：2011-06-30

    申请号：US12648106

    申请日：2009-12-28

    申请人： Wendy J. Shaw ,  Clement R. Yonker ,  John L. Fulton ,  Barbara J. Tarasevich ,  James B. McClain ,  Doug Taylor

    发明人： Wendy J. Shaw ,  Clement R. Yonker ,  John L. Fulton ,  Barbara J. Tarasevich ,  James B. McClain ,  Doug Taylor

    IPC分类号： A61F2/02 ,  A61K31/727 ,  A61K38/16 ,  A61F11/00 ,  A61P43/00

    CPC分类号： A61L31/10 ,  A61K31/727 ,  A61L31/16 ,  A61L2300/42 ,  A61L2400/18

    摘要： A medical implant device having a substrate with an oxidized surface and a silane derivative coating covalently bonded to the oxidized surface. A bioactive agent is covalently bonded to the silane derivative coating. An implantable stent device including a stent core having an oxidized surface with a layer of silane derivative covalently bonded thereto. A spacer layer comprising polyethylene glycol (PEG) is covalently bonded to the layer of silane derivative and a protein is covalently bonded to the PEG. A method of making a medical implant device including providing a substrate having a surface, oxidizing the surface and reacting with derivitized silane to form a silane coating covalently bonded to the surface. A bioactive agent is then covalently bonded to the silane coating. In particular instances, an additional coating of bio-absorbable polymer and/or pharmaceutical agent is deposited over the bioactive agent.

    摘要翻译： 一种具有氧化表面的基底和与氧化表面共价结合的硅烷衍生物涂层的医用植入装置。 生物活性剂与硅烷衍生物涂层共价键合。 一种可植入支架装置，其包括具有氧化表面的支架芯，其具有与其共价键合的硅烷衍生物层。 包含聚乙二醇（PEG）的间隔层与硅烷衍生物层共价键合，蛋白质与PEG共价键合。 一种制造医疗植入装置的方法，包括提供具有表面的基底，氧化表面并与衍生的硅烷反应以形成共价键合到该表面的硅烷涂层。 然后将生物活性剂共价键合到硅烷涂层。 在特定情况下，生物吸收性聚合物和/或药剂的附加涂层沉积在生物活性剂上。

    SYSTEM FOR SELECTIVE DEPOSITIONS OF MATERIALS TO SURFACES AND SUBSTRATES
    7.
    发明申请
    SYSTEM FOR SELECTIVE DEPOSITIONS OF MATERIALS TO SURFACES AND SUBSTRATES 审中-公开
    材料选择性沉积在表面和基材上的系统

    公开(公告)号：US20080245304A1

    公开(公告)日：2008-10-09

    申请号：US12139972

    申请日：2008-06-16

    申请人： Clement R. Yonker ,  Dean W. Matson ,  Daniel J. Gaspar ,  George S. Deverman

    发明人： Clement R. Yonker ,  Dean W. Matson ,  Daniel J. Gaspar ,  George S. Deverman

    IPC分类号： C23C16/00

    CPC分类号： C23C18/02 ,  C23C18/08 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76879

    摘要： A system is described for selectively depositing materials to surfaces at preselected locations and at controlled thicknesses. Materials can be further selectively deposited to sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces, e.g., to fill substrate feature patterns (vias). The invention finds application in such commercial processes as semiconductor chip manufacturing. The system is envisioned to provide alternatives to, or decreased need for, chemical mechanical planarization in semiconductor chip manufacturing.

    摘要翻译： 描述了一种系统，用于选择性地将材料沉积在预选位置和受控厚度的表面上。 可以将材料进一步选择性地沉积到复合或结构硅晶片的子表面，例如用于在硅晶片表面上沉积阻挡膜，例如填充衬底特征图案（通孔）。 本发明可应用于诸如半导体芯片制造的商业工艺中。 该系统被设想为半导体芯片制造中的化学机械平面化提供替代或减少的需求。

    Method and apparatus for selective deposition of materials to surfaces and substrates
    8.
    发明授权
    Method and apparatus for selective deposition of materials to surfaces and substrates 失效
    用于将材料选择性沉积到表面和基底的方法和装置

    公开(公告)号：US07402517B2

    公开(公告)日：2008-07-22

    申请号：US11096346

    申请日：2005-03-31

    申请人： Clement R. Yonker ,  Dean W. Matson ,  Daniel J. Gaspar ,  George S. Deverman

    发明人： Clement R. Yonker ,  Dean W. Matson ,  Daniel J. Gaspar ,  George S. Deverman

    IPC分类号： H01L21/445

    CPC分类号： C23C18/02 ,  C23C18/08 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76879

    摘要： Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing. In particular, selective deposition is envisioned to provide alternatives to, or decrease need for, such processes as Chemical Mechanical Planarization of silicon surfaces in semiconductor chip manufacturing due to selective filling and/or coating of pattern features with metals deposited from liquid, near-critical, or supercritical fluids.

    摘要翻译： 公开了用于将液体，近临界和/或超临界流体选择性和可控地沉积到控制沉积到表面或基底上的材料的位置和/或厚度的基底或表面的方法。 在一个示例性工艺中，金属沉积选择性地填充衬底的特征图案（例如，通孔）。 该方法可以进一步用于控制材料在复合或结构硅晶片的子表面上的沉积，例如用于在硅晶片表面上沉积阻挡膜。 材料包括但不限于覆盖层材料，金属，非金属，层状材料，有机物，聚合物和半导体材料。 本发明可应用于诸如半导体芯片制造的商业工艺中。 特别地，选择性沉积被设想为提供替代或减少对半导体芯片制造中的硅表面的化学机械平面化的过程的选择或减少，这是由于选择性地填充和/或涂覆具有从液体附近的金属附近的金属的图案特征 ，或超临界流体。

    Methods and apparatus for depositing tantalum metal films to surfaces and substrates
    9.
    发明授权
    Methods and apparatus for depositing tantalum metal films to surfaces and substrates 失效
    将钽金属薄膜沉积到表面和基材上的方法和设备

    公开(公告)号：US07482289B2

    公开(公告)日：2009-01-27

    申请号：US11511548

    申请日：2006-08-25

    申请人： Clement R. Yonker ,  Dean W. Matson ,  John T Bays

    发明人： Clement R. Yonker ,  Dean W. Matson ,  John T Bays

    IPC分类号： H01L21/00

    CPC分类号： C23C18/08 ,  C23C18/165 ,  C23C18/1678 ,  C23C18/52

    摘要： Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition involves low valence oxidation state metal precursors soluble in liquid and/or compressible solvent fluids at liquid, near-critical, or supercritical conditions for the mixed precursor solutions. Metal film deposition is effected via thermal and/or photolytic activation of the metal precursors. The invention finds application in fabrication and processing of semiconductor, metal, polymer, ceramic, and like substrates or composites.

    摘要翻译： 公开了用于在下一代溶剂流体中沉积钽金属膜的方法和装置，该衬底和/或沉积表面可用作例如金属种子层。 沉积涉及溶解在用于混合前体溶液的液体，接近临界或超临界条件下的液体和/或可压缩溶剂流体中的低价态氧化态金属前体。 通过金属前体的热和/或光解活化来实现金属膜沉积。 本发明应用于半导体，金属，聚合物，陶瓷等基板或复合材料的制造和加工中。

    Methods and apparatus for depositing tantalum metal films to surfaces and substrates
    10.
    发明申请
    Methods and apparatus for depositing tantalum metal films to surfaces and substrates 失效
    将钽金属薄膜沉积到表面和基材上的方法和设备

    公开(公告)号：US20080050916A1

    公开(公告)日：2008-02-28

    申请号：US11511548

    申请日：2006-08-25

    申请人： Clement R. Yonker ,  Dean W. Matson ,  John T. Bays

    发明人： Clement R. Yonker ,  Dean W. Matson ,  John T. Bays

    IPC分类号： H01L21/44

    CPC分类号： C23C18/08 ,  C23C18/165 ,  C23C18/1678 ,  C23C18/52

    摘要： Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition involves low valence oxidation state metal precursors soluble in liquid and/or compressible solvent fluids at liquid, near-critical, or supercritical conditions for the mixed precursor solutions. Metal film deposition is effected via thermal and/or photolytic activation of the metal precursors. The invention finds application in fabrication and processing of semiconductor, metal, polymer, ceramic, and like substrates or composites.

    摘要翻译： 公开了用于在下一代溶剂流体中沉积钽金属膜的方法和装置，该衬底和/或沉积表面可用作例如金属种子层。 沉积涉及溶解在用于混合前体溶液的液体，接近临界或超临界条件下的液体和/或可压缩溶剂流体中的低价态氧化态金属前体。 通过金属前体的热和/或光解活化来实现金属膜沉积。 本发明应用于半导体，金属，聚合物，陶瓷等基板或复合材料的制造和加工中。