公开(公告)号：US20060255315A1

公开(公告)日：2006-11-16

申请号：US11352124

申请日：2006-02-10

申请人： Deborah Yellowaga ,  Ben Palmer ,  John Starzynski ,  John McFarland ,  Marie Lowe

发明人： Deborah Yellowaga ,  Ben Palmer ,  John Starzynski ,  John McFarland ,  Marie Lowe

IPC分类号： C09K13/00 ,  B44C1/22 ,  C23F1/00

CPC分类号： C11D11/0047 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/30 ,  C11D3/43 ,  C11D7/08 ,  C11D7/265 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/50 ,  C23G1/103 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/3121 ,  H01L21/3124 ,  H01L21/31608 ,  H01L21/31654 ,  H01L21/3185

摘要： Removal chemistry solutions and methods of production thereof are described herein that include at least one fluorine-based constituent, at least one chelating component, surfactant component, oxidizing component or combination thereof, and at least one solvent or solvent mixture. Removal chemistry solutions and methods of production thereof are also described herein that include at least one low H2O content fluorine-based constituent and at least one solvent or solvent mixture.

摘要翻译： 本文描述了除去化学溶液及其生产方法，其包括至少一种氟基组分，至少一种螯合组分，表面活性剂组分，氧化组分或其组合，以及至少一种溶剂或溶剂混合物。 本文还描述了除去化学溶液及其生产方法，其包括至少一种低H 2 O 2 O含量的氟基组分和至少一种溶剂或溶剂混合物。

公开(公告)号：US20060054595A1

公开(公告)日：2006-03-16

申请号：US10938191

申请日：2004-09-10

申请人： John Starzynski

发明人： John Starzynski

IPC分类号： C03C15/00 ,  B44C1/22 ,  C09K13/04

CPC分类号： H01L21/31111 ,  C09K13/08

摘要： An etchant is provided. The etchant includes 0.1 weight percent to 10 weight percent HF; 0 weight percent to 2 weight percent HCl; 0 weight percent to 5 weight percent H2O; and a balance of a solvent less polar than water. In one embodiment, the solvent less polar than water is propylene carbonate. A method of using the etchant is also provided.

摘要翻译： 提供蚀刻剂。 蚀刻剂包括0.1重量％至10重量％的HF; 0重量％至2重量％的HCl; 0重量％至5重量％的H 2 O; 和比水少极性的溶剂的平衡。 在一个实施方案中，比水少极性的溶剂是碳酸亚丙酯。 还提供了使用蚀刻剂的方法。

公开(公告)号：US20050133479A1

公开(公告)日：2005-06-23

申请号：US10739521

申请日：2003-12-19

申请人： Dan Youngner ,  James Detry ,  John Starzynski

发明人： Dan Youngner ,  James Detry ,  John Starzynski

IPC分类号： B01D46/10 ,  B01D46/52 ,  B81C1/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/308 ,  H01L21/768

CPC分类号： B81C1/00547 ,  B81C1/00396 ,  B81C1/00412 ,  H01L21/30604 ,  H01L21/3085

摘要： Equipment and processes for creating a custom sloped etch in a substrate are disclosed. An illustrative process may include the steps of providing a substrate having a surface to be etched, providing a control layer on the surface of the substrate, forming a mask above the control layer, and then selectively etching each of the control layer and substrate at variable rates to form a sloped etch in the substrate.

摘要翻译： 公开了在衬底中形成定制倾斜蚀刻的设备和工艺。 说明性的过程可以包括以下步骤：提供具有待蚀刻表面的衬底，在衬底的表面上提供控制层，在控制层上方形成掩模，然后选择性地蚀刻可变的控制层和衬底 速率以在衬底中形成倾斜蚀刻。

公开(公告)号：US20080110748A1

公开(公告)日：2008-05-15

申请号：US11662245

申请日：2005-03-18

申请人： John Starzynski

发明人： John Starzynski

IPC分类号： C09K13/08 ,  C09K13/04 ,  C09K13/06 ,  C09K13/00 ,  B44C1/22 ,  C23C14/00

CPC分类号： H01L21/31111 ,  C09K13/08

摘要： Etchants for selective removal of high dielectric constant materials are described herein that comprise at least one fluorin-based constituent; water and at least one solvent or solvent mixture. Methods are also described herein for producing a wet etching chemistry solution that include providing at least one fluorine-based constituent, providing water, providing at least one solvent mixture, and combining the fluorine-based constituent and water into the least one solvent or solvent mixture to form the wet etching chemistry solution.

摘要翻译： 本文描述了用于选择性去除高介电常数材料的蚀刻剂，其包含至少一种基于氟的成分; 水和至少一种溶剂或溶剂混合物。 本文还描述了用于生产湿蚀刻化学溶液的方法，其包括提供至少一种氟基组分，提供水，提供至少一种溶剂混合物，并将氟基组分和水混合到至少一种溶剂或溶剂混合物 以形成湿蚀刻化学溶液。

公开(公告)号：US20050065050A1

公开(公告)日：2005-03-24

申请号：US10827011

申请日：2004-04-19

申请人： John Starzynski

发明人： John Starzynski

IPC分类号： C11D7/06 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/306 ,  C11D1/00

CPC分类号： C11D7/06 ,  C11D7/261 ,  C11D7/3209 ,  C11D7/5022 ,  C11D11/0047 ,  H01L21/30608

摘要： Silicon etchants described herein are aqueous solutions that comprise at least one of potassium hydroxide or tetramethyl ammonium hydroxide; at least one additive, wherein the additive comprises at least two of the following physical properties: water-soluble, non-volatile and non-flammable; and an aqueous environment that comprises at least one solvent or solvent blend. Methods of producing a selective silicon etchant include: a) providing at least one of potassium hydroxide or tetramethyl ammonium hydroxide; b) providing at least one additive, wherein the additive comprises at least two of the following physical properties: water-soluble, non-volatile and non-flammable; c) providing an aqueous environment that comprises at least one solvent or solvent blend; and d) blending the at least one potassium hydroxide or tetramethyl ammonium hydroxide with the at least one additive in the aqueous environment in order to form a solution that can be utilized as a selective silicon etchant.

摘要翻译： 本文描述的硅蚀刻剂是包含氢氧化钾或四甲基氢氧化铵中的至少一种的水溶液; 至少一种添加剂，其中所述添加剂包含以下物理性质中的至少两种：水溶性，非挥发性和不可燃的; 和包含至少一种溶剂或溶剂共混物的水性环境。 生产选择性硅蚀刻剂的方法包括：a）提供氢氧化钾或四甲基氢氧化铵中的至少一种; b）提供至少一种添加剂，其中所述添加剂包含以下物理性质中的至少两种：水溶性，非挥发性和不可燃的; c）提供包含至少一种溶剂或溶剂共混物的水性环境; 和d）在水性环境中将至少一种氢氧化钾或四甲基氢氧化铵与至少一种添加剂共混以形成可用作选择性硅蚀刻剂的溶液。