公开(公告)号：US20110227026A1

公开(公告)日：2011-09-22

申请号：US12942575

申请日：2010-11-09

申请人： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer Makala ,  Peter Rabkin ,  Chu-Chen Fu ,  Tong Zhang

发明人： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer Makala ,  Peter Rabkin ,  Chu-Chen Fu ,  Tong Zhang

IPC分类号： H01L47/00 ,  H01L21/00

CPC分类号： H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air brake. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide. Sub-plantation may be used to create a titanium region between two metal oxide regions.

摘要翻译： 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。 可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而不用空气制动。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。 亚种植园可用于在两个金属氧化物区域之间产生钛区域。

公开(公告)号：US08435831B2

公开(公告)日：2013-05-07

申请号：US12942575

申请日：2010-11-09

申请人： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer Makala ,  Peter Rabkin

发明人： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer Makala ,  Peter Rabkin

IPC分类号： H01L21/00

CPC分类号： H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

公开(公告)号：US20110229990A1

公开(公告)日：2011-09-22

申请号：US12842810

申请日：2010-07-23

申请人： Franz Kreupl ,  Deepak C. Sekar

发明人： Franz Kreupl ,  Deepak C. Sekar

IPC分类号： H01L21/66 ,  H01L21/16

CPC分类号： H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

摘要： During the manufacture of a set of non-volatile resistance-switching memory elements, a forming process is performed in which a voltage is applied over forming period until a conductive filament is formed in a resistance-switching layer. A heat source at a temperature of 50° C. to 150° C. is applied to expedite the forming process while reducing the required magnitude of the applied voltage. Manufacturing time and reliability are improved. After the forming process, an expedited training process can be performed in which a fixed number of cycles of voltage pulses are applied without verifying the memory elements. Subsequently, the memory elements are verified by determining their read current in an evaluation. Another fixed number of cycles of voltage pulses is applied without verifying the memory elements, if the memory elements do not pass the evaluation.

摘要翻译： 在一组非易失性电阻切换存储元件的制造期间，进行形成处理，其中在形成周期上施加电压，直到在电阻切换层中形成导电细丝。 施加温度为50℃至150℃的热源以加速成形过程，同时降低施加电压的所需幅度。 制造时间和可靠性得到提高。 在形成处理之后，可以执行加速训练处理，其中施加固定数量的电压脉冲循环，而不验证存储元件。 随后，通过在评估中确定它们的读取电流来验证存储器元件。 如果存储器元件不通过评估，则施加电压脉冲的另一固定数量的循环，而不验证存储器元件。

公开(公告)号：US20110227024A1

公开(公告)日：2011-09-22

申请号：US12842798

申请日：2010-07-23

申请人： Deepak C. Sekar ,  Franz Kreupl

发明人： Deepak C. Sekar ,  Franz Kreupl

IPC分类号： H01L45/00 ,  H01L21/16

CPC分类号： H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

摘要： A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as 10% or greater. Further, the dopant is a cation having a relatively large ionic radius such as 70 picometers or greater, such as Magnesium, Chromium, Calcium, Scandium or Yttrium. A cubic fluorite phase lattice may be formed in the metal oxide even at room temperature so that switching power may be reduced. The memory element may be pillar-shaped, extending between first and second electrodes and being in series with a steering element such as a diode. The metal oxide layer may be deposited at the same time as the dopant. Or, using atomic layer deposition, an oxide of a first metal can be deposited, followed by an oxide of a second metal, followed by annealing to cause intermixing, in repeated cycles.

摘要翻译： 非易失性电阻切换存储元件包括由具有以比较高的浓度（例如10％以上）设置的掺杂剂的金属氧化物层形成的电阻切换元件。 此外，掺杂剂是诸如镁，铬，钙，钪或钇之类的诸如70皮度或更大的离子半径相对较大的阳离子。 即使在室温下也可以在金属氧化物中形成立方萤石相晶格，从而可以降低开关功率。 存储元件可以是柱形的，在第一和第二电极之间延伸并且与诸如二极管的转向元件串联。 金属氧化物层可以与掺杂剂同时沉积。 或者，使用原子层沉积，可沉积第一金属的氧化物，然后沉积第二金属的氧化物，然后在重复循环中进行退火以引起混合。

公开(公告)号：US20110204316A1

公开(公告)日：2011-08-25

申请号：US13029361

申请日：2011-02-17

申请人： Franz Kreupl ,  Deepak C. Sekar

发明人： Franz Kreupl ,  Deepak C. Sekar

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L27/222 ,  H01L27/24 ,  H01L43/08 ,  H01L45/04 ,  H01L45/145

摘要： A memory device in a 3-D read and write memory includes a resistance-changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction between a semiconductor layer and a metal layer. Further, the local contact resistance has a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction. A method for fabricating such a memory device is also presented.

摘要翻译： 3-D读写存储器中的存储器件包括电阻变化层和与电阻变化层串联连接的局部接触电阻。 局部接触电阻由半导体层和金属层之间的接合点构成。 此外，局部接触电阻根据半导体的掺杂浓度和结的势垒高度具有指定的电阻水平。 还提出了一种用于制造这种存储器件的方法。

公开(公告)号：US08487292B2

公开(公告)日：2013-07-16

申请号：US12842798

申请日：2010-07-23

申请人： Deepak C. Sekar ,  Franz Kreupl

发明人： Deepak C. Sekar ,  Franz Kreupl

IPC分类号： H01L47/00

CPC分类号： H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

摘要： A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as 10% or greater. Further, the dopant is a cation having a relatively large ionic radius such as 70 picometers or greater, such as Magnesium, Chromium, Calcium, Scandium or Yttrium. A cubic fluorite phase lattice may be formed in the metal oxide even at room temperature so that switching power may be reduced. The memory element may be pillar-shaped, extending between first and second electrodes and being in series with a steering element such as a diode. The metal oxide layer may be deposited at the same time as the dopant. Or, using atomic layer deposition, an oxide of a first metal can be deposited, followed by an oxide of a second metal, followed by annealing to cause intermixing, in repeated cycles.

摘要翻译： 非易失性电阻切换存储元件包括由具有以比较高的浓度（例如10％以上）设置的掺杂剂的金属氧化物层形成的电阻切换元件。 此外，掺杂剂是诸如镁，铬，钙，钪或钇之类的诸如70皮度或更大的离子半径相对较大的阳离子。 即使在室温下也可以在金属氧化物中形成立方萤石相晶格，从而可以降低开关功率。 存储元件可以是柱形的，在第一和第二电极之间延伸并且与诸如二极管的转向元件串联。 金属氧化物层可以与掺杂剂同时沉积。 或者，使用原子层沉积，可沉积第一金属的氧化物，然后沉积第二金属的氧化物，然后在重复循环中进行退火以引起混合。

公开(公告)号：US08216862B2

公开(公告)日：2012-07-10

申请号：US12842810

申请日：2010-07-23

申请人： Franz Kreupl ,  Deepak C. Sekar

发明人： Franz Kreupl ,  Deepak C. Sekar

IPC分类号： H01L21/06

CPC分类号： H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

摘要： During the manufacture of a set of non-volatile resistance-switching memory elements, a forming process is performed in which a voltage is applied over forming period until a conductive filament is formed in a resistance-switching layer. A heat source at a temperature of 50° C. to 150° C. is applied to expedite the forming process while reducing the required magnitude of the applied voltage. Manufacturing time and reliability are improved. After the forming process, an expedited training process can be performed in which a fixed number of cycles of voltage pulses are applied without verifying the memory elements. Subsequently, the memory elements are verified by determining their read current in an evaluation. Another fixed number of cycles of voltage pulses is applied without verifying the memory elements, if the memory elements do not pass the evaluation.

摘要翻译： 在一组非易失性电阻切换存储元件的制造期间，进行形成处理，其中在形成周期上施加电压，直到在电阻切换层中形成导电细丝。 施加温度为50℃至150℃的热源以加速成形过程，同时降低施加电压的所需幅度。 制造时间和可靠性得到提高。 在形成处理之后，可以执行加速训练处理，其中施加固定数量的电压脉冲循环，而不验证存储元件。 随后，通过在评估中确定它们的读取电流来验证存储器元件。 如果存储器元件不通过评估，则施加电压脉冲的另一固定数量的循环，而不验证存储器元件。

公开(公告)号：US07969011B2

公开(公告)日：2011-06-28

申请号：US12240785

申请日：2008-09-29

申请人： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Er-Xuan Ping ,  Xiying Chen

发明人： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Er-Xuan Ping ,  Xiying Chen

IPC分类号： H01L23/48

CPC分类号： H01L45/00 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/149

摘要： A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arraigned as follows. An insulating region has a trench formed therein. The trench has a bottom and side walls. The first electrode, which comprises a first metal, is on the side walls and over the bottom of the trench. A first insulator has a first interface with the first electrode. At least a portion of the first insulator is within the trench. A second insulator has a second interface with the first insulator. At least a portion of the second insulator is within the trench. The second electrode, which comprises a second metal, is in contact with the second insulator. The second electrode at least partially fills the trench.

摘要翻译： 公开了一种金属绝缘体二极管。 在一个方面，金属绝缘体二极管包括第一和第二电极以及第一和第二绝缘体，如下所述。 绝缘区域中形成有沟槽。 沟槽有一个底部和侧壁。 第一电极包括第一金属，位于沟槽的侧壁和底部的上方。 第一绝缘体具有与第一电极的第一界面。 第一绝缘体的至少一部分在沟槽内。 第二绝缘体具有与第一绝缘体的第二接口。 第二绝缘体的至少一部分在沟槽内。 包括第二金属的第二电极与第二绝缘体接触。 第二电极至少部分地填充沟槽。

公开(公告)号：US20100078759A1

公开(公告)日：2010-04-01

申请号：US12240785

申请日：2008-09-29

申请人： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Er-Xuan Ping ,  Xiying Chen

发明人： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Er-Xuan Ping ,  Xiying Chen

IPC分类号： H01L23/525 ,  H01L21/44

CPC分类号： H01L45/00 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/149

摘要： A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arraigned as follows. An insulating region has a trench formed therein. The trench has a bottom and side walls. The first electrode, which comprises a first metal, is on the side walls and over the bottom of the trench. A first insulator has a first interface with the first electrode. At least a portion of the first insulator is within the trench. A second insulator has a second interface with the first insulator. At least a portion of the second insulator is within the trench. The second electrode, which comprises a second metal, is in contact with the second insulator. The second electrode at least partially fills the trench.

摘要翻译： 公开了一种金属绝缘体二极管。 在一个方面，金属绝缘体二极管包括第一和第二电极以及第一和第二绝缘体，如下所述。 绝缘区域中形成有沟槽。 沟槽有一个底部和侧壁。 第一电极包括第一金属，位于沟槽的侧壁和底部的上方。 第一绝缘体具有与第一电极的第一界面。 第一绝缘体的至少一部分在沟槽内。 第二绝缘体具有与第一绝缘体的第二接口。 第二绝缘体的至少一部分在沟槽内。 包括第二金属的第二电极与第二绝缘体接触。 第二电极至少部分地填充沟槽。

公开(公告)号：US20100078758A1

公开(公告)日：2010-04-01

申请号：US12240766

申请日：2008-09-29

申请人： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Xiying Chen

发明人： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Xiying Chen

IPC分类号： H01L29/861 ,  G11C11/50 ,  H01L21/44

CPC分类号： H01L45/145 ,  H01L27/2418 ,  H01L45/00 ,  H01L45/04 ,  H01L45/06 ,  H01L45/144 ,  H01L45/149

摘要： A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises a first electrode comprising a first metal, a first region comprising a first insulating material, a second region comprising a second insulating material, and a second electrode comprising a second metal. The first region and the second region reside between the first electrode and the second electrode. The second insulating material is doped with nitrogen. Note that the second insulating material may have an interface with either the first electrode or the second electrode.

摘要翻译： 公开了一种金属绝缘体二极管。 在一个方面，金属绝缘体二极管包括第一电极，第一电极包括第一金属，第一区域包括第一绝缘材料，第二区域包括第二绝缘材料，第二电极包括第二金属。 第一区域和第二区域位于第一电极和第二电极之间。 第二绝缘材料掺杂有氮。 注意，第二绝缘材料可以具有与第一电极或第二电极的界面。