FORMING AND TRAINING PROCESSES FOR RESISTANCE-CHANGE MEMORY CELL
    1.
    发明申请
    FORMING AND TRAINING PROCESSES FOR RESISTANCE-CHANGE MEMORY CELL 有权
    电阻变化记忆细胞的形成和培训过程

    公开(公告)号:US20110229990A1

    公开(公告)日:2011-09-22

    申请号:US12842810

    申请日:2010-07-23

    IPC分类号: H01L21/66 H01L21/16

    摘要: During the manufacture of a set of non-volatile resistance-switching memory elements, a forming process is performed in which a voltage is applied over forming period until a conductive filament is formed in a resistance-switching layer. A heat source at a temperature of 50° C. to 150° C. is applied to expedite the forming process while reducing the required magnitude of the applied voltage. Manufacturing time and reliability are improved. After the forming process, an expedited training process can be performed in which a fixed number of cycles of voltage pulses are applied without verifying the memory elements. Subsequently, the memory elements are verified by determining their read current in an evaluation. Another fixed number of cycles of voltage pulses is applied without verifying the memory elements, if the memory elements do not pass the evaluation.

    摘要翻译: 在一组非易失性电阻切换存储元件的制造期间,进行形成处理,其中在形成周期上施加电压,直到在电阻切换层中形成导电细丝。 施加温度为50℃至150℃的热源以加速成形过程,同时降低施加电压的所需幅度。 制造时间和可靠性得到提高。 在形成处理之后,可以执行加速训练处理,其中施加固定数量的电压脉冲循环,而不验证存储元件。 随后,通过在评估中确定它们的读取电流来验证存储器元件。 如果存储器元件不通过评估,则施加电压脉冲的另一固定数量的循环,而不验证存储器元件。

    RESISTANCE-SWITCHING MEMORY CELL WITH HEAVILY DOPED METAL OXIDE LAYER
    2.
    发明申请
    RESISTANCE-SWITCHING MEMORY CELL WITH HEAVILY DOPED METAL OXIDE LAYER 有权
    电阻切换存储单元与重金属氧化物层

    公开(公告)号:US20110227024A1

    公开(公告)日:2011-09-22

    申请号:US12842798

    申请日:2010-07-23

    IPC分类号: H01L45/00 H01L21/16

    摘要: A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as 10% or greater. Further, the dopant is a cation having a relatively large ionic radius such as 70 picometers or greater, such as Magnesium, Chromium, Calcium, Scandium or Yttrium. A cubic fluorite phase lattice may be formed in the metal oxide even at room temperature so that switching power may be reduced. The memory element may be pillar-shaped, extending between first and second electrodes and being in series with a steering element such as a diode. The metal oxide layer may be deposited at the same time as the dopant. Or, using atomic layer deposition, an oxide of a first metal can be deposited, followed by an oxide of a second metal, followed by annealing to cause intermixing, in repeated cycles.

    摘要翻译: 非易失性电阻切换存储元件包括由具有以比较高的浓度(例如10%以上)设置的掺杂剂的金属氧化物层形成的电阻切换元件。 此外,掺杂剂是诸如镁,铬,钙,钪或钇之类的诸如70皮度或更大的离子半径相对较大的阳离子。 即使在室温下也可以在金属氧化物中形成立方萤石相晶格,从而可以降低开关功率。 存储元件可以是柱形的,在第一和第二电极之间延伸并且与诸如二极管的转向元件串联。 金属氧化物层可以与掺杂剂同时沉积。 或者,使用原子层沉积,可沉积第一金属的氧化物,然后沉积第二金属的氧化物,然后在重复循环中进行退火以引起混合。

    Structure And Fabrication Method For Resistance-Change Memory Cell In 3-D Memory
    3.
    发明申请
    Structure And Fabrication Method For Resistance-Change Memory Cell In 3-D Memory 有权
    3-D存储器中电阻变化记忆单元的结构和制作方法

    公开(公告)号:US20110204316A1

    公开(公告)日:2011-08-25

    申请号:US13029361

    申请日:2011-02-17

    IPC分类号: H01L45/00 H01L21/02

    摘要: A memory device in a 3-D read and write memory includes a resistance-changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction between a semiconductor layer and a metal layer. Further, the local contact resistance has a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction. A method for fabricating such a memory device is also presented.

    摘要翻译: 3-D读写存储器中的存储器件包括电阻变化层和与电阻变化层串联连接的局部接触电阻。 局部接触电阻由半导体层和金属层之间的接合点构成。 此外,局部接触电阻根据半导体的掺杂浓度和结的势垒高度具有指定的电阻水平。 还提出了一种用于制造这种存储器件的方法。

    Resistance-switching memory cell with heavily doped metal oxide layer
    4.
    发明授权
    Resistance-switching memory cell with heavily doped metal oxide layer 有权
    具有重掺杂金属氧化物层的电阻切换存储单元

    公开(公告)号:US08487292B2

    公开(公告)日:2013-07-16

    申请号:US12842798

    申请日:2010-07-23

    IPC分类号: H01L47/00

    摘要: A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as 10% or greater. Further, the dopant is a cation having a relatively large ionic radius such as 70 picometers or greater, such as Magnesium, Chromium, Calcium, Scandium or Yttrium. A cubic fluorite phase lattice may be formed in the metal oxide even at room temperature so that switching power may be reduced. The memory element may be pillar-shaped, extending between first and second electrodes and being in series with a steering element such as a diode. The metal oxide layer may be deposited at the same time as the dopant. Or, using atomic layer deposition, an oxide of a first metal can be deposited, followed by an oxide of a second metal, followed by annealing to cause intermixing, in repeated cycles.

    摘要翻译: 非易失性电阻切换存储元件包括由具有以比较高的浓度(例如10%以上)设置的掺杂剂的金属氧化物层形成的电阻切换元件。 此外,掺杂剂是诸如镁,铬,钙,钪或钇之类的诸如70皮度或更大的离子半径相对较大的阳离子。 即使在室温下也可以在金属氧化物中形成立方萤石相晶格,从而可以降低开关功率。 存储元件可以是柱形的,在第一和第二电极之间延伸并且与诸如二极管的转向元件串联。 金属氧化物层可以与掺杂剂同时沉积。 或者,使用原子层沉积,可沉积第一金属的氧化物,然后沉积第二金属的氧化物,然后在重复循环中进行退火以引起混合。

    Forming and training processes for resistance-change memory cell
    6.
    发明授权
    Forming and training processes for resistance-change memory cell 有权
    电阻变化记忆体的形成和训练过程

    公开(公告)号:US08216862B2

    公开(公告)日:2012-07-10

    申请号:US12842810

    申请日:2010-07-23

    IPC分类号: H01L21/06

    摘要: During the manufacture of a set of non-volatile resistance-switching memory elements, a forming process is performed in which a voltage is applied over forming period until a conductive filament is formed in a resistance-switching layer. A heat source at a temperature of 50° C. to 150° C. is applied to expedite the forming process while reducing the required magnitude of the applied voltage. Manufacturing time and reliability are improved. After the forming process, an expedited training process can be performed in which a fixed number of cycles of voltage pulses are applied without verifying the memory elements. Subsequently, the memory elements are verified by determining their read current in an evaluation. Another fixed number of cycles of voltage pulses is applied without verifying the memory elements, if the memory elements do not pass the evaluation.

    摘要翻译: 在一组非易失性电阻切换存储元件的制造期间,进行形成处理,其中在形成周期上施加电压,直到在电阻切换层中形成导电细丝。 施加温度为50℃至150℃的热源以加速成形过程,同时降低施加电压的所需幅度。 制造时间和可靠性得到提高。 在形成处理之后,可以执行加速训练处理,其中施加固定数量的电压脉冲循环,而不验证存储元件。 随后,通过在评估中确定它们的读取电流来验证存储器元件。 如果存储器元件不通过评估,则施加电压脉冲的另一固定数量的循环,而不验证存储器元件。

    NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME
    7.
    发明申请
    NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME 有权
    具有金属氧化物切换元件的非挥发性储存及其制造方法

    公开(公告)号:US20110227026A1

    公开(公告)日:2011-09-22

    申请号:US12942575

    申请日:2010-11-09

    IPC分类号: H01L47/00 H01L21/00

    摘要: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air brake. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide. Sub-plantation may be used to create a titanium region between two metal oxide regions.

    摘要翻译: 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料(例如,重掺杂的Si,W,WN)来形成。 可以将陷阱钝化材料(例如,氟,氮,氢,氘)并入到可逆电阻率切换元件的底部电极,金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积(未反应的)钛并原位沉积二氧化钛而不用空气制动。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。 亚种植园可用于在两个金属氧化物区域之间产生钛区域。

    Punch-through diode steering element
    10.
    发明授权
    Punch-through diode steering element 有权
    穿通二极管转向元件

    公开(公告)号:US08575715B2

    公开(公告)日:2013-11-05

    申请号:US13571100

    申请日:2012-08-09

    IPC分类号: H01L29/66

    摘要: A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device.

    摘要翻译: 描述了一种用于形成使用穿通二极管作为与可逆电阻率切换元件串联的转向元件的存储系统的存储系统和方法。 穿通二极管允许交叉点存储器阵列的双极性操作。 穿通二极管可具有对称的非线性电流/电压关系。 穿通二极管在选择的电池的高偏压下具有高电流,对于未选择的电池,在低偏压下具有低泄漏电流。 因此,它与具有电阻式开关元件的交叉点存储器阵列中的双极开关兼容。 穿通二极管可以是N + / P- / N +器件或P + / N- / P +器件。