摘要:
MOSFET structures are frequently used to establish the charge level in the first potential well of a CCD in accordance with an external voltage. When employed conventionally there exists a finite amount of charge under the MOSFET gate at the instant of turnoff. An indeterminate amount of this charge flows into the first potential well thereby giving rise to an uncertainty in the amount of charge in the well. Use of the invention disclosed eliminates this source of uncertainty.
摘要:
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.
摘要:
Disclosed is a programmable convolver utilizing charge transfer devices. The convolver consists of a signal transform unit, a multiplier unit, and an inverse signal transform unit. The transform unit receives selected segments of successive samples of an input signal, and performs a chirp Z transform without post-multiplication on the samples. The multiplier unit forms product signals from the transformed samples and an arbitrary complex signal H(kw.sub.p). The inverse transform unit receives the product signals and performs an inverse chirp Z transform without pre-multiplication. Digital or analog transfer function generators may be included as part of the programmable convolver to generate the signal H(kw.sub.p).
摘要:
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.
摘要:
Homomorphic speech processing apparatus utilizing CCD implementation of the CZT algorithm for performing DFT and IDFT operations in extracting representations of formants and/or pitch data from sampled speech inputs. Embodiments also are described for performing the DFT and IDFT operations (a) by generating n-transforms and averaging the result and (b) for performing a sliding CZT transform. In a further embodiment, a smoothed spectrum of vocal tract data is obtained using a CCD filter with a low pass response. The CCD implementation includes transversal filters employing split-electrode signal amplitude weighting.
摘要:
A charge transfer device comprising a time demultiplexer for separating in time, segments of a signal, such as a return radar video, and filtering the output from each time segment in order to a) reject zero doppler clutter or b) determine the frequency of the principal signal present indicative of the doppler shift of a related target within that time segment.
摘要:
A charge transfer device comprising a time demultiplexer for separating in time, segments of a signal, such as a return radar video, and filtering the output from each time segment in order to a) reject zero doppler clutter or b) determine the frequency of the principal signal present indicative of the doppler shift of a related target within that time segment.