公开(公告)号：US08092862B2

公开(公告)日：2012-01-10

申请号：US12895678

申请日：2010-09-30

申请人： Deok Sin Kil ,  Kwon Hong ,  Seung Jin Yeom

发明人： Deok Sin Kil ,  Kwon Hong ,  Seung Jin Yeom

IPC分类号： C23C16/00

CPC分类号： C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31641 ,  H01L27/10814 ,  H01L28/40

摘要： Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielectric film includes: forming a zirconium dioxide (ZrO2) layer over a wafer in a predetermined thickness that does not allow continuous formation of the ZrO2 layer; and forming an aluminum oxide (Al2O3) layer over portions of the wafer where the ZrO2 layer is not formed, in a predetermined thickness that does not allow continuous formation of the Al2O3 layer.

摘要翻译： 提供一种在半导体器件中形成电介质膜的方法，其中该方法可以改善介电特性和漏电流特性。 根据本发明的具体实施方案，形成电介质膜的方法包括：在不允许连续形成ZrO 2层的预定厚度的晶片上形成二氧化锆（ZrO 2）层; 并且在没有形成ZrO 2层的晶片的部分上形成氧化铝（Al 2 O 3）层，其厚度不能连续地形成Al 2 O 3层。

公开(公告)号：US07037801B1

公开(公告)日：2006-05-02

申请号：US11122834

申请日：2005-05-05

申请人： Kwon Hong ,  Deok Sin Kil

发明人： Kwon Hong ,  Deok Sin Kil

IPC分类号： H01L21/8242

CPC分类号： C23C16/45525 ,  C23C16/405 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31645 ,  H01L28/40

摘要： Disclosed is a method for forming a capacitor of a semiconductor device, which can ensure charging capacity required as well as an excellent leakage current characteristic. In such a method, a storage electrode consisting of TiN is formed on a semiconductor substrate. Then, a first HfO2 thin film, an HfxAlyOz thin film and a second HfO2 thin film are successively deposited on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film. Finally, a plate electrode consisting of TiN is formed on the HfO2/HfxAlyOz/HfO2 dielectric film.

摘要翻译： 公开了一种用于形成半导体器件的电容器的方法，其可以确保所需的充电容量以及优异的漏电流特性。 在这种方法中，在半导体衬底上形成由TiN组成的存储电极。 然后，使用原子层沉积（ALD）工艺在存储电极上依次沉积第一HfO 2薄膜，Hf x Al y O z薄膜和第二HfO 2薄膜，形成HfO 2 / Hf x Al y O z / HfO 2电介质薄膜。 最后，在HfO 2 / Hf x Al y O z / HfO 2电介质膜上形成由TiN组成的平板电极。

公开(公告)号：US07259059B2

公开(公告)日：2007-08-21

申请号：US11122597

申请日：2005-05-05

申请人： Deok Sin Kil ,  Ki Seon Park ,  Jae Sung Roh ,  Hyun Chul Sohn

发明人： Deok Sin Kil ,  Ki Seon Park ,  Jae Sung Roh ,  Hyun Chul Sohn

IPC分类号： H01L21/8242

CPC分类号： H01L21/02194 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/40

摘要： Disclosed is a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic in applying HfxAlyOz as a dielectric film. In such a method, HfxAlyOz thin films are deposited on a storage electrode to form an HfxAlyOz dielectric film and a plate electrode is formed on the dielectric film. The HfxAlyOz dielectric film consists of laminated HfxAlyOz thin films which are different in compositions of Hf and Al such that the lower HfxAlyOz thin film adjoining the storage electrode has a larger composition ratio of Al than that of Hf and the upper HfxAlyOz thin film has a larger composition ratio of Hf than that of Al, and the upper HfxAlyOz thin film is subjected to heat treatment under an oxygen atmosphere after its deposition.

摘要翻译： 公开了一种用于形成半导体器件的电容器的方法，其可以改善施加Hf x Al y O z作为电介质膜的漏电流特性。 在这种方法中，Hf x Al y O z薄膜沉积在存储电极上以形成Hf x Al y O z电介质膜，并且在电介质膜上形成平板电极。 Hf x Al y O z电介质膜由Hf和Al组成不同的层叠Hf x Al y O z薄膜组成，使得邻近存储电极的下部Hf x Al y O z薄膜具有比Hf组成更高的Al的组成比，并且上部Hf x Al y O z薄膜具有较大的 Hf的组成比高于Al，上层Hf x Al y O z薄膜在沉积后在氧气氛下进行热处理。

公开(公告)号：US20060094199A1

公开(公告)日：2006-05-04

申请号：US11122597

申请日：2005-05-05

申请人： Deok Sin Kil ,  Ki Seon Park ,  Jae Sung Roh ,  Hyun Chul Sohn

发明人： Deok Sin Kil ,  Ki Seon Park ,  Jae Sung Roh ,  Hyun Chul Sohn

IPC分类号： H01L21/20 ,  H01L21/8242

CPC分类号： H01L21/02194 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/40

摘要： Disclosed is a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic in applying HfxAlyOz as a dielectric film. In such a method, HfxAlyOz thin films are deposited on a storage electrode to form an HfxAlyOz dielectric film and a plate electrode is formed on the dielectric film. The HfxAlyOz dielectric film consists of laminated HfxAlyOz thin films which are different in compositions of Hf and Al such that the lower HfxAlyOz thin film adjoining the storage electrode has a larger composition ratio of Al than that of Hf and the upper HfxAlyOz thin film has a larger composition ratio of Hf than that of Al, and the upper HfxAlyOz thin film is subjected to heat treatment under an oxygen atmosphere after its deposition.

摘要翻译： 公开了一种用于形成半导体器件的电容器的方法，其可以改善施加Hf x Al y O z作为电介质膜的漏电流特性。 在这种方法中，Hf x Al y O z薄膜沉积在存储电极上以形成Hf x Al y O z电介质膜，并且在电介质膜上形成平板电极。 Hf x Al y O z电介质膜由Hf和Al组成不同的层叠Hf x Al y O z薄膜组成，使得邻近存储电极的下部Hf x Al y O z薄膜具有比Hf组成更高的Al的组成比，并且上部Hf x Al y O z薄膜具有较大的 Hf的组成比高于Al，上层Hf x Al y O z薄膜在沉积后在氧气氛下进行热处理。

公开(公告)号：US06645805B2

公开(公告)日：2003-11-11

申请号：US10331271

申请日：2002-12-30

申请人： Deok Sin Kil

发明人： Deok Sin Kil

IPC分类号： H01L218242

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/02197 ,  H01L21/31683 ,  H01L21/31691

摘要： A method for forming a dielectric film of a capacitor includes injecting a first source containing a first component into a reaction chamber to be adsorbed on a surface of a substrate, purging residual first source out of the reaction chamber, injecting a mixed gas of Ar and O2 in plasma state into the reaction chamber to react with the first component adsorbed on the substrate, purging by-products and residual gas out of the reaction chamber, injecting a second source containing a second component into the reaction chamber to be adsorbed to the surface of the resulting structure, purging residual second source out of the reaction chamber, injecting a mixed gas of Ar and O2 in plasma state into the reaction chamber to induce oxidation reaction and purging residual gas and by-products out of the reaction chamber using mixed gas of Ar and O2 for obtaining sufficient capacitance for highly integrated semiconductor devices.