Apparatus for coating three dimensional substrates by means of cathode
sputtering
    1.
    发明授权
    Apparatus for coating three dimensional substrates by means of cathode sputtering 失效
    用于通过阴极溅射涂覆三维基板的装置

    公开(公告)号:US5022978A

    公开(公告)日:1991-06-11

    申请号:US548299

    申请日:1990-07-05

    IPC分类号: C23C14/35 C23C14/50 H01J37/34

    摘要: A device for coating substrates has a rectangular magnetron cathode 2 with a target, a substrate holder 16 that can be rotated around a rotating axis 17 which is parallel to the longitudinal edges of the target, a planar wall 20 made of a non-magnetic material and having longitudinal edges 21, 22 also parallel to the rotating axis 17. Behind the wall there is a magnet arrangement and the magnetron cathode 2 and the wall 20 are disposed on opposite sides of the rotating axis. The device further includes a planar anode. In order to intensify and the effect of the plasma and render it more uniform, the distance on the substrate path between the longitudinal edges 12, 13 of the target and the longitudinal edges 21, 22 of the wall parallel thereto is reduced by at least one additional wall 25, 26 with a magnet arrangement 27, 28 disposed therebehind. Further, the poles of all the magnet arrangements 23, 27, 28 alternate on the circumference of the substrate holder 16 such that the entire circumference of the substrate holder is surrounded by an uninterrupted series of magnetic tunnels.

    摘要翻译: 用于涂布基板的装置具有带靶的矩形磁控管阴极2,可以围绕平行于靶的纵向边缘的旋转轴线17旋转的基板保持器16,由非磁性材料制成的平面壁20 并且具有也平行于旋转轴线17的纵向边缘21,22。在壁之后存在磁体布置,并且磁控管阴极2和壁20设置在旋转轴线的相对侧上。 该装置还包括平面阳极。 为了加强等离子体的作用并使其更加均匀,靶材的纵向边缘12,13与平行于其的壁的纵向边缘21,22之间的基板路径上的距离减小了至少一个 另外的壁25,26具有设置在其上的磁体布置27,28。 此外,所有磁体布置23,27,28的磁极在基板保持器16的圆周上交替,使得基板保持器的整个圆周被不间断的一系列磁性通道包围。

    Multilayer Ti-Al-N coating for tools
    2.
    发明授权
    Multilayer Ti-Al-N coating for tools 失效
    多层Ti-Al-N涂层用于工具

    公开(公告)号:US5330853A

    公开(公告)日:1994-07-19

    申请号:US747287

    申请日:1991-08-19

    IPC分类号: C23C14/00 C23C14/06 B23B51/00

    摘要: Surface coating includes alternating first and second ternary layers, wherein the first layer TiAlN.sub.x has a higher nitrogen content and is considerably thinner than the second layer TiAlNy. The first layer is preferably applied by decreasing the nitrogen content of a reactive atmosphere from a maximum to a minimum during sputtering of a TiAl target. The second layer is then applied by sputtering the TiAl target over a longer period of time while the nitrogen content is maintained constant at the minimum. When a further first layer is applied, the nitrogen is again increased to the maximum.

    摘要翻译: 表面涂层包括交替的第一和第二三元层,其中第一层TiAlN x具有较高的氮含量并且比第二层TiAlNy薄得多。 优选通过在TiAl靶的溅射期间将反应性气氛的氮含量从最大值降至最低来应用第一层。 然后通过在较长时间内溅射TiAl靶来施加第二层,同时氮含量保持恒定在最小值。 当施加另外的第一层时,氮再次增加到最大。

    Method and apparatus for etching substrates with a magnetic-field
supported low-pressure discharge
    3.
    发明授权
    Method and apparatus for etching substrates with a magnetic-field supported low-pressure discharge 失效
    用磁场支持的低压放电来蚀刻基板的方法和装置

    公开(公告)号:US4911784A

    公开(公告)日:1990-03-27

    申请号:US290149

    申请日:1988-12-23

    IPC分类号: C23F4/00 H01J37/32

    摘要: An etching method whereby a sufficiently high etching rate is attained, in a uniform surface treatment that is very gentle on projecting edges of the substrates. Also the substrates are held at or brought to a sufficiently high temperature by the etching process. The method for etching substrates with a magnetic-field supported low-pressure discharge is characterized in that the magnetic field is decoupled from the substrates such that the magnetic field strength at the substrates is less than 6000 A/m. In the space between the substrates and the magnet system at least one electron emitter is disposed at a location at which a magnetic field strength is present that is greater than the field strength at the substrates but equal to or less than 12,000 A/m. On the side of the substrates facing away from the at least one electron emitter, at least one anode is disposed with an anode potential of +10 to +250 V with respect to ground. An etching potential between -100 V and -1000 V with respect to ground is applied to the substrates. The ratio of the gaps between the substrates and the surfaces of the substrates projected onto a projection plane carried through the gaps amounts to at least 0.1. The potential difference between the at least one emitter and the at least one anode is selected so high that an electron current (primary and secondary electrons) flows through the substrate gaps to the anode.

    摘要翻译: 在对基板的突出边缘进行非常柔和的均匀的表面处理中,可获得足够高的蚀刻速率的蚀刻方法。 此外,通过蚀刻工艺将基板保持在或达到足够高的温度。 利用磁场支持的低压放电来蚀刻衬底的方法的特征在于,磁场与衬底分离,使得衬底的磁场强度小于6000A / m。 在基板和磁体系统之间的空间中,至少一个电子发射器设置在比基板处的场强大于等于或小于12,000A / m的磁场强度存在的位置处。 在基板背离该至少一个电子发射器的一侧,至少一个阳极设置成相对于地面为+ 10至+250V的阳极电位。 在基板上施加相对于地面的-100V和-1000V之间的蚀刻电位。 投影到穿过间隙的投影平面上的基板和基板的表面之间的间隙的比率至少为0.1。 至少一个发射极和至少一个阳极之间的电势差被选择得很高,使得电子电流(一次电子和二次电子)流过衬底间隙到达阳极。

    Master for the duplication of sound recordings and process for its
production
    4.
    发明授权
    Master for the duplication of sound recordings and process for its production 失效
    硕士重要的录音和制作过程

    公开(公告)号:US5667658A

    公开(公告)日:1997-09-16

    申请号:US617505

    申请日:1996-03-15

    摘要: A plate made of silicate glass (glass master) (3) is provided with a pressing surface (surface coat) carrying the sound recording in the form of raised contours formed from a photoresist (5) with a layer of primer (adhesion promotor) (4) to hold the photoresist layer (5) to the glass plate (3). A first metal layer (6) is deposited on the photoresist (5) from a sputter target which consists of a NiV alloy; and a protective layer (7) of nickel is electrolytically deposited on the first layer. The metal master (8) consisting of first layer (6) and protective layer (7) is pulled from the photoresist layer (5).

    摘要翻译: 由硅酸盐玻璃(玻璃母版)(3)制成的板设置有承载由光致抗蚀剂(5)形成的凸起轮廓形式的声音记录的按压表面(表面涂层),其具有底漆层(粘合促进剂)( 4)将光致抗蚀剂层(5)保持在玻璃板(3)上。 第一金属层(6)由NiV合金构成的溅射靶沉积在光致抗蚀剂(5)上; 并且在第一层上电解沉积镍的保护层(7)。 由第一层(6)和保护层(7)构成的金属母板(8)从光刻胶层(5)拉出。

    Apparatus for the production of exposed and metallized substrates
    5.
    发明授权
    Apparatus for the production of exposed and metallized substrates 失效
    用于生产暴露和金属化基板的装置

    公开(公告)号:US6023042A

    公开(公告)日:2000-02-08

    申请号:US827479

    申请日:1996-10-04

    IPC分类号: G11B7/26 B23K26/00

    CPC分类号: G11B7/26 G11B7/261

    摘要: A disc lacquering station, a laser beam recorder, a developing station and a metallizer are arranged in tandem. A cassette station (7) for the intermediate storage of substrates precedes and another follows the laser beam recorder. The cassette station (7) has a fixedly installed buffer magazine (9) for substrates and an extra magazine (10), removable from the apparatus, for additional substrates. In this manner substrates can be taken with the extra magazine from the cassette station preceding the laser beam recorder, recorded on a separate laser beam recorder, and then air-locked back into the production apparatus.

    摘要翻译: 串联设置圆盘涂漆台,激光束记录器,显影台和金属化器。 用于衬底的中间存储的盒式磁带站(7)先于激光束记录器。 盒式站(7)具有用于基板的固定安装的缓冲箱(9)和用于附加基板的可从该设备移除的附加盒(10)。 以这种方式,可以利用来自激光束记录器之前的盒式磁带站的额外磁带盒记录衬底,记录在单独的激光束记录器上,然后气密地回到制造装置中。

    Apparatus for laser exposure of a substrate disk and a method for the
centered mounting of a substrate disk
    7.
    发明授权
    Apparatus for laser exposure of a substrate disk and a method for the centered mounting of a substrate disk 失效
    用于基板盘的激光曝光的装置和用于基板盘的中心安装的方法

    公开(公告)号:US5777979A

    公开(公告)日:1998-07-07

    申请号:US753796

    申请日:1996-11-27

    CPC分类号: G11B7/26

    摘要: A vertically disposed drive spindle (5) rotates turntable (6) supporting a substrate (7) at high speed, the turntable having a smaller diameter than the substrate. Coaxial with the turntable (6), a centering ring (10) having a frustoconical inside surface can be raised vertically between a lower and upper position. The latter has on its upper side a greater diameter and on its lower side a smaller diameter than the substrate (7). In its lower position the centering ring (10) is at a distance from a substrate (7) lying on the turntable (6), but in its upper position its inside surface supports the substrate (7) at an axial distance above turntable (6).

    摘要翻译: 垂直设置的驱动主轴(5)以高速旋转支撑基板(7)的转盘(6),该转盘具有比该基板更小的直径。 与转盘(6)同轴,具有截头圆锥形内表面的定心环(10)可以在下部和上部位置之间垂直地升高。 后者在其上侧具有更大的直径,并且在其下侧具有比衬底(7)更小的直径。 在其较低位置,定心环(10)距离位于转盘(6)上的基板(7)一定距离,但是在其上部位置,其内表面在转台(6)之上的轴向距离处支撑基板(7) )。

    Process for equipment to coat tools for machining and forming techniques
with mechanically resistant layers
    8.
    发明授权
    Process for equipment to coat tools for machining and forming techniques with mechanically resistant layers 失效
    用于加工机械加工和成型技术的设备的机械加工层

    公开(公告)号:US4871434A

    公开(公告)日:1989-10-03

    申请号:US896936

    申请日:1986-08-15

    摘要: Process and apparatus for coating a tool with a layer of a compound which contains at least one of carbon and nitrogen and at least one of titanium, zirconium, chromium, tungsten, tantalum, vanadium, niobium, hafnium and molybdenum. The apparatus includes a vacuum chamber and a substrate holder for accommodating at least one tool with the substrate holder at a bias of between -40 and -200 V relative to ground. The apparatus includes at least two magnetron sputtering cathodes disposed in mirror symmetry to the substrate holder. The target contains at least one metal selected from the group consisting of T, Zr, Cr, W, Ta, V, Nb, Hf and Mo. The apparatus includes at least one gas source for supplying the vacuum chamber with a noble gas and a reaction gas. The reaction gas contains at least one of nitrogen and a gaseous carbon compound. The apparatus includes at least one anode in the edge region of each target so that the anodes are positioned in mirror symmetry with respect to the target holder. Each of the anodes is connected to a voltage means for applying a voltage of +10 to +200 V relative to ground.

    摘要翻译: 用于涂覆具有包含碳和氮中的至少一种以及钛,锆,铬,钨,钽,钒,铌,铪和钼中的至少一种的化合物的工具的工艺和设备。 该装置包括真空室和衬底保持器,用于以相对于地面在-40和-200V之间的偏压容纳具有衬底保持器的至少一个工具。 该装置包括至少两个设置成与衬底保持器成镜像对称的磁控溅射阴极。 靶包含选自由T,Zr,Cr,W,Ta,V,Nb,Hf和Mo组成的组中的至少一种金属。该装置包括用于向真空室供给稀有气体和 反应气体。 反应气体含有氮和气态碳化合物中的至少一种。 该装置包括在每个靶的边缘区域中的至少一个阳极,使得阳极相对于靶保持器以镜对称的方式定位。 每个阳极连接到相对于地面施加+ 10至+ 200V的电压的电压装置。