公开(公告)号：US07294864B2

公开(公告)日：2007-11-13

申请号：US10925934

申请日：2004-08-26

申请人： Dong Joon Kim ,  Hyun Kyung Kim

发明人： Dong Joon Kim ,  Hyun Kyung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44

摘要： A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.

摘要翻译： 倒装芯片型氮化物半导体发光二极管包括用于生长氮化物单晶的透光基板; 形成在所述透光性基板上的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在所述p型氮化物半导体层上并且具有其中露出所述p型氮化物半导体层的多个开放区域的网状结构的网状电介质层; 形成在网状介电层上的高反射欧姆接触层和露出p型氮化物半导体层的开放区域; 以及分别形成在高反射欧姆接触层和n型氮化物半导体层上的p型接合电极和n电极。

公开(公告)号：US07173288B2

公开(公告)日：2007-02-06

申请号：US11053906

申请日：2005-02-10

申请人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

发明人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

IPC分类号： H01L29/22

CPC分类号： H01L27/15 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.

摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。

公开(公告)号：US08525196B2

公开(公告)日：2013-09-03

申请号：US13090757

申请日：2011-04-20

申请人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

发明人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

摘要翻译： 氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

公开(公告)号：US07977134B2

公开(公告)日：2011-07-12

申请号：US11543798

申请日：2006-10-06

申请人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

发明人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

摘要翻译： 氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

公开(公告)号：US07994525B2

公开(公告)日：2011-08-09

申请号：US12967558

申请日：2010-12-14

申请人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

发明人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

IPC分类号： H01L33/06

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

公开(公告)号：US07893447B2

公开(公告)日：2011-02-22

申请号：US12153842

申请日：2008-05-27

申请人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

发明人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

摘要翻译： 氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

公开(公告)号：US20110193060A1

公开(公告)日：2011-08-11

申请号：US13090757

申请日：2011-04-20

申请人： Hyuk Min LEE ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

发明人： Hyuk Min LEE ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

IPC分类号： H01L33/32 ,  H01L33/06

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

摘要翻译： 氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

公开(公告)号：US20110084305A1

公开(公告)日：2011-04-14

申请号：US12967558

申请日：2010-12-14

申请人： Hyuk Min LEE ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

发明人： Hyuk Min LEE ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

公开(公告)号：US20080224168A1

公开(公告)日：2008-09-18

申请号：US12153842

申请日：2008-05-27

申请人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

发明人： Hyuk Min Lee ,  Hyun Kyung Kim ,  Dong Joon Kim ,  Hyoun Soo Shin

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

摘要翻译： 氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

公开(公告)号：US20130037758A1

公开(公告)日：2013-02-14

申请号：US13635872

申请日：2011-04-20

申请人： Kwang Bum Kim ,  Hyun Kyung Kim ,  Ji Young Kim

发明人： Kwang Bum Kim ,  Hyun Kyung Kim ,  Ji Young Kim

IPC分类号： H01M4/485 ,  H01M4/52 ,  H01M4/04 ,  H01M4/48 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： H01M4/485 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  H01M4/366 ,  H01M4/525 ,  H01M4/587 ,  H01M4/625 ,  H01M10/052 ,  Y02P70/54

摘要： Provided is a method of preparing a complex of a transition metal oxide and carbon nanotube. The method includes (a) dispersing carbon nanotube powder in a solvent, (b) mixing the dispersion with a transition metal salt, and (c) synthesizing a complex of transition metal oxide and carbon nanotube by applying microwave to the mixed solution. The method may considerably reduce the time required to synthesize the complex. In the complex of transition metal oxide and carbon nanotube prepared by the method, the transition metal oxide may be stacked on the surface of the carbon nanotube in the size of a nanoparticle, and may enhance charge/discharge characteristics when being applied to a lithium secondary battery as an anode material.

摘要翻译： 提供了制备过渡金属氧化物和碳纳米管的络合物的方法。 该方法包括（a）将碳纳米管粉末分散在溶剂中，（b）将分散体与过渡金属盐混合，（c）通过向混合溶液中施加微波合成过渡金属氧化物和碳纳米管的络合物。 该方法可以大大减少合成复合物所需的时间。 在通过该方法制备的过渡金属氧化物和碳纳米管的复合物中，过渡金属氧化物可以以纳米颗粒的尺寸堆叠在碳纳米管的表面上，并且可以在施加到锂二次体时增强充电/放电特性 电池作为阳极材料。