公开(公告)号：US20130037758A1

公开(公告)日：2013-02-14

申请号：US13635872

申请日：2011-04-20

申请人： Kwang Bum Kim ,  Hyun Kyung Kim ,  Ji Young Kim

发明人： Kwang Bum Kim ,  Hyun Kyung Kim ,  Ji Young Kim

IPC分类号： H01M4/485 ,  H01M4/52 ,  H01M4/04 ,  H01M4/48 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： H01M4/485 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  H01M4/366 ,  H01M4/525 ,  H01M4/587 ,  H01M4/625 ,  H01M10/052 ,  Y02P70/54

摘要： Provided is a method of preparing a complex of a transition metal oxide and carbon nanotube. The method includes (a) dispersing carbon nanotube powder in a solvent, (b) mixing the dispersion with a transition metal salt, and (c) synthesizing a complex of transition metal oxide and carbon nanotube by applying microwave to the mixed solution. The method may considerably reduce the time required to synthesize the complex. In the complex of transition metal oxide and carbon nanotube prepared by the method, the transition metal oxide may be stacked on the surface of the carbon nanotube in the size of a nanoparticle, and may enhance charge/discharge characteristics when being applied to a lithium secondary battery as an anode material.

摘要翻译： 提供了制备过渡金属氧化物和碳纳米管的络合物的方法。 该方法包括（a）将碳纳米管粉末分散在溶剂中，（b）将分散体与过渡金属盐混合，（c）通过向混合溶液中施加微波合成过渡金属氧化物和碳纳米管的络合物。 该方法可以大大减少合成复合物所需的时间。 在通过该方法制备的过渡金属氧化物和碳纳米管的复合物中，过渡金属氧化物可以以纳米颗粒的尺寸堆叠在碳纳米管的表面上，并且可以在施加到锂二次体时增强充电/放电特性 电池作为阳极材料。

公开(公告)号：US09640796B2

公开(公告)日：2017-05-02

申请号：US13635872

申请日：2011-04-20

申请人： Kwang Bum Kim ,  Hyun Kyung Kim ,  Ji Young Kim

发明人： Kwang Bum Kim ,  Hyun Kyung Kim ,  Ji Young Kim

IPC分类号： C01B31/02 ,  H01B1/04 ,  H01M4/485 ,  B82Y30/00 ,  B82Y40/00 ,  H01M4/36 ,  H01M4/62 ,  H01M4/525 ,  H01M4/587 ,  H01M10/052

CPC分类号： H01M4/485 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  H01M4/366 ,  H01M4/525 ,  H01M4/587 ,  H01M4/625 ,  H01M10/052 ,  Y02P70/54

摘要： Provided is a method of preparing a complex of a transition metal oxide and carbon nanotube. The method includes (a) dispersing carbon nanotube powder in a solvent, (b) mixing the dispersion with a transition metal salt, and (c) synthesizing a complex of transition metal oxide and carbon nanotube by applying microwave to the mixed solution. The method may considerably reduce the time required to synthesize the complex. In the complex of transition metal oxide and carbon nanotube prepared by the method, the transition metal oxide may be stacked on the surface of the carbon nanotube in the size of a nanoparticle, and may enhance charge/discharge characteristics when being applied to a lithium secondary battery as an anode material.

公开(公告)号：US08258539B2

公开(公告)日：2012-09-04

申请号：US12838031

申请日：2010-07-16

申请人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US07692201B2

公开(公告)日：2010-04-06

申请号：US11098802

申请日：2005-04-05

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

公开(公告)号：US07294864B2

公开(公告)日：2007-11-13

申请号：US10925934

申请日：2004-08-26

申请人： Dong Joon Kim ,  Hyun Kyung Kim

发明人： Dong Joon Kim ,  Hyun Kyung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44

摘要： A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.

摘要翻译： 倒装芯片型氮化物半导体发光二极管包括用于生长氮化物单晶的透光基板; 形成在所述透光性基板上的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在所述p型氮化物半导体层上并且具有其中露出所述p型氮化物半导体层的多个开放区域的网状结构的网状电介质层; 形成在网状介电层上的高反射欧姆接触层和露出p型氮化物半导体层的开放区域; 以及分别形成在高反射欧姆接触层和n型氮化物半导体层上的p型接合电极和n电极。

公开(公告)号：US09122304B2

公开(公告)日：2015-09-01

申请号：US13039821

申请日：2011-03-03

申请人： Hyun Kyung Kim

发明人： Hyun Kyung Kim

IPC分类号： G06F3/00

CPC分类号： G06F3/002 ,  G06F3/0484 ,  G06F3/0487

摘要： A method for providing a function of a portable terminal is provided. The method includes activating a color sensor upon execution of an application, displaying a color recognized by the color sensor on screen data corresponding to the executed application, and controlling a function based on a color recognized by the executed application.

摘要翻译： 提供一种用于提供便携式终端的功能的方法。 该方法包括在执行应用程序时激活颜色传感器，在与所执行的应用程序相对应的屏幕数据上显示由颜色传感器识别的颜色，以及基于所执行的应用程序识别的颜色来控制功能。

公开(公告)号：US08057084B2

公开(公告)日：2011-11-15

申请号：US12397893

申请日：2009-03-04

申请人： Ho Young Song ,  Won Soo Ji ,  Won Ho Jung ,  Young Jin Cho ,  Hyun Kyung Kim

发明人： Ho Young Song ,  Won Soo Ji ,  Won Ho Jung ,  Young Jin Cho ,  Hyun Kyung Kim

IPC分类号： F21V17/00

CPC分类号： H01L33/486 ,  G02B6/0023 ,  G02B6/0046 ,  G02B6/0068 ,  G02B6/0073 ,  G02B6/0083 ,  G02B6/0091 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A side-view type light emitting device includes a package body, first and second lead frames, a light emitting diode chip, a resin covering portion, and at least one spacer portion. The package body has a first surface provided as a mounting surface, a second surface located opposite to the first surface, side surfaces located between the first surface and the second surface, and a concave portion formed at one of the side surfaces corresponding to the light emitting surface.

摘要翻译： 侧视型发光器件包括封装体，第一引线框架和第二引线框架，发光二极管芯片，树脂覆盖部分和至少一个间隔件部分。 包装体具有设置为安装表面的第一表面，与第一表面相对的第二表面，位于第一表面和第二表面之间的侧表面，以及形成在与光对应的一个侧表面处的凹部 发射面。

公开(公告)号：US20100085772A1

公开(公告)日：2010-04-08

申请号：US12397893

申请日：2009-03-04

申请人： Ho Young Song ,  Won Soo Ji ,  Won Ho Jung ,  Young Jin Cho ,  Hyun Kyung Kim

发明人： Ho Young Song ,  Won Soo Ji ,  Won Ho Jung ,  Young Jin Cho ,  Hyun Kyung Kim

IPC分类号： H01L33/00 ,  F21V8/00

CPC分类号： H01L33/486 ,  G02B6/0023 ,  G02B6/0046 ,  G02B6/0068 ,  G02B6/0073 ,  G02B6/0083 ,  G02B6/0091 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A side-view type light emitting device includes a package body, first and second lead frames, a light emitting diode chip, a resin covering portion, and at least one spacer portion. The package body has a first surface provided as a mounting surface, a second surface located opposite to the first surface, side surfaces located between the first surface and the second surface, and a concave portion formed at one of the side surfaces corresponding to the light emitting surface. The first and second lead frames are formed at the package body to be exposed to the bottom of the concave portion. The light emitting diode chip is mounted on the bottom of the concave portion to be electrically connected to each of the first and second lead frames. The resin covering portion is formed in the concave portion to enclose the light emitting diode chip. The spacer portion is formed at the side surface around the concave portion to maintain a constant distance from a light irradiation target without reducing the view angle of light emitted from the light emitting diode chip in the major-axis direction of the concave portion.

摘要翻译： 侧视型发光器件包括封装体，第一引线框架和第二引线框架，发光二极管芯片，树脂覆盖部分和至少一个间隔件部分。 包装体具有设置为安装表面的第一表面，与第一表面相对的第二表面，位于第一表面和第二表面之间的侧表面，以及形成在与光对应的一个侧表面处的凹部 发射面。 第一引线框架和第二引线框架形成在封装主体处以暴露于凹部的底部。 发光二极管芯片安装在凹部的底部，以电连接到第一引线框架和第二引线框架中的每一个。 树脂覆盖部分形成在凹部中以包围发光二极管芯片。 间隔部分形成在凹部周围的侧表面，以保持与光照射目标的距离恒定，而不会减小从凹部的长轴方向从发光二极管芯片发出的光的视角。

公开(公告)号：US07648849B2

公开(公告)日：2010-01-19

申请号：US11933950

申请日：2007-11-01

申请人： Jae Hoon Lee ,  In Eung Kim ,  Yong Chun Kim ,  Hyun Kyung Kim ,  Moon Heon Kong

发明人： Jae Hoon Lee ,  In Eung Kim ,  Yong Chun Kim ,  Hyun Kyung Kim ,  Moon Heon Kong

IPC分类号： H01L21/00

CPC分类号： H01L33/387 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46

摘要： A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

摘要翻译： 倒装芯片型氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。 网状DBR反射层具有多个开放区域。 网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。 第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。 在网状DBR反射层和p-型氮化物半导体层上形成欧姆接触层。

公开(公告)号：US07173288B2

公开(公告)日：2007-02-06

申请号：US11053906

申请日：2005-02-10

申请人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

发明人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

IPC分类号： H01L29/22

CPC分类号： H01L27/15 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.

摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。