公开(公告)号：US20130094294A1

公开(公告)日：2013-04-18

申请号：US13648290

申请日：2012-10-10

申请人： DongHun KWAK ,  Sang-Won PARK ,  Won-Taeck JUNG

发明人： DongHun KWAK ,  Sang-Won PARK ,  Won-Taeck JUNG

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

摘要： Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.

公开(公告)号：US20130007353A1

公开(公告)日：2013-01-03

申请号：US13607038

申请日：2012-09-07

申请人： Sunil SHIM ,  Jinman HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

发明人： Sunil SHIM ,  Jinman HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

IPC分类号： G06F12/02

CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

公开(公告)号：US20150078087A1

公开(公告)日：2015-03-19

申请号：US14546477

申请日：2014-11-18

申请人： Sunil SHIM ,  Jin-Man HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

发明人： Sunil SHIM ,  Jin-Man HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

IPC分类号： G11C16/34 ,  G11C16/14

CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

摘要翻译： 根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除， 每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。 控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。