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    CONTROL METHOD OF NONVOLATILE MEMORY DEVICE
    1.
    发明申请
    CONTROL METHOD OF NONVOLATILE MEMORY DEVICE 有权

    公开(公告)号：US20130007353A1

    公开(公告)日：2013-01-03

    申请号：US13607038

    申请日：2012-09-07

    申请人： Sunil SHIM ,  Jinman HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

    发明人： Sunil SHIM ,  Jinman HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

    IPC分类号： G06F12/02

    CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

    摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

    CONTROL METHOD OF NONVOLATILE MEMORY DEVICE
    2.
    发明申请
    CONTROL METHOD OF NONVOLATILE MEMORY DEVICE 审中-公开
    非易失性存储器件的控制方法

    公开(公告)号：US20150078087A1

    公开(公告)日：2015-03-19

    申请号：US14546477

    申请日：2014-11-18

    申请人： Sunil SHIM ,  Jin-Man HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

    发明人： Sunil SHIM ,  Jin-Man HAN ,  Sang-Wan NAM ,  Won-Taeck JUNG

    IPC分类号： G11C16/34 ,  G11C16/14

    CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/349 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

    摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

    摘要翻译： 根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除， 每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。 控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。

    METHODS OF OPERATING A NONVOLATILE MEMORY DEVICE
    4.
    发明申请
    METHODS OF OPERATING A NONVOLATILE MEMORY DEVICE 有权
    操作非易失性存储器件的方法

    公开(公告)号：US20160111165A1

    公开(公告)日：2016-04-21

    申请号：US14859637

    申请日：2015-09-21

    申请人： Sunil SHIM ,  Joon-sung LIM ,  Jin-Kyu KANG ,  Euido KIM ,  Jang-Gn YUN

    发明人： Sunil SHIM ,  Joon-sung LIM ,  Jin-Kyu KANG ,  Euido KIM ,  Jang-Gn YUN

    IPC分类号： G11C16/16 ,  G11C16/34

    CPC分类号： G11C16/16 ,  G11C11/5635 ,  G11C16/3445

    摘要： An operating method of a nonvolatile memory device is provided which sequentially performs a plurality of erase loops to erase at least one of a plurality of memory blocks. The operating method comprises performing at least one of the plurality of erase loops; performing a post-program operation on the at least one memory block after the at least one erase loop is executed; and performing remaining erase loops of the plurality of erase loops. The post-program operation is not performed when each of the remaining erase loops is executed.

    摘要翻译： 提供一种非易失性存储装置的操作方法，其顺序地执行多个擦除循环以擦除多个存储块中的至少一个。 所述操作方法包括执行所述多个擦除环中的至少一个; 在执行所述至少一个擦除循环之后对所述至少一个存储器块执行后编程操作; 以及执行所述多个擦除环路的剩余擦除环路。 当执行每个剩余擦除循环时，不执行后编程操作。

    OPERATING METHODS OF NONVOLATILE MEMORY DEVICES
    7.
    发明申请
    OPERATING METHODS OF NONVOLATILE MEMORY DEVICES 审中-公开
    非易失性存储器件的操作方法

    公开(公告)号：US20150348636A1

    公开(公告)日：2015-12-03

    申请号：US14820703

    申请日：2015-08-07

    申请人： Byeong-in Choe ,  Jaehoon JANG ,  Kihyun KIM ,  Sunil SHIM ,  Woonkyung Lee

    发明人： Byeong-in Choe ,  Jaehoon JANG ,  Kihyun KIM ,  Sunil SHIM ,  Woonkyung Lee

    IPC分类号： G11C16/14 ,  G11C16/04

    CPC分类号： G11C16/14 ,  G11C7/14 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  G11C16/30 ,  H01L27/11582 ,  H01L29/7926

    摘要： Disclosed are methods of operating a nonvolatile memory device which includes a substrate and a plurality of cell strings provided on the substrate, each cell string including a plurality of memory cells stacked in a direction perpendicular to the substrate. The methods may include applying a word line erase voltage to word lines connected to memory cells of the cell strings; floating ground selection lines connected to ground selection transistors of the cell strings and string selection lines connected to string selection transistors of the plurality of cell strings; applying a ground voltage to at least one lower dummy word line connected to at least one lower dummy memory cell between memory cells and a ground selection transistor in each of the plurality of cell strings; applying an erase voltage to the substrate; and floating the at least one lower dummy word line after applying of the erase voltage.

    摘要翻译： 公开了一种非易失性存储器件的操作方法，其包括衬底和设置在衬底上的多个单元串，每个单元串包括沿垂直于衬底的方向堆叠的多个存储单元。 所述方法可以包括将字线擦除电压施加到连接到所述单元串的存储单元的字线; 连接到单元串的地选择晶体管的浮动接地选择线和连接到多个单元串的串选择晶体管的串选择线; 将至少一个连接到所述多个单元串中的每一个的存储单元之间的至少一个下部虚设存储单元和所述多个单元串中的接地选择晶体管的下虚拟字线施加接地电压; 向基板施加擦除电压; 并且在施加擦除电压之后浮置所述至少一个下部虚拟字线。