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公开(公告)号：US20120038028A1
公开(公告)日：2012-02-16
申请号：US12938272
申请日：2010-11-02
申请人： Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shu-Ting Tsai
发明人： Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shu-Ting Tsai
CPC分类号： H01L21/78 , H01L23/3157 , H01L23/585 , H01L2924/0002 , H01L2924/14 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.
摘要翻译： 本公开提供一种制造半导体器件的方法，所述方法包括提供具有密封环区域和电路区域的衬底，在所述密封环区域上形成第一密封环结构，在所述密封环上形成第二密封环结构 并且邻近第一密封环结构，以及形成设置在第一和第二密封环结构上的第一钝化层。 还提供了通过这种方法制造的半导体器件。
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公开(公告)号：US08338917B2
公开(公告)日：2012-12-25
申请号：US12938272
申请日：2010-11-02
申请人： Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shu-Ting Tsai
发明人： Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shu-Ting Tsai
CPC分类号： H01L21/78 , H01L23/3157 , H01L23/585 , H01L2924/0002 , H01L2924/14 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.
摘要翻译： 本公开提供一种制造半导体器件的方法，所述方法包括提供具有密封环区域和电路区域的衬底，在所述密封环区域上形成第一密封环结构，在所述密封环上形成第二密封环结构 并且邻近第一密封环结构，以及形成设置在第一和第二密封环结构上的第一钝化层。 还提供了通过这种方法制造的半导体器件。
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公开(公告)号：US08283754B2
公开(公告)日：2012-10-09
申请号：US12916789
申请日：2010-11-01
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
IPC分类号： H01L23/544
CPC分类号： H01L23/585 , H01L21/02697 , H01L21/30604 , H01L21/31 , H01L21/31111 , H01L21/32051 , H01L21/6835 , H01L21/76 , H01L21/76816 , H01L21/76877 , H01L23/3171 , H01L23/3192 , H01L23/488 , H01L23/5226 , H01L23/528 , H01L23/562 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L27/14618 , H01L27/14636 , H01L27/1464 , H01L2221/68304 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2224/02166 , H01L2224/03 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/0361 , H01L2224/0362 , H01L2224/05025 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05684 , H01L2224/0603 , H01L2224/06181 , H01L2924/01019 , H01L2924/01068 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.
摘要翻译： 一种方法包括提供具有密封环区域和电路区域的衬底，在密封环区域上形成密封环结构，在密封环结构上方形成第一前侧钝化层，在相邻的第一侧面钝化层中蚀刻前侧孔 到密封环结构的外部部分，在前侧孔中形成前侧金属垫，以将前侧金属垫连接到密封环结构的外部部分，在密封环结构下方形成第一背侧钝化层，蚀刻背面 邻近密封环结构的外部部分的第一背面钝化层中的孔，以及在背侧孔中形成背面金属垫，以将背面金属垫耦合到密封环结构的外部。 还提供了通过这种方法制造的半导体器件。
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公开(公告)号：US20120038020A1
公开(公告)日：2012-02-16
申请号：US12916789
申请日：2010-11-01
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
IPC分类号： H01L23/528 , H01L21/768
CPC分类号： H01L23/585 , H01L21/02697 , H01L21/30604 , H01L21/31 , H01L21/31111 , H01L21/32051 , H01L21/6835 , H01L21/76 , H01L21/76816 , H01L21/76877 , H01L23/3171 , H01L23/3192 , H01L23/488 , H01L23/5226 , H01L23/528 , H01L23/562 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L27/14618 , H01L27/14636 , H01L27/1464 , H01L2221/68304 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2224/02166 , H01L2224/03 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/0361 , H01L2224/0362 , H01L2224/05025 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05684 , H01L2224/0603 , H01L2224/06181 , H01L2924/01019 , H01L2924/01068 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.
摘要翻译： 一种方法包括提供具有密封环区域和电路区域的衬底，在密封环区域上形成密封环结构，在密封环结构上方形成第一前侧钝化层，在相邻的第一侧面钝化层中蚀刻前侧孔 到密封环结构的外部部分，在前侧孔中形成前侧金属垫，以将前侧金属垫连接到密封环结构的外部部分，在密封环结构下方形成第一背侧钝化层，蚀刻背面 邻近密封环结构的外部部分的第一背面钝化层中的孔，以及在背侧孔中形成背面金属垫，以将背面金属垫耦合到密封环结构的外部。 还提供了通过这种方法制造的半导体器件。
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