公开(公告)号：US20210237224A1

公开(公告)日：2021-08-05

申请号：US17147677

申请日：2021-01-13

Applicant: EBARA CORPORATION

Inventor： Itsuki Kobata ,  Hozumi Yasuda ,  Akio Yanai ,  Nobuyuki Takahashi ,  Takamasa Nakamura ,  Keisuke Sakata ,  Nobuyuki Takada ,  Yuji Yagi ,  Yasuhiro Takada ,  Katsuhide Watanabe

IPC: B24B37/10 ,  B24B37/005

Abstract: A polishing head system capable of precisely controlling a film-thickness profile of a workpiece, such as a wafer, substrate, or panel, is disclosed. The polishing head system includes a polishing head having a plurality of piezoelectric elements configured to apply pressing forces to a workpiece, and an operation controller configured to determine instruction values of voltages to be applied to the plurality of piezoelectric elements.

公开(公告)号：US12211733B2

公开(公告)日：2025-01-28

申请号：US17759932

申请日：2021-01-13

Applicant: EBARA CORPORATION

Inventor： Nobuyuki Takada ,  Hozumi Yasuda

IPC: H01L21/687 ,  B24B37/005 ,  B24B37/10 ,  B24B41/06 ,  B24B49/02 ,  H01L21/304 ,  H01L21/67 ,  H01L21/68

Abstract: A substrate processing apparatus includes a table, a pad holder, an elevating mechanism, and at least three centering mechanisms. The table is for supporting a substrate. The pad holder is for holding a polishing pad for polishing the substrate supported by the table. The elevating mechanism is for elevating the pad holder with respect to the substrate. The at least three centering mechanisms are for pushing the substrate supported by the table in a center direction of the table to position the substrate. The at least three centering mechanisms each include a rotation shaft arranged in a peripheral area of the table and a centering member mounted to the rotation shaft.

公开(公告)号：US11911872B2

公开(公告)日：2024-02-27

申请号：US17166521

申请日：2021-02-03

Applicant: Ebara Corporation

Inventor： Nobuyuki Takada ,  Hozumi Yasuda

IPC: B24B9/06 ,  B24B37/30 ,  B24B49/04 ,  B24B49/10 ,  B24B37/04 ,  B24B49/12

CPC classification number: B24B9/065 ,  B24B37/042 ,  B24B37/30 ,  B24B49/04 ,  B24B49/10 ,  B24B49/12

Abstract: Polishing uniformity of a surface to be polished of a substrate is improved by appropriately according with a state of the surface to be polished during polishing. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, an elevating mechanism for elevating the pad holder 226 with respect to the substrate WF, a swing mechanism for swinging the pad holder 226 in a radial direction of the substrate WF, supporting members 300A and 300B for supporting the polishing pad 222 swung to outside the table 100 by the swing mechanism, and driving mechanisms 310 and 320 for adjusting at least one of a height and a distance to the substrate WF of the supporting member 300 while polishing the substrate WF.

公开(公告)号：US11735457B2

公开(公告)日：2023-08-22

申请号：US17126447

申请日：2020-12-18

Applicant: Ebara Corporation

Inventor： Nobuyuki Takada ,  Hozumi Yasuda

IPC: H01L21/68 ,  B24B37/20 ,  H01L21/306 ,  H01L21/66

CPC classification number: H01L21/681 ,  B24B37/20 ,  H01L21/30625 ,  H01L22/10

Abstract: To improve uniformity in polishing of a polished surface of a substrate regardless of a tolerance of a diameter of the substrate. A substrate processing apparatus includes a table 100, a pad holder 226, a swing mechanism, a supporting member 300A, 300B, a measuring instrument 400, and a driving mechanism 320. The table 100 supports a substrate WF. The pad holder 226 holds a polishing pad 222. The polishing pad 222 polishes the substrate WF supported to the table 100. The swing mechanism swings the pad holder 226. The supporting member 300A, 300B supports the polishing pad 222 swung to outside the table 100 by the swing mechanism. The measuring instrument 400 is configured to measure a diameter of the substrate WF. The driving mechanism 320 adjusts a position of the supporting member 300A, 300B with respect to the substrate WF supported to the table 100 according to the diameter of the substrate WF measured by the measuring instrument 400.

公开(公告)号：US12017323B2

公开(公告)日：2024-06-25

申请号：US17147677

申请日：2021-01-13

Applicant: EBARA CORPORATION

Inventor： Itsuki Kobata ,  Hozumi Yasuda ,  Akio Yanai ,  Nobuyuki Takahashi ,  Takamasa Nakamura ,  Keisuke Sakata ,  Nobuyuki Takada ,  Yuji Yagi ,  Yasuhiro Takada ,  Katsuhide Watanabe

IPC: B24B37/10 ,  B24B37/005

CPC classification number: B24B37/10 ,  B24B37/005

Abstract: A polishing head system capable of precisely controlling a film-thickness profile of a workpiece, such as a wafer, substrate, or panel, is disclosed. The polishing head system includes a polishing head having a plurality of piezoelectric elements configured to apply pressing forces to a workpiece, and an operation controller configured to determine instruction values of voltages to be applied to the plurality of piezoelectric elements.

公开(公告)号：US11633828B2

公开(公告)日：2023-04-25

申请号：US16797316

申请日：2020-02-21

Applicant: EBARA CORPORATION

Inventor： Yuta Suzuki ,  Taro Takahashi ,  Akihiko Ogawa ,  Shigeyuki Furuya ,  Yuji Yagi ,  Nobuyuki Takada ,  Shinpei Tokunaga

IPC: B24B37/013 ,  B24B21/04

Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

公开(公告)号：US20200269380A1

公开(公告)日：2020-08-27

申请号：US16797316

申请日：2020-02-21

Applicant: EBARA CORPORATION

Inventor： Yuta Suzuki ,  Taro Takahashi ,  Akihiko Ogawa ,  Shigeyuki Furuya ,  Yuji Yagi ,  Nobuyuki Takada ,  Shinpei Tokunaga

IPC: B24B37/013 ,  B24B21/04

Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.