公开(公告)号：US12085968B2

公开(公告)日：2024-09-10

申请号：US17716889

申请日：2022-04-08

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Kwang Hyo Chung ,  Chang Geun Ahn ,  Do Hyun Kim ,  Seung Hwan Kim ,  Hyung Wook Noh ,  Hwin Dol Park ,  Yong Won Jang ,  Jae Hun Choi

IPC: G05D7/06 ,  F16L41/00 ,  F16L41/03

CPC classification number: G05D7/0664 ,  F16L41/008 ,  F16L41/03

Abstract: Provided is a multi-port gas flow rate control apparatus. The multi-port gas flow rate control apparatus includes a gas supply chamber configured to supply a measurement gas input through one gas inflow channel while allowing the measurement gas to diverge into a plurality of flows, a plurality of gas divergence flow channels each having one side connected to the gas supply chamber and configured to transfer the measurement gas flowing through the gas supply chamber to a plurality of gas sensors, respectively, and a gas measurement chamber configured to accommodate the plurality of gas sensors, including the plurality of gas divergence flow channels configured to connect to the gas supply chamber to the plurality of gas sensors to transfer a gas outflow diverging through the gas supply chamber to the plurality of accommodated gas sensors, and configured to discharge the gas outflow sensed by the plurality of gas sensors.

公开(公告)号：US09650238B2

公开(公告)日：2017-05-16

申请号：US14475487

申请日：2014-09-02

Applicant: Electronics and Telecommunications Research Institute

Inventor： In Bok Baek ,  Han Young Yu ,  Yark Yeon Kim ,  Young Jun Kim ,  Chang Geun Ahn ,  Yong Sun Yoon ,  Bong Kuk Lee ,  Ji Eun Lim ,  Won Ick Jang

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/08 ,  H03H9/24 ,  H02N11/00

CPC classification number: B81B7/02 ,  B81B7/0006 ,  B81B7/0093 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0307 ,  B81C1/00142 ,  B81C1/0019 ,  B81C1/0038 ,  B81C1/00539 ,  H02N11/002 ,  H03H3/0072 ,  H03H9/08 ,  H03H9/2463

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

公开(公告)号：US09640736B2

公开(公告)日：2017-05-02

申请号：US15013803

申请日：2016-02-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Chul Huh ,  Bong Kyu Kim ,  Chang Geun Ahn

IPC: H01L29/06 ,  H01L21/00 ,  H01L33/50 ,  H01L33/26

CPC classification number: H01L33/502 ,  H01L33/26

Abstract: Disclosed is a silicon nano crystal light emitting diode, including: a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film.