公开(公告)号：US20250020282A1

公开(公告)日：2025-01-16

申请号：US18767649

申请日：2024-07-09

Applicant: ENTEGRIS, INC.

Inventor： Scott L. Battle ,  Benjamin R. Garrett ,  Bryan Hendrix ,  Michael Watson ,  Sara Moghaddam ,  Yusuke Tamaki

IPC: F17C9/02

Abstract: Diffuser plates in vaporizers, and related systems and methods, are provided. A vaporizer comprises a vessel having an outlet. The vessel contains or is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The vessel discharges or is configured to discharge the precursor vapor through the outlet. The vaporizer includes a diffuser located within the vessel, between the vaporizable precursor and the outlet. The diffuser has a first surface, a second surface opposite the first surface, and a plurality of holes extending from the first surface of the diffuser through to the second surface of the diffuser.

公开(公告)号：US09783558B2

公开(公告)日：2017-10-10

申请号：US14798775

申请日：2015-07-14

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

公开(公告)号：US20240116774A1

公开(公告)日：2024-04-11

申请号：US18376476

申请日：2023-10-04

Applicant: ENTEGRIS, INC.

Inventor： Loren Press ,  Benjamin Garrett ,  Michael Watson ,  Scott L. Battle ,  Thomas M. Cameron ,  Bryan Hendrix

IPC: C01G41/04

CPC classification number: C01G41/04

Abstract: A precursor comprises a tungsten precursor and a carbon-containing material. The precursor comprises less than 0.02% by weight of the carbon-containing material based on a total weight of the precursor. A method for purifying a tungsten precursor may comprise at least one of the following steps: obtaining a source vessel containing a tungsten precursor and a carbon-containing material; separating the tungsten precursor from at least a first portion of the carbon-containing material; recovering a precursor in a collection vessel; or any combination thereof.

公开(公告)号：US11107675B2

公开(公告)日：2021-08-31

申请号：US15963656

申请日：2018-04-26

Applicant: Entegris, Inc.

Inventor： Thomas H. Baum ,  Philip S. H. Chen ,  Robert L. Wright ,  Bryan Hendrix ,  Shuang Meng ,  Richard Assion

IPC: H01L21/02 ,  C23C16/06 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  H01L23/532

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

公开(公告)号：US20150315215A1

公开(公告)日：2015-11-05

申请号：US14798775

申请日：2015-07-14

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

Abstract translation: 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

公开(公告)号：US20140329011A1

公开(公告)日：2014-11-06

申请号：US14333536

申请日：2014-07-17

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

Abstract translation: 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

公开(公告)号：US20230130079A1

公开(公告)日：2023-04-27

申请号：US17972242

申请日：2022-10-24

Applicant: ENTEGRIS, INC.

Inventor： Scott L. Battle ,  John N. Gregg ,  Donn K. Naito ,  Bryan Hendrix

IPC: C23C16/448 ,  C23C16/52

Abstract: A system includes a vaporizer vessel. The vaporizer vessel includes an outlet fluidly connected to the vaporizer vessel. A heater is configured to heat the vaporizer vessel. A valve is configured to regulate a pressure of a vaporized material at the outlet. In response to the pressure at the outlet being outside a set pressure range, the heater is configured to increase or decrease heat to the vaporizer vessel.

公开(公告)号：US20180019165A1

公开(公告)日：2018-01-18

申请号：US15649248

申请日：2017-07-13

Applicant: Entegris, Inc.

Inventor： Thomas H. Baum ,  Philip S.H. Chen ,  Robert Wright ,  Bryan Hendrix ,  Shuang Meng ,  Richard Assion

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/06

CPC classification number: H01L21/76876 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/06 ,  C23C16/14 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

公开(公告)号：US09102693B2

公开(公告)日：2015-08-11

申请号：US14333536

申请日：2014-07-17

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

公开(公告)号：US20240123391A1

公开(公告)日：2024-04-18

申请号：US18376471

申请日：2023-10-04

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, JR. ,  Bryan Hendrix ,  Loren Press ,  Benjamin Garrett

IPC: B01D53/00 ,  C01G41/04

CPC classification number: B01D53/002 ,  C01G41/04

Abstract: Tungsten precursors with high purity and methods for purifying tungsten precursors are provided. The method for purifying a precursor may comprise at least one of the following steps: obtaining a source vessel containing WCl4, WOCl4, and one of WCl5 or WCl6; separating the WCl5 or the WCl6 from at least a first portion of the WOCl4; separating the WCl5 or the WCl6 from at least a second portion of the WOCl4; recovering a precursor in a collection vessel; or any combination thereof.