公开(公告)号：US20170103888A1

公开(公告)日：2017-04-13

申请号：US15292760

申请日：2016-10-13

Applicant: Entegris, Inc.

Inventor： Dingkai Guo ,  Bryan C. Hendrix ,  Yuqi Li ,  Susan V. DiMeo ,  Weimin Li ,  William Hunks

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02211 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/45534 ,  H01L21/02164 ,  H01L21/0228

Abstract: A precursor composition is described, useful for low temperature (

公开(公告)号：US09443736B2

公开(公告)日：2016-09-13

申请号：US14400793

申请日：2013-05-22

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  Susan V. DiMeo ,  Bryan C. Hendrix ,  Weimin Li

IPC: H01L21/00 ,  H01L21/28 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C09D5/24 ,  C23C16/44 ,  C23C16/455 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L21/28229 ,  C07F7/10 ,  C09D5/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45525 ,  H01L28/40 ,  H01L29/516

Abstract: A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO2, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.