公开(公告)号：US20160049918A1

公开(公告)日：2016-02-18

申请号：US14784351

申请日：2013-05-24

Applicant: EPCOS AG

Inventor： Gilles Moulard

IPC: H03H9/02 ,  B81C1/00 ,  B81B7/00

CPC classification number: H03H9/02244 ,  B81B7/0038 ,  B81C1/00285 ,  H01L2224/16225 ,  H01L2924/15174

Abstract: A microelectromechanical systems device package includes a MEMS device mounted in flip-chip technology on a substrate. A film of non-evaporable getter material is disposed between the substrate and the MEMS device. A cover structure encapsulates the MEMS device. This invention further provides a method for manufacturing the microelectromechanical systems device package.

Abstract translation: 微机电系统器件封装包括以衬底上的倒装芯片技术安装的MEMS器件。 非可蒸发吸气材料的薄膜设置在基板和MEMS装置之间。 封装结构封装了MEMS器件。 本发明还提供一种用于制造微机电系统器件封装的方法。

公开(公告)号：US20150333248A1

公开(公告)日：2015-11-19

申请号：US14653768

申请日：2012-12-21

Applicant: EPCOS AG

Inventor： Gilles Moulard

IPC: H03H9/70 ,  H03H9/205 ,  H01L41/27 ,  H01L41/083 ,  H01L41/18

CPC classification number: H03H9/706 ,  H01H1/0036 ,  H01H57/00 ,  H01H2057/006 ,  H01L41/083 ,  H01L41/18 ,  H01L41/27 ,  H01P5/12 ,  H03H3/04 ,  H03H9/02015 ,  H03H9/171 ,  H03H9/205 ,  H03H9/58 ,  H03H2003/0435 ,  H03H2003/0471 ,  Y10T29/43 ,  Y10T29/49005

Abstract: A BAW component, a lamination for a BAW component, and a method for manufacturing a BAW component are provided. A lamination for a BAW component includes a first layer with a first piezoelectric material and a second layer with a second piezoelectric material that is different than the first piezoelectric material. The first and the second piezoelectric material can be Sc doped AlN and AlN, respectively.

Abstract translation: 提供BAW部件，BAW部件的层压体以及BAW部件的制造方法。 用于BAW部件的层压包括具有第一压电材料的第一层和具有与第一压电材料不同的第二压电材料的第二层。 第一和第二压电材料可分别为Sc掺杂的AlN和AlN。

公开(公告)号：US09479138B2

公开(公告)日：2016-10-25

申请号：US14784351

申请日：2013-05-24

Applicant: EPCOS AG

Inventor： Gilles Moulard

IPC: H01L29/82 ,  H03H9/02 ,  B81B7/00 ,  B81C1/00

CPC classification number: H03H9/02244 ,  B81B7/0038 ,  B81C1/00285 ,  H01L2224/16225 ,  H01L2924/15174

Abstract: A microelectromechanical systems device package includes a MEMS device mounted in flip-chip technology on a substrate. A film of non-evaporable getter material is disposed between the substrate and the MEMS device. A cover structure encapsulates the MEMS device. This invention further provides a method for manufacturing the microelectromechanical systems device package.

Abstract translation: 微机电系统器件封装包括以衬底上的倒装芯片技术安装的MEMS器件。 非可蒸发吸气材料的薄膜设置在基板和MEMS装置之间。 封装结构封装了MEMS器件。 本发明还提供一种用于制造微机电系统器件封装的方法。

公开(公告)号：US20150333727A1

公开(公告)日：2015-11-19

申请号：US14653829

申请日：2012-12-21

Applicant: EPCOS AG

Inventor： Gilles Moulard ,  Paul Muralt ,  Ramin Matloub

IPC: H03H9/02 ,  H03H3/02 ,  H01L41/187 ,  H01L41/332 ,  H01L41/29 ,  H01L41/314

CPC classification number: H03H3/04 ,  H01L41/187 ,  H01L41/29 ,  H01L41/314 ,  H01L41/332 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/589 ,  H03H2003/0435 ,  H03H2003/0471

Abstract: A MEMS component includes a lower electrode. The MEMS component also includes an upper electrode. The upper electrode overlies the lower electrode. The MEMS component also includes a first piezoelectric layer between the lower electrode and the upper electrode. The first piezoelectric layer has a first piezoelectric material comprising AlN and Sc.

Abstract translation: MEMS部件包括下电极。 MEMS组件还包括上电极。 上电极覆盖下电极。 MEMS部件还包括在下电极和上电极之间的第一压电层。 第一压电层具有包含AlN和Sc的第一压电材料。

公开(公告)号：US20150333249A1

公开(公告)日：2015-11-19

申请号：US14654480

申请日：2012-12-21

Applicant: EPCOS AG

Inventor： Gilles Moulard ,  Paul Muralt ,  Ramin Matloub ,  Thomas Metzger

IPC: H01L41/083 ,  H01L41/27 ,  H01L41/18

CPC classification number: H01L41/083 ,  H01L41/18 ,  H01L41/27 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/0576 ,  H03H9/171 ,  Y10T29/43

Abstract: A BAW component is provided. A method for manufacturing a BAW component is also provided. The component includes a bottom electrode, a top electrode and a first piezoelectric material. The first piezoelectric material is between the bottom electrode and the top electrode. The first piezoelectric material has a higher piezoelectric coefficient than AlN.

Abstract translation: 提供BAW组件。 还提供了一种制造BAW部件的方法。 该部件包括底部电极，顶部电极和第一压电材料。 第一压电材料位于底部电极和顶部电极之间。 第一压电材料具有比AlN更高的压电系数。