公开(公告)号：US10008636B2

公开(公告)日：2018-06-26

申请号：US15796241

申请日：2017-10-27

申请人： EPISTAR CORPORATION

发明人： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC分类号： H01L33/46 ,  H01L33/60 ,  H01L25/075

CPC分类号： H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

摘要： A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

公开(公告)号：US10367118B2

公开(公告)日：2019-07-30

申请号：US15266249

申请日：2016-09-15

申请人： EPISTAR CORPORATION

发明人： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/42 ,  H01L33/38 ,  H01L33/46 ,  H01L33/30

摘要： A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.

公开(公告)号：US09087967B2

公开(公告)日：2015-07-21

申请号：US13856220

申请日：2013-04-03

申请人： EPISTAR CORPORATION

发明人： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

CPC分类号： H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

摘要翻译： 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

公开(公告)号：US09859470B2

公开(公告)日：2018-01-02

申请号：US15066095

申请日：2016-03-10

申请人： EPISTAR CORPORATION

发明人： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC分类号： H01L33/46 ,  H01L33/60 ,  H01L25/075

CPC分类号： H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

摘要： A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt.

公开(公告)号：US20170005227A1

公开(公告)日：2017-01-05

申请号：US15266249

申请日：2016-09-15

申请人： EPISTAR CORPORATION

发明人： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC分类号： H01L33/10 ,  H01L33/38 ,  H01L33/46

CPC分类号： H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

摘要： A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.

摘要翻译： 发光二极管包括用于发射光线的有源层; 在所述有源层上的上半导体堆叠，其中所述上半导体堆叠包括窗口层; 反射器 以及在所述有源层和所述反射器之间的下半导体堆叠; 其中所述窗口层的厚度小于或等于3μm，并且所述下半导体叠层的厚度小于或等于1μm。

公开(公告)号：US10600938B2

公开(公告)日：2020-03-24

申请号：US15983964

申请日：2018-05-18

申请人： EPISTAR CORPORATION

发明人： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC分类号： H01L33/10 ,  H01L33/04 ,  H01L33/46 ,  H01L33/60 ,  H01L25/075

摘要： A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

公开(公告)号：US09825088B2

公开(公告)日：2017-11-21

申请号：US14808295

申请日：2015-07-24

申请人： EPISTAR CORPORATION

发明人： Shao-Ping Lu ,  Yi-Ming Chen ,  Yu-Ren Peng ,  Chun-Yu Lin ,  Chun-Fu Tsai ,  Tzu-Chieh Hsu

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08

CPC分类号： H01L27/153 ,  H01L33/005 ,  H01L33/08

摘要： A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

公开(公告)号：US09472719B2

公开(公告)日：2016-10-18

申请号：US14625156

申请日：2015-02-18

申请人： EPISTAR CORPORATION

发明人： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/42

CPC分类号： H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

摘要： A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

摘要翻译： 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

公开(公告)号：US20160240731A1

公开(公告)日：2016-08-18

申请号：US14625156

申请日：2015-02-18

申请人： EPISTAR CORPORATION

发明人： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC分类号： H01L33/10 ,  H01L33/42 ,  H01L33/12

CPC分类号： H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

摘要： A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

摘要翻译： 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

公开(公告)号：US10693039B2

公开(公告)日：2020-06-23

申请号：US15602421

申请日：2017-05-23

申请人： EPISTAR CORPORATION

发明人： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC分类号： H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

摘要： A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.